SMLVT3V3 ® LOW VOLTAGE TRANSILTM FEATURES ■ ■ ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W (10/1000µs) REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION The SMLVT3V3 is a Transil diode designed specifically for protecting 3.3V supplied sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes then particularly suited to protect voltage sensitive devices surb as MOS technology and low voltage supply IC’s. SMB (JEDEC DO-214AA) ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Value Unit 600 W Peak pulse power dissipation (see note 1) Tj initial = Tamb Power dissipation on infinite heatsink Tamb = 75°C 5 W IFSM Non repetitive surge peak forward current tp = 10 ms Tj initial = Tamb 50 A Tstg Tj Storage temperature range Maximum junction temperature - 65 to + 175 175 °C °C TL Maximum lead temperature for soldering during 10 s 260 °C Value Unit PPP P Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCE Symbol Parameter Rth (j-l) Junction to leads 20 °C/W Rth (j-a) Junction to ambient on printed circuit on recommended pad layout 100 °C/W August 2001 - Ed : 2 1/4 SMLVT3V3 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter I IF VRM Stand-off voltage. VBR Breakdown voltage. VCL Clamping voltage. IRM Leakage current @ VRM. IPP Peak pulse current. αT Voltage temperature coefficient VF Forward voltage drop IRM @ VRM max VCL V RM VF V I RM I PP VBR @ IR VCL @ IPP min max Type αT C max max note 3 note 4 VCL @ IPP max 10/1000 µs note 2 SMLVT3V3 VBR 8/20 µs A V V mA V A V A 10-4/°C pF 200 3.3 4.1 1 7.3 50 10.3 200 -5.3 5200 Fig. 1 : Peak pulse power dissipation versus initial junction temperature (printed circuit board). PPP[Tj initial] PPP[Tj initial = 25°C] % IPP 100 10 µS P U L SE W AVE FO RM 1 0 /1 0 0 0 µ S 50 0 T 10 00 µ S Note 2 : Pulse test : tp < 50 ms Note 3 : ∆VBR = αT * (Tamb - 25) * VBR(25°C). Note 4 : VR = 0V , F = 1MHz. 2/4 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Tj initial (°C) 0 25 50 75 100 125 150 175 200 SMLVT3V3 Fig. 2 : Peak pulse power versus exponential pulse duration (Tj initial = 25°C). Fig. 3 : Clamping voltage versus peak pulse current (Tj initial = 25°C). Exponential waveform tp = 20 µs and tp = 1 ms. Ppp(kW) V C L (V ) 10.00 10 1.00 8 TP= 2 0 µ S TP= 1 MS 0.10 6 tp(ms) 0.01 0.01 I PP(A ) 0.10 1.00 10.00 Fig. 4 : Capacitance versus reverse applied voltage (typical values). 4 0 .1 1 .0 1 0 .0 1 0 0 .0 Fig. 5 : Peak forward voltage drop versus peak forward current (typical values). C (PF ) 5000 4000 F=1M H Z T J= 2 5 ° C 3000 2000 V R (V ) 1000 1 2 3 4 5 Fig. 6 : Transient thermal impedance junction ambient versus pulse duration. Mounting on FR4 PC Board with Recommended pad layout. Fig. 7 : Relative variation of leakage current versus junction temperature. 3/4 SMLVT3V3 ORDER CODE SM LVT 3V3 STAND-OFF-VOLTAGE SURFACE MOUNT LOW VOLTAGE TRANSIL PACKAGE MECHANICAL DATA SMB (Plastic) - Jedec DO-214AA DIMENSIONS E1 REF. D E c A1 A2 L FOOTPRINT DIMENSIONS (Millimeter) SMB Plastic. b Millimeters Inches Min. Typ. Max. Min. Typ. Max. A1 1.90 2.15 2.45 0.075 0.085 0.096 A2 0.05 0.15 0.20 0.002 0.006 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.40 5.60 0.201 0.213 0.220 E1 4.05 4.30 4.60 0.159 0.169 0.181 D 3.30 3.60 3.95 0.130 0.142 0.156 L 0.75 1.15 1.60 0.030 0.045 0.063 Marking: Logo, data code, type code and cathod band Weight = 0.12 g 2.3 Packaging : standard packaging is in tape and reel. 1.52 2.75 1.52 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4