KSC2330 KSC2330 Color TV Chroma Output • Collector-Base Voltage : VCBO=300V • Current Gain Bandwidth Product : fT=50MHz (TYP.) TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 300 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 300 V IC Collector Current PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ +150 °C 7 V 100 mA Electrical Characteristics Ta=25°C unless otherwise notd Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=100µA, IE=0 Min. 300 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 300 BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 ICBO Collector Cut-off Current VCB=200V, IE=0 Typ. Max. Units V V 7 V 0.1 40 µA hFE DC Current Gain VCE=10V, IC=20mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 240 fT Current Gain Bandwidth Product VCE=30V, IC=10mA 50 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 4 pF 0.5 V hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2330 Typical Characteristics 20 1000 IB = 120µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = 10V 16 IB = 100µA 12 IB = 80µA IB = 60µA 8 IB = 40µA 4 100 10 IB = 20µA 1 0 0 20 40 60 80 100 1 120 VCE[V], COLLECTOR-EMITTER VOLTAGE 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 100 IC = 10 IB 1 f = 1MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 VBE(sat) 0.1 VCE(sat) 10 1 0.1 0.01 1 10 1 100 10 100 VCB[V], COLLECTOR BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 1.6 PC[W], POWER DISSIPATION 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o Ta[ C], AMIBIENT TEMPERATURE Figure 5. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2330 Package Dimensions TO-92L 0.70MAX. 1.00 ±0.10 1.70 ±0.20 13.50 ±0.40 8.00 ±0.20 4.90 ±0.20 0.80 ±0.10 1.00MAX. 0.50 ±0.10 1.27TYP [1.27 ±0.20] 0.45 ±0.10 3.90 ±0.20 0.45 ±0.10 3.90 ±0.20 1.45 ±0.20 2.54 TYP Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1