STMICROELECTRONICS TDA8179S

TDA8179S
TV VERTICAL DEFLECTION BOOSTER
..
.
POWER AMPLIFIER
FLYBACK GENERATOR
THERMAL PROTECTION
HEPTAWATT
(Plastic Package)
DESCRIPTION
Designed for monitors and high performance TVs,
the TDA8179S vertical deflection booster delivers
flyback voltages up to 90V.
The TDA8179S operates with supplies up to 42V
and provides up to 2App output current to drive to
yoke.
The TDA8179S is offered in HEPTAWATT package.
ORDER CODE : TDA8179S
PIN CONNECTIONS
7
6
5
4
3
2
1
Non-inverting Input
Output Stage Supply
Output
GND
Flyback Generator
Supply Voltage
Inverting Input
8179S-01.EPS
Tab connected to pin 4
May 1993
1/6
TDA8179S
BLOCK DIAGRAM
+ VS
2
6
3
FLYBACK
GENERATOR
1
POWER
AMPLIFIER
5
7
YOKE
THERMAL
PROTECTION
8179S-02.EPS
4
APPLICATION CIRCUIT
+ VS
2
IN
VREF
1
6
TDA8179S
3
5
OUT
7
YOKE
8179S-03.EPS
4
Note : For values see ”Easy Design of Vertical Deflection Stages” (software available from our sales offices)
2/6
TDA8179S
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
VS
Supply Voltage (pin 2)
50
V
V5 , V6
Flyback Peak Voltage
100
V
V1 , V7
Amplifier Input Voltage
+ VS
Output Peak Current
A
2
2
1.8
Non-repetitive, t = 2ms
f = 50 or 60Hz, t ≤ 10µs
f = 50 or 60Hz, t > 10µs
I3
100
1.8
Pin 3 DC at V5 < V2
Pin 3 Peak Flyback Current at f = 50 or 60Hz, tfly ≤ 1.5ms
o
mA
A
Ptot
Total Power Dissipation at TC = 70 C
Tstg
Storage Temperature
- 40, + 150
20
o
W
C
Tj
Junction Temperature
0, +150
o
C
8179S-01.TBL
IO
THERMAL DATA
Symbol
Rth (j-c)
Parameter
Value
Junction-case Thermal Resistance
Max.
Unit
o
3
C/W
8179S-02.TBL
Symbol
ELECTRICAL CHARACTERISTICS
(V7 = 2.2V, VS = 42V, TA = 25oC, unless otherwise specified)
(refer to the test circuits - see Figure 1 next page)
Parameter
Test Conditions
VS
Operating Supply Voltage Range
I2
Pin 2 Quiescent Current
I3 = 0
I5 = 0
I6
Pin 6 Quiescent Current
I3 = 0
I5 = 0
I1
Amplifier Bias Current
V1 = 1V
V3L
Scanning Voltage
I3 = 20mA
V5
Quiescent Output Voltage
Min.
Typ.
10
Max.
Unit
42
V
20
mA
20
40
mA
- 0.2
-1
µA
1.3
1.8
V
24.2
17.8
25
18.5
10
V
VS = 42V
VS = 35V
R a = 3.9kΩ
R a = 5.6kΩ
23.4
17
V5L
Output Saturation Voltage to GND
I5 = 1A
1.2
1.5
V
V5H
Output Saturation Voltage to Supply
- I5 = 1A
2.2
2.6
V
VD5 - 6
Diode Forward Voltage between Pins 5-6
ID = 1A
1.5
3
V
VD3 - 2
Diode Forward Voltage between Pins 3-2
ID = 1A
1.5
3
V
R1
Input Resistance
200
kΩ
Tj
Junction Temperature for Thermal
Shutdown
140
o
8179S-03.TBL
Symbol
C
3/6
TDA8179S
FIGURE 1 : DC Test Circuits
Figure 1a : Measurement of I1, I2, I6
Figure 1b : Measurement of V5H
+ VS
I2
+ VS
I6
2
V5H
6
2
6
5
10k Ω
TDA8179S
TDA8179S
1
S1
5
a
1
b
7
4
7
I1
-I5
4
V7
V
1V
7
S1 : (a) I2 and I6, (b) I1
Figure 1c : Measurement of V3L, V5L
8179S-05.EPS
8179S-04.EPS
1V
Figure 1d : Measurement of V5
+ VS
+ VS
I 3 or I 5
2
2
6
6
S1
a
3
b
TDA8179S
1
5
TDA8179S
1
5
7
7
4
V5
V7
4
39k Ω
3V
V7
V 3L
V 5L
4/6
8179S-07.EPS
S1 : (a) V3L, (b) V5L
8179S-06.EPS
Re
TDA8179S
Figure 2 : SOAof Each Output Power Transistor at TA = 25oC
10
I C (A)
Pulse Operation*
I C max. pulsed
2
1.2
1
I C max. continued
1ms
10ms
DC
Operation
-1
10
VCE (V)
8179S-08.EPS
* For single non repetitive pulse
-2
10
1
10
2
10
5/6
TDA8179S
PACKAGE MECHANICAL DATA : HEPTAWATT
E
L
D1
C
D
M
A
M1
L1
L2
G2
H3
G1
L3
G
L5
F
PM-HEPTV.EPS
L7
H2
F1
Dia.
L6
Min.
A
C
D
D1
E
F
F1
G
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia.
Millimeters
Typ.
2.4
1.2
0.35
0.6
2.41
4.91
7.49
2.54
5.08
7.62
10.05
Max.
4.8
1.37
2.8
1.35
0.55
08
0.9
2.67
5.21
7.8
10.4
10.4
Min.
0.094
0.047
0.014
0.024
0.095
0.193
0.295
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
0.668
0.587
0.848
0.891
3
15.8
6.6
0.102
0.594
0.236
2.8
5.08
3.65
0.100
0.200
0.300
0.396
16.97
14.92
21.54
22.62
2.6
15.1
6
Inches
Typ.
0.118
0.622
0.260
0.110
0.200
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
2
Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
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6/6
HEPTV.TBL
Dimensions