STMICROELECTRONICS STP6NB50

STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE
STP6NB50
STP6NB50FP
■
■
■
■
■
V DSS
R DS(on)
ID
500 V
500 V
< 1.5 Ω
< 1.5 Ω
5.8 A
3.4 A
TYPICAL RDS(on) = 1.35 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
1
2
3
3
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP6NB50
V DS
Drain-source Voltage (V GS = 0)
Uni t
STP6NB50FP
500
V
V DGR
Drain- gate Voltage (R GS = 20 kΩ)
500
V
V GS
Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 o C
5.8
3.4
A
ID
Drain Current (continuous) at Tc = 100 C
o
3.7
2.1
A
IDM (•)
P t ot
dv/dt( 1 )
Drain Current (pulsed)
23.2
23.2
A
Total Dissipation at Tc = 25 oC
100
35
W
Derating F actor
0.8
0.28
W/ C
Peak Diode Recovery voltage slope
4.5
4.5
V/ ns
--
2000
V ISO
Insulation Withstand Voltage (DC)
T stg
Storage T emperature
Tj
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
March 1998
o
o
C
-65 to 150
o
C
150
o
C
(1) ISD ≤ 6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STP6NB50/FP
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Max
TO-220
TO-220F P
1.25
3.57
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symb ol
Max Valu e
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Parameter
5.8
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)
290
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
I DSS
Zero G ate Voltage
V DS = Max Rating
Drain Current (VGS = 0) V DS = Max Rating
I GSS
Gate-body Leakage
Current (V DS = 0)
Min.
Typ .
Max.
500
V GS = 0
Un it
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS( on)
Static Drain-source On V GS = 10V
Resistance
ID(o n)
V DS = VGS
Min.
Typ .
Max.
Un it
3
4
5
V
1.35
1.5
Ω
ID = 2.9 A
5.8
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 2.9 A
VGS = 0
Min.
Typ .
2.5
4
680
110
12
Max.
Un it
S
884
149
16
pF
pF
pF
STP6NB50/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Typ .
Max.
Un it
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 250 V I D = 2.9 A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
Test Cond ition s
Min.
11.5
8
16
12
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
21
7.2
8
30
nC
nC
nC
Typ .
Max.
Un it
7
5
15
12
10
23
ns
ns
ns
Typ .
Max.
Un it
5.8
23.2
A
A
1.6
V
I D = 5.8 A VGS = 10 V
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
Min.
V DD = 400 V I D = 5.8 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 5.8 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 5.8 A di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
435
ns
3.3
µC
15
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP6NB50/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP6NB50/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP6NB50/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP6NB50/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
0.551
L2
16.4
L4
0.645
13.0
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP6NB50/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
8/9
L4
STP6NB50/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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