STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT TYPE STD7NB60H ■ ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE(sat) IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. 3 1 DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) Parameter 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V 14 A IC Collector Current (continuos) at TC = 25°C IC Collector Current (continuos) at TC = 100°C 7 A Collector Current (pulsed) 56 A Total Dissipation at TC = 25°C 55 W 0.44 W/°C ICM (■) PTOT Derating Factor Tstg Tj July 2000 Storage Temperature Max. Operating Junction Temperature –65 to 150 °C 150 °C 1/9 STGD7NB60H THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C IGES Gate-Emitter Leakage Current (VCE = 0) VBR(CES) Min. Typ. Max. 600 Unit V 10 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ± 20V , VCE = 0 ±100 nA Typ. Max. Unit 5 V 2.8 V ON (1) Symbol Parameter Test Conditions Min. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 7 A 2.3 VGE = 15V, IC = 7 A, Tj =125°C 1.9 3 V DYNAMIC Symbol Parameter gfs Forward Transconductance Cies Input Capacitance Coes Test Conditions VCE = 25 V , IC =3 A Min. 3.5 Typ. Max. Unit 5 S 560 pF Output Capacitance 68 pF Cres Reverse Transfer Capacitance 15 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 15V ICL Latching Current Vclamp = 480 V , Tj = 150°C RG = 10 Ω VCE = 25V, f = 1 MHz, VGE = 0 42 7.9 17.6 55 28 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/9 Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 7 A RG = 10Ω , VGE = 15 V 15 48 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 7 A RG=10Ω VGE = 15 V,Tj = 125°C 160 70 A/µs µJ STGD7NB60H ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Vcc = 480 V, IC = 7 A, RGE = 10 Ω , VGE = 15 V Min. Typ. Max. Unit 85 ns 20 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 75 ns Fall Time 70 ns Turn-off Switching Loss 85 µJ Total Switching Loss 130 µJ 150 ns 50 ns 110 ns Fall Time 110 ns Turn-off Switching Loss 220 µJ Total Switching Loss 290 µJ tf Eoff(**) Ets tc Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets Vcc = 480 V, IC = 3 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Thermal Impedance 3/9 STGD7NB60H Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature 4/9 STGD7NB60H Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/9 STGD7NB60H Switching Off Safe Operating Area 6/9 STGD7NB60H Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGD7NB60H TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/9 STGD7NB60H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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