SD1733 (TH513) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .. .. .. OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V Device Current 3.25 A Power Dissipation 127 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 2.0 °C/W IC PDISS THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1/4 SD1733 (TH513) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES IC = 100mA VBE = 0V 110 — — V BVCEO IC = 200mA IB = 0mA 55 — — V BVEBO IE = 10mA IC = 0mA 4.0 — — V hFE VCE = 6V IC = 1.4A 19 — 50 — DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit f = 30 MHz VCE = 50 V 75 — — W G P* POUT = 75 W PEP VCE = 50 V 14 — — dB IMD* η c* POUT = 75 W PEP VCE = 50 V — — −30 dBc POUT = 75 W PEP VCE = 50 V 37 — — % COB f = 1 MHz VCB = 50 V — — 100 pF POUT Note: 2/4 Value * f1 = 30.00 MHz, f2 = 30. 001 MHz SD1733 (TH513) TEST CIRCUIT C1 C2 C3, C4 C5 C6 C7 C9 C10 C11 : : : : : : : : : 20 - 500pF 50 - 500pF 3.9nF 100nF 2.2µF 56pF 100pF 20 - 150pF 20 - 500pF L1 L2 L3 L4 L5 R2 R3 : 3 Turns, Diameter Wire 1.5mm, Int. Diameter 7mm, Pitch 2.5mm : 22µH Choke Coil : 4 Turns, Diameter Wire 1.5mm, Int. Diameter 10mm, Pitch 2.5mm : Ferroxcube Choke Coil : 7 Turns, Diameter Wire 1.5mm, Int. Diameter 12mm, Pitch 2.5mm : 33Ω : 4.7Ω BIAS CIRCUIT 3/4 SD1733 (TH513) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0135 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4