KSC815 KSC815 Low Frequency Amplifier & High Frequency Oscillator • Collector-Base Voltage : VCBO=60V • Complement to KSA539 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO VEBO Collector-Emitter Voltage 45 V Emitter-Base Voltage 5 IC V Collector Current 200 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 60 BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 45 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=45V, IE=0 Typ. Max. Units V V V 0.1 µA 0.1 µA IEBO Emitter Cut-off Current VEB=3V, IC=0 hFE DC Current Gain VCE=1V, IC=50mA 40 VBE (on) Base-Emitter On Voltage VCE=10V, IC=10mA 0.6 0.65 0.9 VCE (sat) Collector-Emitter Saturation Voltage IC=150mA, IB=15mA 0.15 0.4 V VBE (sat) Base-Emitter Saturation Voltage IC=150mA, IB=15mA 0.83 1.1 V fT Current Gain Bandwidth Product VCE=10V, IC=10mA Cob Output Capacitance VCB=10V, IE=0, f=1MHz 100 400 V 200 MHz 4 pF hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC815 Typical Characteristics 100 10000 IB = 300µA 80 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE=1V IB = 350µA 90 70 60 IB = 250µA 50 IB = 200µA IB = 150µA 40 30 IB = 100µA 20 1000 100 IB = 50µA 10 10 0 0 5 10 15 20 25 30 35 40 45 1 50 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 10 VCE=1V IC=10IB 1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 VBE(sat) 0.1 VCE(sat) 10 1 0.1 0.0 0.01 1 10 100 f = 1MHz IE=0 Cob[pF], CAPACITANCE 10 1 100 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.6 0.8 1.0 1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 0.2 1000 VCE=10V 100 10 1 10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSC815 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1