SD1456 (TCC3100) RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS .. .. .. . .. 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION P OUT = 100 W MIN. WITH 11.0 dB GAIN .400 x .425 8LFL (M168) epoxy sealed ORDER CODE SD1456 BRANDING TCC3100 PIN CONNECTION DESCRIPTION The SD1456 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and transposers. 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 33 V VEBO Emitter-Base Voltage 3.5 V Device Current 16 A Power Dissipation 150 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 1.2 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/5 SD1456 (TCC3100) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 50mA IE = 0mA 65 — — V BVCER IC = 50mA RBE = 15Ω 60 — — V BVCEO IC = 50mA IB = 0mA 33 — — V BVEBO IE = 5mA IC = 0mA 3.5 — — V hFE VCE = 5V IC = 500mA 20 — 150 — DYNAMIC (Class AB) Symbol Value Test Conditions Min. Typ. Max. Unit f = 225 MHz VCE = 28 V IC = 2 x 100 mA 100 — — W GP ηc POUT = 100 W VCE = 28 V IC = 2 x 100 mA 11 — — dB POUT = 100 W VCE = 28 V IC = 2 x 100 mA 70 — — % COB f = 1 MHz VCB = 28 V — 60 — pF POUT DYNAMIC (Class A) Symbol Value Test Conditions Min. Typ. Max. POUT * f = 225 MHz VCE = 28 V IC = 2 x 2.5 A 28 32 — W G P* PIN = 1.1 W VCE = 28 V IC = 2 x 2.5 A 14 15 — dB IMD3* PIN = 1.1 W VCE = 28 V PREF = 28 W — −51 — dB Note: * Class A Performance Charact eristi cs Indi cate Capabilit y but are not Tested. IMD3 - 3 T one Meaurement; −8, −7, −16dB relative to PREF TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 Unit BROADBAND POWER GAIN vs FREQUENCY SD1456 (TCC3100) TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT COLLECTOR EFFICIENCY vs FREQUENCY IMPEDANCE DATA 170 MHz ZIN (Ω) 1.3 + j 0.6 ZOUT (Ω) 9.5 − j 10.0 200 MHz 1.0 + j 1.0 9.0 − j 8.0 230 MHz 0.9 + j 1.8 6.3 − j 6.5 FREQ. POUT = 100 W VCE = 28 V ICQ = 2 x 100 mA Class AB 3/5 SD1456 (TCC3100) IMPEDANCE DATA 170 MHz ZIN (Ω) 1.05 + j 0.65 ZOUT (Ω) 13.5 − j 9.0 200 MHz 0.9 + j 1.1 11.0 − j 6.5 230 MHz 1.25 + j 1.8 9.5 − j 7.7 FREQ. VCE = 28 V ICQ = 2 x 2.5 A Class A 4/5 SD1456 (TCC3100) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0168 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5