STMICROELECTRONICS STGW30NB60HD

STGW30NB60HD

N-CHANNEL 30A - 600V TO-247
PowerMESH IGBT
T YPE
V CES
V CE(sat)
IC
STGW 30NB60HD
600 V
< 2.8 V
30 A
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (VCESAT)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGE WITH TURBOSWITCH
ANTIPARALLEL DIODE
1
2
3
TO-247
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ WELDING EQUIPMENTS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
V ECR
Emitter-Collector Voltage
20
V
V GE
G ate-Emitter Voltage
± 20
V
o
IC
Collector Current (continuous) at Tc = 25 C
60
A
IC
Collector Current (continuous) at Tc = 100 C
o
30
A
Collector Current (pulsed)
240
A
T otal Dissipation at Tc = 25 C
190
W
Derating Factor
1.52
W /o C
I CM (•)
P tot
T s tg
Tj
o
Storage T emperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
July 1999
1/8
STGW30NB60HD
THERMAL DATA
R thj -case
R thj -amb
R thc-h
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-heatsink
Max
Max
Typ
o
0.66
30
0.1
C/W
oC/W
o
C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
V BR(CES)
Min.
V GE = 0
Typ.
Max.
600
Unit
V
250
2000
µA
µA
± 100
nA
Max.
Unit
5
V
2.2
1.8
2.8
V
V
Typ.
Max.
Unit
T j = 25 oC
T j = 125 o C
V CE = 0
ON (∗)
Symbol
V GE(th)
V CE(SAT )
Parameter
Test Conditions
Gate Threshold
Voltage
V CE = V GE
IC = 250 µA
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
IC = 30 A
IC = 30 A
Min.
Typ.
3
Tj = 125 oC
DYNAMIC
Symbol
gf s
Parameter
Test Conditions
Forward
Transconductance
V CE =25 V
C i es
C o es
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
QG
Q GE
Q GC
Total G ate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
I CL
Min.
I C = 30 A
f = 1 MHz
IC = 30 A
20
S
V GE = 0
2300
250
60
pF
pF
pF
VGE = 15 V
150
15
72
nC
nC
nC
R G =10 Ω
120
A
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Eo n
2/8
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
I C = 30 A
R G = 10Ω
15
35
ns
ns
Turn-on Current Slope
V CC = 480 V
R G = 10 Ω
T j = 125 o C
I C = 30 A
V GE = 15 V
1000
A/µs
1000
µJ
Turn-on
Switching Losses
STGW30NB60HD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
td (o ff )
tf
E o ff(**)
E ts( ❍ )
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
I C = 30 A
V GE = 15 V
150
40
210
90
1.10
2.0
ns
ns
ns
ns
mJ
mJ
tc
t r (v off )
td (o ff )
tf
E o ff(**)
E ts( ❍ )
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
T j = 125 o C
Fall T ime
Turn-off Switching Loss
Total Switching Loss
I C = 30 A
V GE = 15 V
250
70
250
160
1.6
2.65
ns
ns
ns
ns
mJ
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
If
I fm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
t rr
Q rr
I rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T est Conditions
If = 30 A
If = 30 A
If = 30 A
dI/dt = 100 A/µS
T j = 125 oC
V R = 100 V
o
T j = 125 C
Min.
T yp.
1.7
1.55
116
406
7
Max.
Unit
30
240
A
A
2.0
V
V
nS
nC
A
(•) Pulse width limited by max. junction temperature
(❍) Include recovery losses on the STTA2006 freewheeling diode
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGW30NB60HD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGW30NB60HD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGW30NB60HD
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/8
STGW30NB60HD
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
7/8
STGW30NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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