TODV 640 ---> 1240 ALTERNISTORS .. . FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) RD91 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit RMS on-state current (360° conduction angle) Tc = 75 °C 40 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 2.5 ms 590 A tp = 8.3 ms 370 tp = 10 ms 350 I2t value tp = 10 ms 610 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C TODV Unit 640 840 1040 1240 600 800 1000 1200 V 1/5 TODV 640 ---> 1240 THERMAL RESISTANCES Symbol Value Unit 0.1 °C/W Rth (j-c) DC Junction to case for DC 1.2 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 0.9 °C/W Rth (c-h) Parameter Contact (case-heatsink) with grease GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Unit IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 200 mA VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III TYP 2.5 µs IL IG=1.2 IGT Tj=25°C I-III TYP 100 mA II 200 IH * IT= 500mA gate open Tj=25°C TYP 50 mA VTM * ITM = 60A tp= 380µs Tj=25°C MAX 1.8 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.02 mA Tj=125°C MAX 8 Linear slope up to VD=67%VDRM gate open Tj=125°C MIN 500 V/µs (dV/dt)c = 200V/µs Tj=125°C MIN 35 A/ms dV/dt * (dI/dt)c * Rated Rated (dV/dt)c = 10V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 Value 142 TODV 640 ---> 1240 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 0.1 tp (s) 0.01 1E-3 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. 1E-2 1E-1 1E +0 1 E+1 Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 TODV 640 ---> 1240 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : Safe operating area. 4/5 Fig.8 : On-state characteristics (maximum values). TODV 640 ---> 1240 PACKAGE MECHANICAL DATA RD91 Plastic L2 a2 LI REF. DIMENSIONS Millimeters Min. A b2 d1 C a1 b1 a1 F E I A B 30.30 1.177 1.193 1.575 0.867 27.00 13.50 16.50 1.063 0.531 0.650 b2 24.00 0.945 C 14.00 0.551 c1 N1 N2 Max. 22.00 B c1 Inches Min. 40.00 29.90 a2 c2 Max. 3.50 0.138 c2 1.95 3.00 0.077 0.118 E 0.70 0.90 0.027 0.035 F 4.00 4.50 0.157 0.177 I 11.20 13.60 0.441 0.535 L1 3.10 3.50 0.122 0.138 L2 1.70 1.90 0.067 0.075 N1 33° 43° 33° 43° N2 28° 38° 28° 38° Marking : type number Weight : 20 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5