STMICROELECTRONICS STGP10NB60S

STGP10NB60S

N-CHANNEL 10A - 600V TO-220
PowerMESH IGBT
TYPE
V CES
V CE(sat )
IC
STGP10NB60S
600 V
< 1.7 V
10 A
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
3
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
1
2
TO-220
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Value
Un it
V CES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
V ECR
Reverse Battery Protection
20
V
V GE
G ate-Emitter Voltage
± 20
V
o
IC
Collector Current (continuous) at Tc = 25 C
20
A
IC
Collector Current (continuous) at Tc = 100 C
o
10
A
Collector Current (pulsed)
80
A
80
W
0.64
W /o C
I CM (•)
P tot
o
T otal Dissipation at Tc = 25 C
Derating Factor
T s tg
Tj
Storage T emperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1999
1/8
STGP10NB60S
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
1.56
62.5
0.2
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V BR(CES)
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
V GE = 0
600
V
V BR(ECR)
Emitter-Collector
Breakdown Voltage
IC = 1 mA
VGE = 0
20
V
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
10
100
µA
µA
± 100
nA
Max.
Unit
5
V
1.15
1.35
1.25
1.7
V
V
V
Typ.
Max.
Unit
T j = 25 oC
o
T j = 125 C
V CE = 0
ON (∗)
Symbo l
V GE(th)
V CE(SAT )
Parameter
Test Con ditions
Gate Threshold
Voltage
V CE = V GE
IC = 250 µA
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
V GE = 15 V
IC = 5 A
IC = 10 A
IC = 10 A
Min.
Typ.
2.5
Tj = 125 oC
DYNAMIC
Symbo l
gf s
Parameter
Test Con ditions
Forward
Transconductance
V CE =25 V
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
QG
Gate Charge
V CE = 400 V
I CL
Latching Current
V clamp = 480 V
T j = 150 o C
C i es
C o es
C res
I C = 10 A
f = 1 MHz
IC = 10 A
Min.
5
S
V GE = 0
610
65
12
VGE = 15 V
33
780
85
15
nC
20
RG=1kΩ
pF
pF
pF
A
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
2/8
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
I C = 10 A
R G = 1 KΩ
0.7
0.46
µs
µs
Turn-on Current Slope
V CC = 480 V
R G = 1 KΩ
T j = 125 o C
I C = 10 A
V GE = 15 V
8
A/µs
0.6
mJ
Turn-on
Switching Losses
STGP10NB60S
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 100 Ω
Fall T ime
Turn-off Switching Loss
I C = 10 A
V GE = 15 V
2.2
1.2
1.2
5.0
µs
µs
µs
mJ
tc
t r (v off )
tf
E o ff(**)
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 100 Ω
Fall T ime
T j = 125 o C
Turn-off Switching Loss
I C = 10 A
V GE = 15 V
3.8
1.2
1.9
8.0
µs
µs
µs
mJ
(•) Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGP10NB60S
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGP10NB60S
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Temperature
Off Losses vs Collector Current
5/8
STGP10NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
6/8
Fig. 2: Test Circuit For Inductive Load Switching
STGP10NB60S
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STGP10NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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