SD1730 (TH560) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .. .. .. .. OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING TH560 PIN CONNECTION DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. 1. Collector 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V Device Current 16 A Power Dissipation 320 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.6 °C/W IC PDISS THERMAL DATA RTH(j-c) September 7, 1994 Junction-Case Thermal Resistance 1/6 SD1730 (TH560) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCES I C = 100 mA VBE = 0 V 70 — — V BVCEO I C = 200 mA IB = 0 mA 35 — — V BVEBO I E = 20 mA IC = 0 mA 4.0 — — V I CEO VCE = 30 V IE = 0 mA — — 5 mA ICES VCE = 35 V IE = 0 mA — — 5 mA hFE VCE = 5 V IC = 7 A 15 — 60 — DYNAMIC Symbol Value Test Conditions Min . Typ. Max. Unit f = 30 MHz VCE = 28 V ICQ = 750 mA 220 — — W PG* POUT = 220 W PEP VCE = 28 V ICQ = 750 mA 12 — — dB IMD* η c* POUT = 220 W PEP VCE = 28 V ICQ = 750 mA — — −30 dBc POUT = 220 W PEP VCE = 28 V ICQ = 750 mA 40 — — % COB f = 1 MHz VCB = 28 V — 450 — pF — ∞:1 — VSWR POUT Load POUT = 220 W PEP Mismatch Note: * f1 = 30.00 MHz, f2 = VCE = 28 V ICQ = 750 mA 30.001 MHz TYPICAL PERFORMANCE POWER OUTPUT PEP vs POWER INPUT 2/6 COLLECTOR EFFICIENCY vs POWER OUTPUT PEP SD1730 (TH560) TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT PEP POWER GAIN vs POWER OUTPUT IMPEDANCE DATA FREQ. 30 MHz Z IN (Ω) 1.15 + j 0.41 ZCL (Ω) 1.25 + j 1.92 3/6 SD1730 (TH560) TEST CIRCUIT C1 : 180pF C2, C4, C6, C8, C10, C12 C14, C16 : Arco 428 C3 : 820pF C5, C13 : 680pF C7, C11 : 1.2nF C9 : 1.5nF C17, C22 : 470µF, 40V C18 : 10nF C19, C21 C23 : 1nF C20, C24 : 100nF, 63V 4/6 L1 L2, L5 L3, L4 L6 L7 L8 L9 L10 : : : : : : : : 3 Turns, Diameter 10mm, 1.3mm Wire, Length 10mm Hair Pin Copper foil 40 x 5mm, 0.2mm Thick Hair Pin Copper Foil 10 x 5mm, 0.2mm Thick 5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm 3 Turns, Diameter 10mm, 1.3mm Wire, Length 25mm Choke Choke Choke SD1730 (TH560) BIAS CIRCUIT 5/6 SD1730 (TH560) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0174 rev. A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6