STTA1512P/PI TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 15A VRRM 1200V trr (typ) 55ns VF (max) 1.9V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance : 12pF A A K K SOD93 Isolated DOP3I STTA1512P STTA1512PI DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 1200 V 50 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 220 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 150 A Tstg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5A 1/9 STTA1512P/PI THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Conditions Value Unit 1.6 2.1 °C/W Junction to case thermal resistance SOD93 DOP3I Conduction power dissipation IF(AV) = 15A δ =0.5 SOD93 DOP3I Tc= 95°C Tc= 78°C 34 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 DOP3I Tc= 89 Tc= 70°C 38 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter IF =15A Reverse leakage current Vto Threshold voltage Rd Dynamic resistance Test pulses : Test conditions Forward voltage drop VR =0.8 x VRRM Ip < 3.IF(AV) Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Typ Max Unit 1.3 2.1 1.9 V V 100 6.0 1.48 µA mA V 25 mΩ Max Unit ns 1.3 Tj = 125°C * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x I F2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr IRM S factor Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -120 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 600V dIF/dt = -500 A/µs Min Typ 55 105 IF =15A A 20 33 IF =15A / 1.2 TURN-ON SWITCHING Symbol t fr VFp 2/9 Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25°C IF =15 A, dIF/dt = 120 A/µs measured at 1.1 × VFmax Tj = 25°C IF =15A, dIF/dt = 120 A/µs IF =40A, dIF/dt = 500 A/µs Min Typ Max Unit ns 900 V 30 40 STTA1512P/PI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) P1(W) 40 δ = 0.1 δ = 0.2 200 δ = 0.5 Tj=125°C 100 30 δ = 0.1 20 10 T 10 δ=tp/T IF(av) (A) 0 0 2 4 6 8 10 12 14 16 VFM(V) tp 18 1 0.0 20 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-c)/Rth(j-c) 1.0 50 0.8 40 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) 30 0.6 δ = 0.5 0.4 20 IF=0.5*IF(av) δ = 0.2 0.2 δ = 0.1 0.0 1E-4 10 tp(s) Single pulse 1E-3 dIF/dt(A/ µs) 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 0 100 200 300 400 500 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). trr(ns) S factor 800 2.00 IF<2*IF(av) VR=600V Tj=125°C IF=2*IF(av) 700 VR=600V Tj=125°C 1.80 600 1.60 500 IF=IF(av) 1.40 400 1.20 300 1.00 200 IF=0.5*IF(av) 100 0 0.80 dIF/dt(A/ µs) 0 100 200 300 400 500 0.60 dIF/dt(A/ µs) 0 100 200 300 400 500 3/9 STTA1512P/PI Fig. 7: Relative variation of dynamic parameters versus junction temperature. Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). S factor VFP(V) 1.1 70 Tj=125°C IF=IF(av) 60 1.0 50 S factor 40 0.9 IRM 30 20 0.8 10 Tj(°C) 0.7 25 50 0 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr( ns) 600 Tj=125°C VFR=1.1*VF max. IF=IF(av) 500 400 300 200 100 4/9 dIF/dt(A/ µs) 0 100 200 300 400 500 dIF/dt(A/ µs) 0 100 200 300 400 500 STTA1512P/PI APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the tansistor due to the diode Fig. A : ”FREEWHEEL” MODE. SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR tp T F = 1/T δ = tp/T LOAD 5/9 STTA1512P/PI Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM tp T F = 1/T δ = tp/T Fig. D : RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS Conduction losses : I P1 = Vto . IF(AV) + Rd . IF2(RMS) IF Rd VR V IR V to VF Reverse losses : P2 = VR . IR . (1 - δ) 6/9 STTA1512P/PI APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × ( 3 + 2 × S ) × F 6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F + 2 x dIF ⁄ dt TRANSISTOR I P5 = t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t P3 = dI R /dt I RM VR × IRM 2 × S × F 6 x dIF ⁄ dt VR trr = ta + tb I dI F /dt = VR /L S = tb / ta RECTIFIER OPERATION Turn-off losses : (with non negligible serial inductance) ta tb V t IRM dI R /dt VR P3’ = VR × IRM 2 × S × F + 6 x dIF ⁄ dt L × IRM 2 × F 2 P3,P3’ and P5 are suitable for powerMOSFET and IGBT trr = ta + tb S = tb/ta Fig. G: TURN-ON CHARACTERISTICS IF I Fmax dI F /dt 0 t VF Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F V Fp VF 1.1V F 0 tfr t 7/9 STTA1512P/PI PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.70 1.17 4.90 0.185 1.37 0.046 D 2.50 0.098 D1 E 1.27 0.050 0.50 0.78 0.020 0.031 F 1.10 1.30 0.043 0.051 F3 G 10.80 11.10 0.425 0.437 14.70 15.20 0.578 12.20 0.598 0.480 16.20 0.638 H L 1.75 L2 L3 L5 O 0.069 18.0 3.95 L6 8/9 0.193 0.054 0.709 4.15 0.156 31.00 4.00 0.163 1.220 4.10 0.157 0.161 STTA1512P/PI PACKAGE MECHANICAL DATA DOP3I (insulated) REF. DIMENSIONS Millimeters Inches A Min. 4.4 Max. 4.6 Min. 0.173 Max. 0.181 B 1.45 1.55 0.057 0.061 C D 14.35 0.5 15.60 0.7 0.565 0.020 0.614 0.028 E 2.7 2.9 0.106 0.114 F G 15.8 20.4 16.5 21.1 0.622 0.815 0.650 0.831 H K 15.1 3.4 15.5 3.65 0.594 0.134 0.610 0.144 L 4.08 4.17 0.161 0.164 N P 10.8 1.20 11.3 1.40 0.425 0.047 0.444 0.055 R 4.60 typ. 0.181 typ. Ordering type Marking Package Weight Base qty Delivery mode STTA1512P STTA1512P SOD93 3.79g 30 Tube STTA1512PI STTA1512PI DOP3I 4.52g 30 Tube Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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