SD1538-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . .. .. .. . . DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS 200 W (typ.) IFF 1030 - 1090 MHz 150 W (min.) DME 1025 - 1150 MHz 140 W (typ.) TACAN 960 - 1215 MHz 7.8 dB MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT AND OUTPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION The SD1538-08 is a gold metallized, silicon NPN power transistor. The SD1538-08 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-08 is packaged in a metal/ceramic package with internal input/output matching, resulting in improved broadband performance and low thermal resistance. .400 x .400 2LFL (M138) hermetically sealed ORDER CODE SD1538-08 BRANDING 1538-8 PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 11 A Power Dissipation 583 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.30 °C/W IC PDISS THERMAL DATA RTH(j-c) September 6, 1994 Junction-Case Thermal Resistance 1/5 SD1538-08 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO I C = 10mA IE = 0mA 65 — — V BVCES I C = 25mA VBE = 0V 65 — — V BVEBO I E = 5mA IC = 0mA 3.5 — — V ICES VCE = 50V IE = 0mA — — 10 mA hFE VCE = 5V IC = 300mA 5 — — — DYNAMIC Symbol Value Test Conditions Min. Typ. Max. POUT f = 1025 − 1150 MHz PIN = 25 W VCE = 50 V 150 — — W PG f = 1025 − 1150 MHz PIN = 25 W VCE = 50 V 7.8 — — dB Note: Pulse W idth = 10 µ Sec, Duty Cyle = 1% TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT 2/5 Unit POWER OUTPUT vs FREQUENCY SD1538-08 TYPICAL PERFORMANCE (cont’d) EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY IMPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/5 SD1538-08 TEST CIRCUIT C1, C2 C3 C4 C5 : : : : .6 - 4.5pF Gigatrim .100 x .100 120pF Chip Capacitor .100 x .100 470pF Chip Capacitor 100µF Electrolytic L1 L2 : #20 AWG : 3 Turns, #20 AWG Wound on #32 Drill Bit Board Material: Telfon Er = 2.5, Thickness = .031” 4/5 SD1538-08 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0138 rev. D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.