STMICROELECTRONICS STTA106RL

STTA106/U
®
TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1A
VRRM
600V
trr (typ)
20ns
VF (max)
1.5V
FEATURES AND BENEFITS
SPECIFIC TO FREEWHEEL MODE
OPERATIONS : FREEWHEEL OR BOOSTER
DIODE
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATIONS
SMB
STTA106U
F126
STTA106
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes.
TURBOSWITCH family drastically cuts losses in
both the diode and the associated switching IGBT
and MOSFET in all freewheel mode operations
and is particulary suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Available either in SMB or F126 axial package,
these 600V devices are particularly intended for
use on 240V domestic mains.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
Value
Unit
600
V
6
A
IFRM
Repetitive peak forward current
tp = 5 µs
F = 5kHz square
10
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
25
A
125
°C
- 65 to + 150
°C
Tj
Tstg
Maximum operating junction temperature
Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5C
1/8
STTA106/U
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Junction to lead
Rth(j-I)
Conduction power
dissipation
Pmax
Unit
23
°C/W
SMB
Junction to lead L=5mm
P1
Value
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
F126
45
°C/W
IF(AV) = 0.8A δ = 0.5
Tlead= 93°C
SMB
1.4
W
IF(AV) = 0.8A δ = 0.5
Tlead= 60°C
F126
1.4
W
Tlead= 90°C
SMB
1.5
W
Tlead= 60°C
F126
1.5
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Parameter
Test conditions
Forward voltage drop
*
IR **
Reverse leakage current
Vto
Threshold voltage
Rd
Dynamic resistance
Test pulse :
Typ
Max
Unit
Tj = 25°C
Tj = 125°C
1.75
1.5
V
1.1
VR = 0.8 x
VRRM
Tj = 25°C
Tj = 125°C
10
750
µA
250
Ip < 3.IF(AV)
Tj = 125°C
1.15
V
350
mΩ
Max
Unit
IF = 1A
Min
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + Rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
trr
IRM
S factor
Parameter
Test conditions
Min
Reverse
recovery time
Tj = 25°C
IF = 0.5 A IR = 1A
Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR = 30V
Maximum
recovery current
Tj = 125°C VR = 400V
dIF/dt = -8 A/µs
dIF/dt = -50 A/µs
Softness factor
Tj = 125°C VR = 400V
dIF/dt = -50 A/µs
Typ
ns
20
50
IF = 1A
A
0.6
1.6
IF =1A
/
1.1
TURN-ON SWITCHING
Symbol
2/8
Parameter
tfr
Forward
recovery time
VFp
Peak forward
voltage
Test conditions
Tj = 25°C
IF = 1 A, dIF/dt = 8 A/µs
measured at 1.1 × VF max
Min
Typ
Max
Unit
500
ns
10
V
STTA106/U
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward current (maximum values).
P1(W)
1.8
δ = 0.2
δ = 0.5
δ = 0.1
1.6
δ = 0.05
1.4
1.2
δ=1
1.0
0.8
0.6
0.4
0.2
IF(av) (A)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig. 3: Peak reverse recovery current versus dIF/dt
(90% confidence).
IFM(A)
1E+1
Tj=25°C
1E-1
VFM(V)
1E-2
0.0
225
200
175
150
125
100
75
50
25
0
VR=400V
Tj=125°C
IF=2*IF(av)
5
4
IF=IF(av)
3
2
1
dIF/dt(A/µs)
0
1.0
1.5
2.0
2.5
3.0
trr(ns)
6
0
0.5
Fig. 4: Reverse recovery time versus dIF/dt (90%
confidence).
IRM(A)
8
7
Tj=125°C
1E+0
50
100
150
200
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical
values).
S factor
VR=400V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
0
20
40
60
dIF/dt(A/µs)
80 100 120 140 160 180 200
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125°C).
1.1
1.6
IF=2*IF(av)
VR=400V
Tj=125°C
1.4
1.0
S factor
1.2
0.9
IRM
1.0
0.8
0.8
0.6
0
10
20
30
dIF/dt(A/µs)
40 50 60
Tj(°C)
70
80
90
100
0.7
25
50
75
100
125
3/8
STTA106/U
Fig. 7: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 8: Forward recovery time versus dIF/dt (90%
confidence).
VFP(V)
tfr(ns)
40
IF=2A
Tj=125°C
35
30
25
20
15
10
5
0
dIF/dt(A/µs)
0
20
40
60
80
100 120 140 160 180 200
Fig. 9: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
10
F=1MHz
5
2
VR(V)
1
1
4/8
10
100
200
550
500
450
400
350
300
250
200
150
100
50
0
IF=2A
VFR=1.1*VF max.
Tj=125°C
dIF/dt(A/µs)
0
20
40
60
80
100 120 140 160 180 200
STTA106/U
APPLICATION DATA
The TURBOSWITCHTM is especially designed to
provide the lowest overall power losses in any
"Freewhell Mode" application (see fig. A)
considering both diode and companion transistor,
thus optimizing the overall performance in the end
application.
The way of calculating the power losses is given
below :
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
REVERSE
LOSSES
in the diode
CONDUCTION
LOSSES
in the diode
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the transistor
due to the diode
Fig. A : "FREEWHEEL" MODE
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH
IL
VR
tp
T
F = 1/T
δ = tp/T
LOAD
5/8
STTA106/U
APPLICATION DATA (Cont’d)
Fig. B : STATIC CHARACTERISTICS
Conduction losses :
I
P1 = Vto x IF(AV) + Rd x IF2(RMS)
IF
Rd
VR
V
IR
VF
V to
Reverse losses :
P2 = VR x IR x (1 - δ)
Fig. C : TURN-OFF CHARACTERISTICS
Turn-on losses :
(in the transistor, due to the diode)
V
IL
VR × IRM 2 × (3+2 × S) × F
6 x dIF ⁄ dt
VR × IRM × IL × (S + 2) × F
+
2 × dIF ⁄ dt
TRANSISTOR
I
P5 =
t
I
dI F /dt
DIODE
ta tb
V
t
dI R /dt
I RM
VR
trr = ta + tb
I
dIF /dt = VR /L
S = tb / ta
P3 =
ta tb
V
VR × IRM 2 × S × F
6 x dIF ⁄ dt
t
IRM
dI R /dt
VR
trr = ta + tb
S = tb/ta
6/8
Turn-off losses (in the diode) :
RECTIFIER
OPERATION
P3 and P5 are suitable for power MOSFET and
IGBT
STTA106/U
APPLICATION DATA (Cont’d)
Fig. D : TURN-ON CHARACTERISTICS
IF
I Fmax
dI F /dt
Turn-on losses :
P4 = 0.4 (VFP - VF) x IFmax x tfr x F
0
t
VF
V Fp
VF
1.1V F
0
t
tfr
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
E1
REF.
D
E
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
A1
A2
C
L
b
FOOTPRINT DIMENSIONS (in millimeters)
2.3
1.52
2.75
1.52
7/8
STTA106/U
PACKAGE MECHANICAL DATA
F126
C
DIMENSIONS
C
A
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
D
D
B
A
6.05 6.20 6.35 0.238 0.244 0.250
B
2.95 3.00 3.05 0.116 0.118 0.120
C
D
26
31 1.024
1.220
0.76 0.81 0.86 0.030 0.032 0.034
MARKING
Type
Marking
Package
Weight
Base Qty
Delivery mode
STTA106U
T01
SMB
0.11g
2500
tape & reel
STTA106
STTA106
F126
0.39g
1000
box
STTA106RL
STTA106
F126
0.39g
6000
tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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