TSH690 40MHz to 1GHz AMPLIFIER .. .. . .. . 1.5V to 5V OPERATING VOLTAGE 28dB GAIN @ 3V @ 450MHz 20dB GAIN @ 3V @ 900MHz +13.5dBm OUTPUT POWER (P1dB) BIAS PIN FOR CURRENT ADJUST & AMPLIFIER DISABLE ADJUSTABLE OUTPUT POWER 50Ω INPUT/OUTPUT MATCHING FULLY GUARANTEED AT 2.7V D SO8 (Plastic Micropackage) DESCRIPTION TSH690 is a wide band RF amplifier, consisted of 2 stages, designed in advanced bipolar process featuring 28dB gain and +13.5dBm output power at 450MHz under 3V. The pin 8 allows an external bias current adjust to tune the output power and also to set the amplifier in power-down mode. This powerful amplifier is dedicated to equip secured RF data transmitters as antenna drivers in ISM band (reliable RF meter-reading systems, secured Remote Controls, Cordless Telephones, ...) ORDER CODES Part Number Temperature Range o -40, +85 C TSH690ID Package D • PIN CONNECTIONS (top view) RF out 1 GND 2 September 1998 8 Vbias 7 VCC GND 3 6 GND 4 5 RF in GND 1/10 TSH690 SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCC1, VCC2, Vbias RF in RF out Toper Tstg Parameter Supply Voltages & Bias Voltage RF Input Power RF Output Power Operating Free Air Temperature Range Storage Temperature Range Value 5.5 +10 +21 -40 to +85 -65 to +150 Unit V dBm dBm o C o C OPERATING CONDITIONS Symbol VCC1, VCC2 Vbias RFsr Parameter Supply Voltages Bias Voltage RF Signal Range Value 1.5 to 5 0 to 6 40 to 1000 ESD SENSITIVE DEVICE Handling Precautions Required 2/10 Unit V V MHz TSH690 ELECTRICAL CHARACTERISTICS T amb = 25oC, VCC & Vbias = +2.7V, ZL = 50Ω TSH690 Parameter Min. Typ. Supply Current 40 46 S21 (Vin = -20dBm, f = 450MHz) 20 23 S21 (Vin = -20dBm, f = 900MHz) Unit Max. mA 30 dB 17 dB Output Power 1dB Compression (f = 450MHz) 8 12 dBm 3rd Order Intercept Point (f = 430MHz) 16 22 dBm -46 dB S12 (Reverse Isolation @ f = 400MHz) S11 (Input Return Loss @ f = 450MHz) -15 dB S11 (Input Return Loss @ f = 900MHz) -10 -10 dB Noise Figure @ f = 450MHz 4.5 dB Noise Figure @ f = 900MHz 5.4 Rth(j-a) Junction Ambient Thermal Resistance For SO8 Package dB 140 180 o C/W All parameters with min. or max. figures are 100% tested. SO8 PACKAGE THERMAL RESISTIVITY Tamb (°C) 150 Rthmin 135 Rthmax 120 DEVICE OVERSTRESSED 105 90 75 60 RIGHT BEHAVIOUR 45 30 1 2 3 4 5 6 Vcc (V) DEFINITION Rth(j-a) Junction Ambient Thermal Resistance Maximum Die Junction Temperature Tj (oC) (~ 150oC) o Tamb ( C) Ambient Temperature Pd (W) Maximum Dissipated Power (Pd = 0.75 VCC • ICC) REMARKS The right behaviour is obtained when the following equation is fulfilled. Tj - Tamb = Pd • Rth(j-a) 3/10 TSH690 TYPICAL SCATTERING PARAMETERS (Reference waves planes at package leads) TEST CONDITIONS VCC1, VCC2, Vbias = +2V, Pin = -40dBm, T amb = 25oC Freq S11 S21 S12 S22 MHz Mag Ang Mag Ang Mag Ang Mag Ang 40 0.642 -22.0 6.319 5.0 0.003 -126.5 0.715 -54.7 -64.7 50 0.615 -25.7 6.406 7.1 0.008 170.7 0.631 100 0.537 -41.3 7.643 7.7 0.002 70.1 0.369 -91.3 150 0.490 -55.6 9.353 3.1 0.004 -141.9 0.253 -100.9 200 0.464 -68.0 11.502 -5.7 0.007 -117.3 0.202 -100.9 250 0.428 -79.0 13.856 -18.0 0.003 162.3 0.203 -92.7 300 0.413 -92.1 16.229 -33.4 0.005 142.1 0.209 -87.6 350 0.373 -101.5 18.019 -51.2 0.008 101.4 0.263 -89.4 400 0.334 -106.7 19.110 -70.1 0.008 115.2 0.326 -99.7 450 0.312 -111.5 19.159 -90.3 0.008 169.9 0.382 -112.1 500 0.290 -112.5 18.154 -108.0 0.008 111.5 0.395 -122.9 550 0.302 -114.5 16.778 -124.8 0.010 92.1 0.425 -130.0 600 0.324 -118.2 15.075 -140.5 0.015 93.6 0.424 -139.6 650 0.335 -122.9 13.482 -153.6 0.011 109.6 0.427 -150.8 700 0.349 -129.6 11.992 -165.5 0.011 101.7 0.425 -159.0 750 0.368 -135.0 10.750 -177.2 0.019 82.4 0.414 -169.5 800 0.366 -142.1 9.453 173.4 0.011 79.5 0.413 -177.8 850 0.373 -147.9 8.598 165.0 0.015 60.2 0.432 176.2 900 0.374 -154.1 7.783 155.8 0.013 89.7 0.438 166.4 950 0.381 -159.0 7.117 146.7 0.017 111.3 0.447 160.8 1000 0.377 -165.8 6.500 138.9 0.013 82.2 0.462 155.1 4/10 TSH690 TEST CONDITIONS VCC1, VCC2, Vbias = +3V, Pin = -40dBm, T amb = 25oC Freq MHz 40 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 Mag 0.616 0.595 0.513 0.470 0.436 0.402 0.382 0.343 0.302 0.279 0.271 0.280 0.306 0.315 0.330 0.333 0.343 0.346 0.354 0.347 0.355 S21 Ang -23.3 -27.0 -43.4 -57.7 -71.1 -82.2 -95.0 -103.3 -109.7 -114.8 -114.0 -116.1 -119.8 -125.5 -131.1 -136.2 -142.5 -148.0 -155.1 -159.6 -166.2 Mag 9.237 9.402 11.263 13.566 16.434 19.416 22.265 24.337 25.564 25.594 24.292 22.527 20.511 18.282 16.311 14.604 12.860 11.668 10.579 9.652 8.775 S12 Ang 6.2 7.9 6.5 0.9 -8.6 -21.3 -36.6 -53.7 -71.8 -91.2 -108.3 -124.7 -140.1 -153.2 -165.1 -177.1 173.6 165.1 156.0 147.0 139.2 Mag 0.002 0.005 0.006 0.006 0.007 0.007 0.005 0.008 0.010 0.008 0.011 0.013 0.005 0.006 0.007 0.012 0.017 0.014 0.018 0.013 0.018 S22 Ang -135.8 -169.5 -153.8 94.5 155.8 154.1 7.2 40.6 125.9 167.1 120.2 101.0 89.9 107.2 78.9 84.5 76.0 90.8 75.6 66.6 75.3 Mag 0.733 0.651 0.381 0.227 0.156 0.134 0.135 0.193 0.269 0.316 0.356 0.396 0.404 0.400 0.406 0.398 0.399 0.411 0.413 0.439 0.459 Ang -56.9 -67.7 -101.7 -119.1 -117.5 -100.3 -75.7 -78.0 -86.1 -100.6 -111.0 -119.3 -131.3 -142.6 -151.6 -160.4 -170.5 -178.8 170.9 165.2 157.3 TEST CONDITIONS VCC1, VCC2, Vbias = +4V, Pin = -40dBm, Tamb = 25oC Freq MHz 40 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 Mag 0.614 0.590 0.508 0.465 0.429 0.396 0.371 0.335 0.295 0.275 0.265 0.282 0.296 0.314 0.321 0.334 0.339 0.348 0.340 0.352 0.341 S21 Ang -23.1 -27.4 -44.6 -59.9 -72.0 -83.4 -94.7 -103.8 -109.9 -114.8 -114.8 -117.0 -120.3 -124.7 -131.5 -135.8 -143.8 -149.4 -157.5 -161.0 -166.8 Mag 11.023 11.248 13.262 15.736 18.727 21.837 24.804 26.854 28.077 28.113 26.710 24.831 22.620 20.235 18.081 16.178 14.235 12.941 11.693 10.670 9.683 S12 Ang 6.9 7.9 4.5 -2.0 -11.5 -24.2 -39.3 -56.0 -73.6 -92.5 -109.4 -125.5 -140.8 -154.1 -166.2 -178.0 172.5 164.1 154.9 145.7 137.6 Mag 0.002 0.003 0.004 0.006 0.003 0.002 0.009 0.006 0.003 0.010 0.007 0.007 0.007 0.005 0.010 0.012 0.010 0.014 0.014 0.006 0.016 S22 Ang 107.6 -111.3 -47.0 -62.5 97.7 -135.5 154.7 135.2 139.7 97.0 111.8 93.8 110.0 85.1 93.2 106.1 74.1 57.9 80.2 87.4 50.0 Mag 0.726 0.646 0.366 0.206 0.130 0.108 0.136 0.191 0.262 0.321 0.335 0.389 0.393 0.402 0.388 0.390 0.377 0.392 0.402 0.409 0.433 Ang -54.4 -65.1 -97.6 -110.4 -104.3 -78.6 -56.7 -64.3 -75.2 -85.8 -98.2 -108.5 -121.0 -131.7 -143.9 -153.8 -162.4 -170.4 179.5 171.4 163.3 5/10 TSH690 Figure 1 : Typical 300MHz-1000MHz Biasing Circuit APPLICATIONS INFORMATION CIRCUIT DESCRIPTION The TSH690 is 50Ω input/outputinternallymatched from 300MHz to 1000MHz. Due to its open-collector structure, the output RF port must be tied to Vcc2. The pin 8 allows a bias current adjust to set the output power and the gain. The circuit is packaged in SO8 for thermal dissipation considerations. (Vbias pin) which enables the trimming of the RF output power (AB class Amplifier) by tuning a series variable resistor (Rbias). MATCHING For higher supply voltage than 4V to reach high output power, the serial resistor (R1) is strongly recommended to increase the efficiency of the amplifier and therefore reduce the thermal dissipation of the circuit. Within the 300-1000MHz band, although the circuit is matched, the output return loss can be improved by adding a serial inductor (L2) between the RF output and VCC2 (56nH @ 450MHz and 10nH @ 900MHz). Below 300MHz, using the S-parameters matrix, specific input/outpu t matching networks can be calculated to maximize electrical performances. DC BLOCKING Because input/output are respectively internal/external biased, DC blocks (C1, C2) are recommended on both RF ports to guarantee a DC isolation from the next cells. Above 500MHz, 100pF is suggested whereas below, 1nF is better and far below (less than 100MHz), 10nF is prefered. BIASING The amplifier can operate in the range of 1.5V to 5V and offers a bias current adjust function 6/10 When Vbias is wired to the Vcc rail, the current consumption is maximized getting the best linearity (A class Amplifier) whereas biasing to Ground, the IC is set in power down mode. DECOUPLING As with any RF devices, the supply voltage decoupling must be done carefully using a 1nF bypass capacitor (C3, C5) placed as close as possible to the device pins and could be also improved by adding a 150nH RF choke inductance (L1). Concerning the Vbias pin, a 10nF decoupling capacitor (C4) is recommended while placing on board is not critical. Note that Surface Mounted Devices (SMD) components are prefered for RF applications due to the right behaviour in high frequencies while low inductor values (few 10nH) can be printed on board. TSH690 GAIN vs FREQUENCY (450MHz) GAIN vs FREQUENCY (900MHz) 30 30 -40°C -40°C +25°C V +85°C +25°C V +85°C 25 Gain (dB) Gain (dB) 25 20 15 20 15 L2 =10nH (900MHz Operation) Vcc=Vbias=3V L2 =10nH (450MHz Operation) Vcc=Vbias=3V 10 100 200 300 400 500 600 Freq (MHz) 700 800 900 10 100 1000 INPUT RETURN LOSS (450MHz) 0 -5 -5 S11 (dB) 3V S11 (dB) 2V 300 400 500 600 Freq (MHz) 700 800 900 1000 900 1000 900 1000 INPUT RETURN LOSS (900MHz) 0 -10 200 -15 2V -10 3V -15 4V 4V -20 -25 100 -20 Vcc=Vbias @ Ta=+ 25°C L2=56nH (450MHz operation) 200 300 400 500 600 Freq (MHz) 700 800 900 -25 100 1000 OUTPUT RETURN LOSS (450MHz) Vcc=Vbias @ Ta=+25°C L2 =10nH (900MHz operation) 200 300 400 500 600 Freq (MHz) 700 800 OUTPUT RETURN LOSS (900MHz) 0 0 -5 3V -5 3V 2V 2V S22 (dB) S22 (dB) -10 4V -15 -10 -20 -20 Vcc=Vbias @ Ta=+ 25°C L2=56nH (450MHz operation) -25 100 4V -15 200 300 400 500 600 Freq (MHz) 700 800 900 Vcc=Vbias @ Ta=+25°C L2=10nH (900MHz operation) 1000 -25 100 200 300 400 500 600 Freq (MHz) 700 800 7/10 TSH690 REVERSE ISOLATION vs FREQUENCY 1dB COMPRESSION vs BIAS VOLTAGE 20 0 -10 15 Vcc = 4V -30 P1dB (dBm) S12 (dB) -20 L2=56nH L2=10nH Vcc = 3V 10 -40 Vcc = 2V 5 -50 Vcc=Vbias=3V Ta=+25°C -60 100 200 300 400 500 600 Freq (MHz) 700 800 Ta=25°C L2 =10nH (900MHz operation) 900 0 1,5 1000 2 2,5 3 3,5 4 Vbias (V) ADMISSION (900MHz) SUPPLY CURRENT vs BIAS VOLTAGE 6 60 20 Icc total 15 4 10 +25°C 5 I bias 2 20 -40°C Vcc=Vbias=3V L2 =10nH (900MHz operation) 0 -20 8/10 I bias (mA) Icc total (mA) Pout (dBm) 40 +85°C -15 -10 Pin (dBm) -5 Vcc=3V, Ta=+25°C Pin = -40dBm 0 0 0 0 0,5 1 1,5 Vbias (V) 2 2,5 3 TSH690 DEMONSTRATION BOARD : Diagram for 300MHz - 1000MHz operation DEMONSTRATION BOARD : Silk Screen DEMONSTRATION BOARD : Printed Circuit Board (available on request) 9/10 TSH690 PM-SO16.EPS PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dim. Millimeters Typ. 0.1 0.65 0.35 0.19 0.25 Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 Min. Inches Typ. 0.026 0.014 0.007 0.010 Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 o 45 (typ.) 5.0 6.2 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 o 8 (max.) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publ ication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 10/10 SO16.TBL 4.8 5.8 ORDER CODE : A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min.