KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF (MAX.) TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage 15 V Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 30 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 15 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=12V, IE=0 Typ. Max. V V 0.1 hFE DC Current Gain VCE=10V, IC=5mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA fT Current Gain Bandwidth Product VCE=10V, IC=5mA 40 Cob Output Capacitance VCB=10V, IE=0, f=1MHz Cc·rbb’ Collector-Base Time Constant VCE=10V, IE=5mA f=31.9MHz µA 240 0.5 800 Units V 1100 10 V MHz 1.5 pF 20 ps hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1730 Typical Characteristics 10 1000 VCE = 10V IB = 80µA 8 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB = 90µA IB = 70µA 6 IB = 60µA 4 IB = 40µA IB = 50µA IB = 30µA IB = 20µA 2 IB = 10µA 10 0 2 4 6 8 1 10 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 f=1MHz IE=0 IC=10IB VBE(sat) Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0 1 VCE(sat) 0.1 0.01 0.1 1 1 0.1 10 1 IC[mA], COLLECTOR CURRENT 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 Figure 4. Collector Output Capacitance 1000 100 0.1 1 10 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 KSC1730 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1