STD20NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS(on ) ID ST D20NE03L 30 V < 0.020 Ω 20 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 3 2 1 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. IPAK TO-251 (Suffix ”-1”) 1 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 30 V V DGR Drain- gate Voltage (RGS = 20 kΩ) 30 V V GS Gate-source Voltage V DS Parameter ± 15 V ID Drain Current (continuous) at T c = 25 C 20** A ID Drain Current (continuous) at T c = 100 o C 20** A Drain Current (pulsed) 100 A I DM (•) P to t o o Total Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) T st g Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction T emperature (•) Pulse width limited by safe operating area (**) Value limited only by the package December 1997 50 W 0.33 W/ C 7 V/ns o -65 to 175 o C 175 o C (1) ISD ≤ 40 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/9 STD20NE03L THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max T yp o 3 100 1.5 275 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25V) Max Valu e Unit 20 A 140 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ . Max. 30 V GS = 0 Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Min. Un it V T c = 125 V GS = ± 15 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V Resistance V GS = 5V ID(o n) V DS = VGS Min. Typ . Max. Un it 1 1.8 2.5 V 0.016 0.02 0.026 Ω Ω ID = 10 A I D = 10 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 20 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/9 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 10 A VGS = 0 Min. Typ . 12 18 1850 450 160 Max. Un it S 2400 590 210 pF pF pF STD20NE03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on Time Rise Time V DD = 15 V R G =4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V Min. ID = 20 A V GS = 5 V I D = 40 A V GS = 5 V Typ . Max. Un it 25 160 33 210 ns ns 29 12 14 38 nC nC nC Typ . Max. Un it 25 120 155 33 160 210 ns ns ns Typ . Max. Un it 20 100 A A 1.5 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 24 V R G =4.7 Ω Min. I D = 40 A VGS = 5 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 20 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 40 A V DD = 20 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o Tj = 150 C 50 ns 0.9 µC 3.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STD20NE03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD20NE03L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD20NE03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD20NE03L TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 7/9 STD20NE03L TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 8/9 STD20NE03L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9