STMICROELECTRONICS TDA8171

TDA8171
VERTICAL DEFLECTION BOOSTER
..
..
..
POWER AMPLIFIER
FLYBACK GENERATOR
THERMAL PROTECTION
OUTPUT CURRENT UP TO 3.0APP
FLYBACK VOLTAGE UP TO 70V (on Pin 5)
INTERNAL REFERENCE VOLTAGE
DESCRIPTION
HEPTAWATT
(Plastic Package)
Designed for monitors and high performance TVs,
the TDA8171 vertical deflection booster delivers
flyback voltages up to 70V.
The TDA8171 operates with supplies up to 35V and
provides up to 3APP output current to drive the yoke.
The TDA8171 is offered in HEPTAWATT package.
ORDER CODE : TDA8171
PIN CONNECTIONS
7
6
5
4
3
2
1
8171-01.EPS
NON-INVERTING INPUT + REFERENCE VOLTAGE
OUTPUT STAGE SUPPLY
OUTPUT
GROUND
FLYBACK GENERATOR
SUPPLY VOLTAGE
INVERTING INPUT
Tab connected to Pin 4
BLOCK DIAGRAM
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
GENERATOR
2
6
3
FLYBACK
GENERATOR
REFERENCE
VOLTAGE
INVERTING INPUT 1
10kΩ
7
5
OUTPUT
THERMAL
PROTECTION
TDA8171
8171-02.EPS
NON-INVERTING
+ REFERENCE VOLTAGE
POWER
AMPLIFIER
4
GROUND
December 1998
1/4
TDA8171
ABSOLUTE MAXIMUM RATINGS
Parameter
VS
Supply Voltage (Pin 2) (see Note 1)
V6
Flyback Peak Voltage (Pin 6) (see Note 1)
V1 , V7
Amplifier Input Voltage (Pins 1-7) (see Note 1)
Value
Unit
40
V
75
V
- 0.3, + VS
V
2.5
A
IO
Maximum Output Peak Current (see Notes 2 and 3)
I3
Maximum Sink Current (first part of flyback) (t < 1ms)
2.5
A
I3
Maximum Source Current (t < 1ms)
2.5
A
VESD
Electrostatic Handling for all pins (see Note 4)
2000
V
Toper
Operating Ambient Temperature
- 20, + 75
o
Tstg
Storage Temperature
- 40, + 150
o
C
Tj
Junction Temperature
+150
o
C
Notes : 1.
2.
3.
4.
C
8171-01.TBL
Symbol
Versus Pin 4.
The output current can reach 4A peak for t ≤ 10µs (up to 120Hz).
Provided SOAR is respected (see Figures 1 and 2).
Equivalent to discharging a 100pF capacitor through a 1.5kΩ series resistor.
THERMAL DATA
Parameter
Value
Unit
o
Rth (j-c)
Junction-case Thermal Resistance
Tt
Temperature for Thermal Shutdown
150
o
C
Tjr
Recommended Max. Junction Temperature
120
o
C
Max.
3
C/W
8171-02.TBL
Symbol
ELECTRICAL CHARACTERISTICS
(VS = 35V, TA = 25oC, unless otherwise specified)
Parameter
Test Conditions
VS
Operating Supply Voltage Range
I2
Pin 2 Quiescent Current
I3 = 0, I5 = 0
I3 = 0, I5 = 0, V6 = 35V
I6
Pin 6 Quiescent Current
IO
Max. Peak Output Current
I1
Amplifier Bias Current
V7
Reference Voltage
∆V7/∆VS
∆V7/∆t
Min.
9
8
Voltage Gain
Output Saturation Voltage to GND (Pin 4)
V5H
Max.
1
V
20
mA
30
mA
1.5
A
-1
µA
2
mV/V
V
mV/oC
0.15
80
I5 = 1.5A
Unit
35
2.35
Reference Voltage Drift versus Temperature
V5L
15
V1 = 1V
Reference Voltage Drift versus Supply Voltage
GV
Typ.
10
dB
1
1.7
V
Output Saturation Voltage to Supply (Pin 6)
I5 = - 1.5A
1.8
2.3
V
VD5 - 6
Diode Forward Voltage between Pins 5-6
I5 = 1.5A
1.8
2.3
V
VD3 - 2
Diode Forward Voltage between Pins 3-2
I3 = 1.5A
1.6
2.2
V
V3SL
Saturation Voltage on Pin 3
I3 = 20mA
0.4
1
V
V3SH
Saturation Voltage to Pin 2 (2nd part of flyback)
I3 = - 1.5A
2.1
2.8
V
2/4
8171-03.TBL
Symbol
TDA8171
APPLICATION CIRCUIT
+ VS
CF
2
6
3
FLYBACK
GENERATOR
REFERENCE
VOLTAGE
R5
1
POWER
AMPLIFIER
TDA8171
4
R3
YOKE
THERMAL
PROTECTION
330Ω
7
5
0.47µF 1.5Ω
10kΩ
R4
CL
R2
Figure 1 : Output Transistors SOA
(for secondary breakdown)
8171-03.EPS
R1
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
ISB (%)
IC (A)
100
10
@ Tcase = 25°C
90
1
80
t = 1ms
t = 10ms
t = 100ms
VCE (V)
10-2
1
10
102
Tcase (°C)
60
25
50
75
100
125
3/4
8171-05.EPS
70
8171-04.EPS
10-1
TDA8171
PM-HEPTV.EPS
PACKAGE MECHANICAL DATA : HEPTAWAT
A
C
D
D1
E
F
F1
G
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia.
Min.
Millimeters
Typ.
2.4
1.2
0.35
0.6
2.41
4.91
7.49
2.54
5.08
7.62
10.05
Max.
4.8
1.37
2.8
1.35
0.55
08
0.9
2.67
5.21
7.8
10.4
10.4
Min.
0.094
0.047
0.014
0.024
0.095
0.193
0.295
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
0.668
0.587
0.848
0.891
3
15.8
6.6
0.102
0.594
0.236
2.8
5.08
3.65
0.100
0.200
0.300
0.396
16.97
14.92
21.54
22.62
2.6
15.1
6
Inches
Typ.
0.118
0.622
0.260
0.110
0.200
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - All Rights Reserved
Purchase of I2C Components of STMicroelectronics, conveys a license under the Philips I2C Patent.
Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
4/4
HEPTV.TBL
Dimensions