STMICROELECTRONICS STK3NA60

STK3NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
ST K3NA60
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
600 V
<4 Ω
2.7 A
TYPICAL RDS(on) = 3.3 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
SOT82
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Uni t
V DS
Drain-source Voltage (V GS = 0)
Parameter
600
V
VDGR
Drain- gate Voltage (R GS = 20 kΩ)
600
V
V GS
Gate-source Voltage
± 30
V
o
ID
Drain Current (continuous) at T c = 25 C
2.7
A
ID
Drain Current (continuous) at T c = 100 C
o
1.8
A
Drain Current (pulsed)
10.8
A
I DM (•)
P t ot
o
Total Dissipation at T c = 25 C
Derating Factor
T stg
Tj
St orage Temperature
Max. Operating Junction Temperature
60
W
0.48
W/ o C
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
March 1996
1/9
STK3NA60
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
o
2.08
62.5
0.5
300
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
2.7
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, ID = I AR , V DD = 50 V)
40
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
1.6
mJ
I AR
Avalanche Current, Repetitive or Not-Repetitive
o
(T c = 100 C, pulse width limited by Tj max, δ < 1%)
1.8
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
VGS = 0
Min.
Typ .
Max.
600
Un it
V
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C
250
1000
µA
µA
I GSS
Gate-body Leakage
Current (V DS = 0)
V GS = ± 30 V
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
V GS(th)
Gate T hreshold Voltage V DS = VGS
ID = 250 µA
R DS( on)
Static Drain-source On
Resistance
V GS = 10V
V GS = 10V
I D = 1.5 A
ID = 1.5 A
On State Drain Current
V DS > I D(on) x R DS(on) max
V GS = 10 V
ID(o n)
Min.
Typ .
Max.
Un it
2.25
3
3.75
V
3.3
4
8
Ω
Ω
Tc = 100 oC
2.9
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 1.5 A
VGS = 0
Min.
Typ .
1
2
380
57
17
Max.
Un it
S
500
75
23
pF
pF
pF
STK3NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Typ .
Max.
Un it
Turn-on T ime
Rise Time
Parameter
V DD = 300 V
ID = 1.5 A
VGS = 10 V
R G = 18 Ω
(see test circuit, figure 3)
Test Cond ition s
Min.
14
25
20
35
ns
ns
Turn-on Current Slope
V DD = 400 V
ID = 3 A
R G = 18 Ω
VGS = 10 V
(see test circuit, figure 5)
300
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V
22
6
9
30
nC
nC
nC
Typ .
Max.
Un it
13
24
12
18
34
17
ns
ns
ns
Typ .
Max.
Un it
2.7
10.8
A
A
1.6
V
I D = 3 A V GS = 10 V
A/µs
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall T ime
Cross-over T ime
Test Cond ition s
Min.
V DD = 480 V
ID = 3 A
VGS = 10 V
R G = 18 Ω
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward O n Voltage
I SD = 2.7 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 3 A
di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
460
ns
5.6
µC
24
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STK3NA60
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STK3NA60
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
STK3NA60
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
6/9
Fig. 2: Unclamped Inductive Waveform
STK3NA60
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/9
STK3NA60
SOT-82 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
11.3
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.04
0.106
c1
1.2
0.047
D
15.7
0.618
e
2.2
0.087
e3
4.4
0.173
F
3.8
0.150
H
2.54
0.100
C
D
H
B
F
A
c1
b
e
b1
e3
8/9
P032A
STK3NA60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
9/9