NJM2278 300/400MHz Band 20mW Power Amplifier ! ! PACKAGE OUTLINE GENERAL DESCRIPTION The NJM2278 is a narrow band, small signal amplifier, especially designed for use as the final RF amplifier in 300MHz / 400MHz band transmitter. The amplifier produces an output power of up to 20mW at the desired frequency, which frequency and power are adjusted by external input and output matching circuits. It also features excellent thermal stability of power gain. NJM2278F1 ! APPLICATIONS 300/400MHz Band Applications, 400MHz Industrial Radios, Digital Communication Systems ! FEATURES (@400MHz, 2.7V) # # # # # # # # # # # ! Low Operating Voltage 2V to 5.5V Low Operating Current 20 mA @ 0dBm input Power Gain 17dB @ - 30dBm input 13dB @0dBm input Saturation Output 14dBm @3dBm input Variable Power Gain Control 4dB Excellent Power Gain Thermal Stability Gain Flatness ±1dB (- 40°C to + 85°C) RF IN Input Impedance 70 Ω RF OUT Output Impedance 110 Ω Recommended Operating Frequency 300MHz to 500MHz Bipolar Technology Package Outline SOT23-6 (MTP6) 2.8mm x 2.9mm Note: For the signals at frequencies other than recommended operating frequency range of 300 to 500MHz, please refer to the “TYPICAL CHARACTERISTICS”. PIN CONFIGULATION Orientation Mark 1 6 2 5 3 4 Pin Function 1. RF IN 2. GND 3. EMI 4. RF OUT 5. V+ 6. IREF Top View ! Function Block Diagram RF IN IREF 1 6 GND 2 EMI 3 Ver.2008-08-22 V+ Bias Regulator 5 RF OUT 4 -1- NJM2278 ! ABSOLUTE MAXIMUM RATINGS PARAMETER (Ta=25°C) SYMBOL RATINGS UNIT Supply Voltage V+ 6.5 V Power Dissipation PD 200 mW Pinmax 6 dBm Ta - 40 to + 85 °C Tstg - 40 to +125 °C RF Input Level Operating Temperature Storage Temperature ! RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage ! SYMBOL TEST CONDITIONS V+ (Ta=25°C) MIN. TYP. MAX. UNIT 2.0 2.7 5.5 V MIN. TYP. MAX. UNIT ELECTRICAL CHARACTERISTICS (Ta=25°C, V+=2.7V, fin=400MHz, Pin=0dBm unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Operating Current 1 I c c1 No signal, Test circuit1 - 6 - mA Operating Current 2 Icc2 Test circuit1 - 20 24 mA Power Gain 1 PG1 Pin= - 30dBm,Test circuit1 - 17.5 - dB Power Gain 2 PG2 Pin= 0dBm, Test circuit1 - 13.5 - dB PGsat Pin= 3dBm, Test circuit1 - 14.5 - dBm NF Test Circuit2 - 3 - dB Input Return Loss l S 11l2 Test Circuit3 - -13 - dB Output Return Loss l S 22l 2 Test Circuit3 - -5 - dB ISL Test Circuit3 - - 27 - dB P–1dB Test Circuit1 - -9 - dBm Zin Test Circuit3 - 70 - Ω Z out Test Circuit3 - 110 - Ω - - 2.8 - dB - - 4.3 - dB Saturation Output Noise Figure RF OUT - RF IN Isolation Power Input at 1dB Compression Point Input Impedance Output Impedance Gain Flatness PGfreq Gain Control Rang PGrang fin =300 to 500MHz 400MHz standard Test Circuit3 Rref=0 to 100Ω Test Circuit4 ! REFERENCE (Thermal Characteristics) PARAMETER Gain Variation Over Temperature Ver.2008-08-22 SYMBOL PG temp TEST CONDITIONS Ta= - 40 to 85°C Test Circuit1 MIN. TYP. MAX. UNIT -1 0 +1 dB -2- NJM2278 ! TEST CIRCUIT These test circuits allow the measurement of all parameters described in “ELECTRICAL CHARACTERISTICS”. # Test Circuit 1 for Icc1, Icc2, PG1, PG2, PGsat, P-1dB, PGtemp V+ C7 1000p L1 C1 RF IN RF IN IREF 1 6 GND V+ C6 1000p L2 24n 1000p 2 SG Z=50 Bias C2 6.8p Regulator 22n 5 RF OUT EMI 3 C3 4 RF OUT 11p C4 Spectrum 4.3p Analyzer Z=50 # Test Circuit 2 for NF Noise Source NF Meter V+ C7 1000p L1 C1 RF IN RF IN IREF 1 6 GND V+ C6 1000p L2 24n 1000p 2 Bias C2 6.8p EMI 3 Regulator 22n 5 RF OUT C3 4 RF OUT 11p C4 4.3p Ver.2008-08-22 -3- NJM2278 # Test Circuit 3 for lS11l2 , lS22l2, ISL, Zin, Zout, PGfreg Port1 Netw ork Analyzer Port2 V+ Z=50 C7 1000p L1 C1 RF IN RF IN IREF 1 6 GND V+ C6 1000p L2 24n 1000p 2 Bias C2 6.8p Regulator 22n 5 RF OUT EMI 3 C3 4 RF OUT 11p C4 4.3p # Test Circuit 4 for PGrang C7 1000p L1 C1 RF IN RF IN IREF 1 6 GND V+ C6 1000p 24n 1000p 2 SG Z=50 Bias C2 6.8p EMI 3 Regulator 5 RF OUT Rref 0 to 100 L2 22n C5 1000p C3 4 RF OUT 11p C4 Spectrum 4.3p Analyzer Z=50 Ver.2008-08-22 -4- NJM2278 # Test Circuit 5 for S-Parameters (this item is not specified in “ELECTRICAL CHARACTERISTICS”) Port1 Netw ork Analyzer Port2 V+ Z=50 C7 1000p RF IN RF IN IREF 1 6 GND V+ 2 Bias EMI 3 Ver.2008-08-22 C6 1000p Regulator 5 RF OUT 4 RF OUT -5- NJM2278 ! TERMINAL FUNCTION Pin No. SYMBOL 1 EQUIVARENT CIRCUIT RF IN 2 0.8V GND 3 EMI 4 RF OUT 5 V+ 6 IREF VOLTAGE 5 2 6 4 1 3 FUNCTION RF Input The typical input impedance is 70Ω@400MHz. -- Ground For best performance, keep traces physically short and connect immediately to ground plane. 0V Emitter In most applications, keep traces physically short and connect immediately to ground plane. 2.7V 2.7V 0.8V RF Output This is an unmatched collector output of the final amplifier. The typical output impedance is 110Ω @400MHz. The external matching circuit is connected to present the optimum load impedance for maximum power and efficiency. An additional circuit of a bias inductor and series resistor provides DC bias. This resistor also serves to control the power gain by adjusting collector current. Supply Voltage An external bypassing capacitance of 0.1uF is recommended. Reference of Current Source An external decoupling capacitor is placed between this pin and ground, and placed as close as possible to this pin. Note: 1. DC voltage of each pin is measured under the following condition Ta=25°C, V+=2.7V, no RF signal input, test circuit1 2. ESD protection diode exist between each of the following pins and V+ pin 1, 3, 6 3. ESD protection diode exist between each of the following pins and ground pin 1, 3, 4, 5, 6 Ver.2008-08-22 -6- NJM2278 ! EVALUATION PC BOARD The evaluation board is useful for your design and to have more understanding of the usage and performance of this device. This evaluation board is designed to have the maximum value of PG at 400MHz,and its circuit is the same as Test Circuit 4 (V+=2.7V). Note that this board is not prepared to show the recommendation of pattern and parts layout. # Circuit Diagram C7 1000p IC1 L1 RF IN C1 NJM2278 IREF 1 6 GND V+ RF IN C6 1000p V+ Rref 0 to 100 24n 1000p 2 Bias C2 6.8p Regulator 5 RF OUT EMI 3 L2 22n C5 1000p C3 4 RF OUT 11p C4 4.3p GND # List of Component Items Designation IC1 Value NJM2278 Inductor L1 L2 24nH 22nH Capacitor C1 C2 C3 C4 C5 C6 C7 1000pF 6.8pF 11pF 4.3pF 1000pF 1000pF 1000pF Potentiometer Rref 100Ω IC Ver.2008-08-22 Supplier New Japan Radio Note Murata Murata LQW18A series LQW18A series Taiyo Yuden Taiyo Yuden Taiyo Yuden Taiyo Yuden Taiyo Yuden Taiyo Yuden Taiyo Yuden GRM21 series UCN033 series UCN033 series UCN033 series GRM21 series GRM21 series GRM21 series Murata PVG3A101C01 -7- NJM2278 # PC Board Circuit Side View V+ GND Rref C7 C5 C6 L2 C3 IC1 RF IN C2 L1 C4 RF OUT C1 Ground Side View Ver.2008-08-22 -8- NJM2278 ! TYPICAL CHARACTERISTICS ( Ta=25°C, V+=2.7V, unless otherwise noted ) Operating Current Icc1 versus Supply Voltage V+ Circuit 1, no signal 10 10 9 Circuit 1, no signal 9 85°C 8 5.5V 8 7 25°C 7 6 - 40°C 6 Icc1[mA] Icc1[mA] Operating Current Icc1 versus Amibient Temperature Ta 5 4 2V 5 4 3 3 2 2 1 1 0 2.7V 0 0 1 2 3 4 5 6 7 -50 -25 0 25 V+ [V] 25 85°C 23 125 Circuit 1, Pin=0dBm 5.5V 24 23 25°C 22 22 - 40°C 21 Icc2[mA] Icc2[mA] 100 Operating Current Icc2 versus Ambient Temperature Ta Circuit 1, Pin=0dBm 24 20 19 21 2.7V 20 19 18 18 17 17 16 16 15 2V 15 1 2 3 4 5 6 7 -50 -25 0 V+[V] 23 22 22 21 21 20 PG1[dB] 85°C - 40°C 17 75 100 125 Circuit 1, Pin= -30dBm 20 25°C 19 18 50 Power Gain PG1 versus Ambient Temperature Ta Circuit 1, Pin= -30dBm 23 25 Ta[°C] Power Gain PG1 versus Supply VoltageV+ PG1[dB] 75 Ta [°C] Operating Current Icc2 versus Supply Voltage V+ 25 50 2.7V 18 17 16 16 15 15 14 14 13 5.5V 19 2V 13 1 2 3 4 V+[V] Ver.2008-08-22 5 6 7 -50 -25 0 25 50 75 100 125 Ta[°C] -9- NJM2278 Power Gain PG2 versus Supply Voltage V+ Power Gain PG2 versus Ambient Temperature Ta Circuit 1, Pin= 0dBm 18 18 - 40°C 17 17 16 15 14 PG2[dB] PG2[dB] 5.5V 16 25°C 85°C 15 Circuit 1, Pin= 0dBm 13 12 14 2.7V 13 2V 12 11 11 10 10 9 9 8 8 1 2 3 4 5 6 7 -50 -25 0 V+[V] 20 - 40°C 100 125 17 PGsat[dBm] 85°C 16 15 14 16 15 2.7V 14 13 13 12 12 11 11 10 5.5V 18 25°C 17 Circuit 1, Pin= 3dBm 19 18 2V 10 1 2 3 4 5 6 7 -50 -25 0 V+[V] 50 75 100 125 Noise Figure NF versus Ambient Temperature Ta Circuit 2 5 25 Ta[°C] Noise Figure NF versus Supply Voltage V+ 5 Circuit 2 4 4 5.5V 85°C 25°C 3 NF[dB] NF[dB] 75 Saturation Output PGsat versus Ambient Temperature Ta Circuit 1, Pin= 3dBm 19 PGsat[dBm] 50 Ta[°C] Saturation Output PGsat versus Supply Voltage V+ 20 25 - 40°C 2 1 2.7V 3 2V 2 1 0 0 1 2 3 4 V+[V] Ver.2008-08-22 5 6 7 -50 -25 0 25 50 75 100 125 Ta[°C] - 10 - NJM2278 2 Output Return Loss S|22|2 versus Frequency fin Circuit 3, Pin= 0dBm 0 Input Return Loss S|11| versus Frequency fin Circuit 3, Pin= 0dBm - 40°C 85°C -5 -10 25°C - 40°C -15 25°C 85°C -10 2 2 S|11| [dB] -5 |S22| [dB] 0 -15 -20 -20 -25 -25 -30 300 325 350 375 400 425 450 475 500 -30 300 325 350 375 400 425 450 475 500 fin [MHz] fin [MHz] RF OUT - RF IN Isolation ISL versus Frequency fin Circuit 3, Pin= 0dBm Circuit 3, Pin= 0dBm 0 -5 -5 -10 -10 ISL [dB] ISL [dB] 0 RF OUT - RF IN Isolation ISL versus Ambient Temperature Ta -15 -20 -15 -20 85°C -25 -25 25°C - 40°C -30 300 325 350 375 400 425 450 475 500 -30 -50 -25 fin [MHz] 20 - 40°C Pout [dBm] Pout [dBm] 0 -5 -10 -10 -20 -25 -25 Pin [dBm] Ver.2008-08-22 0 10 2.7V 2V -5 -20 -10 5.5V 0 -15 -20 125 Circuit 1 5 -15 -30 100 10 25°C 85°C -40 75 15 10 5 50 Output Power Pout versus Input Power Pin Circuit 1 15 25 Ta[°C] Output Power Pout versus Input Power Pin 20 0 -40 -30 -20 -10 0 10 Pin [dBm] - 11 - NJM2278 Power Gain PGfreq versus Frequency fin 20 Output Power PGrang versus External Resistor Rref Circuit 3, Pin= 0dBm 20 18 19 16 PGfreq [dB] 17 16 15 - 40°C 14 25°C 13 PGrang [dBm] 18 14 5.5V 12 10 8 6 2.7V 4 12 85°C 11 10 300 325 350 375 400 425 450 475 500 fin [MHz] Ver.2008-08-22 Circuit 4, Pin= 0dBm 2 2V 0 0 50 100 150 200 250 300 Rref [Ω] - 12 - NJM2278 ! Impedance (reference) (Ta=25°C, V+=2.7V) RF IN Input Impedance Zin(Circuit 3, Pin=0dBm) RF OUT Output Impedance Zout(Circuit 3, Pin=0dBm) +j50 +j50 +j100 +j25 +j100 +j25 300MHz 400zMHz 300MHz 0 25 0 150 50 25 150 50 400MHz 500MHz 500MHz -j25 -j25 -j100 -j100 -j50 -j50 S11(Circuit 5, Pin= -10dBm) S22(Circuit 5, Pin= -10dBm) +j50 +j25 +j50 +j100 1000MHz 0 25 50 10MHz 800MHz 600MHz +j25 ∞ 0 25 50MHz 100MHz +j100 10MHz 50MHz 100MHz 50 1000MHz 600MHz 200MHz 800MHz 400MHz -j100 -j25 -j50 200MHz 400MHz -j100 -j25 -j50 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. Ver.2008-08-22 - 13 -