STMICROELECTRONICS TSH691

TSH691

LOW COST 40MHz - 1GHz AMPLIFIER
..
.
.
28dB GAIN @ 3V @ 450MHz
+13.5dBm OUTPUT POWER (P1dB)
BIAS PIN FOR OUTPUT POWER & AMPLIFIER DISABLE
50Ω INPUT/OUTPUT MATCHING
D
SO8
(Plastic Micropackage)
DESCRIPTION
TSH691 is a low cost RF amplifier consisted of 2
stages, designed in advanced bipolar process, featuring high performances. An external bias current
adjust allows to tune the output power and also to
set the amplifier in power-down mode. The TSH691
is intended to RF consumer equipments in ISM
band (remote controls, ASK transmitters) where
cost is sensitive
ORDER CODES
Part Number
Temperature Range
o
-35, +85 C
TSH691ID
Package
D
•
PIN CONNECTIONS (top view)
RF out
1
GND 2
June 1998
8
Vbias
7 VCC
GND
3
6
GND
4
5 RF in
GND
1/10
TSH691
SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC1, VCC2, Vbias
RF in
RF out
Toper
Tstg
Parameter
Supply Voltages & Bias Voltage
RF Input Power
RF Output Power
Operating Free Air Temperature Range
Storage Temperature Range
Value
5.5
+10
+21
-35 to +85
-65 to +150
Unit
V
dBm
dBm
o
C
o
C
OPERATING CONDITIONS
Symbol
VCC1, VCC2, Vbias
Vbias
RFsr
Parameter
Supply Voltages
Bias Voltage
RF Signal Range
Value
1.5 to 5
0 to 6
40 to 1000
ESD SENSITIVE DEVICE
Handling Precautions Required
2/10
Unit
V
V
MHz
TSH691
ELECTRICAL CHARACTERISTICS
T amb = 25oC, VCC & Vbias = +2.7V, ZL = 50Ω
TSH691
Parameter
Min.
Typ.
20
23
Supply Current
Unit
Max.
46
S21 (Vin = -20dBm, f = 450MHz)
mA
30
dB
S21 (Vin = -20dBm, f = 900MHz)
17
dB
Output Power 1dB Compression (f = 450MHz)
12
dBm
3rd Order Intercept Point (f = 430MHz)
22
dBm
S12 (Reverse Isolation @ f = 400MHz)
-46
dB
S11 (Input Return Loss @ f = 450MHz)
-15
dB
S11 (Input Return Loss @ f = 900MHz)
-10
dB
Noise Figure @ f = 450MHz
4.5
dB
Noise Figure @ f = 900MHz
5.4
Rth(j-a) Junction Ambient Thermal Resistance For SO8 Package
dB
140
180
o
C/W
All parameters with min. or max. figures are 100% tested.
SO8 PACKAGE THERMAL RESISTIVITY
Tamb (°C)
150
Rthmin
135
Rthmax
120
DEVICE
OVERSTRESSED
105
90
75
60
RIGHT BEHAVIOUR
45
30
1
2
3
4
5
6
Vcc (V)
DEFINITION
Rth(j-a)
Junction Ambient Thermal Resistance
Maximum Die Juntion Temperature
Tj (oC)
(~ 150oC)
o
Tamb ( C) Ambient Temperature
Pd (W)
Maximum Dissipated Power
(Pd = 0.75 VCC • ICC)
REMARKS
The right behaviour is obtained when the following equation is fulfilled.
Tj - Tamb = Pd • Rth(j-a)
3/10
TSH691
TYPICAL SCATTERING PARAMETERS (Reference waves planes at package leads)
TEST CONDITIONS VCC1, VCC2, Vbias = +2V, Pin = -40dBm, T amb = 25oC
Freq
S11
S21
S12
S22
MHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
40
0.642
-22.0
6.319
5.0
0.003
-126.5
0.715
-54.7
-64.7
50
0.615
-25.7
6.406
7.1
0.008
170.7
0.631
100
0.537
-41.3
7.643
7.7
0.002
70.1
0.369
-91.3
150
0.490
-55.6
9.353
3.1
0.004
-141.9
0.253
-100.9
200
0.464
-68.0
11.502
-5.7
0.007
-117.3
0.202
-100.9
250
0.428
-79.0
13.856
-18.0
0.003
162.3
0.203
-92.7
300
0.413
-92.1
16.229
-33.4
0.005
142.1
0.209
-87.6
350
0.373
-101.5
18.019
-51.2
0.008
101.4
0.263
-89.4
400
0.334
-106.7
19.110
-70.1
0.008
115.2
0.326
-99.7
450
0.312
-111.5
19.159
-90.3
0.008
169.9
0.382
-112.1
500
0.290
-112.5
18.154
-108.0
0.008
111.5
0.395
-122.9
550
0.302
-114.5
16.778
-124.8
0.010
92.1
0.425
-130.0
600
0.324
-118.2
15.075
-140.5
0.015
93.6
0.424
-139.6
650
0.335
-122.9
13.482
-153.6
0.011
109.6
0.427
-150.8
700
0.349
-129.6
11.992
-165.5
0.011
101.7
0.425
-159.0
750
0.368
-135.0
10.750
-177.2
0.019
82.4
0.414
-169.5
800
0.366
-142.1
9.453
173.4
0.011
79.5
0.413
-177.8
850
0.373
-147.9
8.598
165.0
0.015
60.2
0.432
176.2
900
0.374
-154.1
7.783
155.8
0.013
89.7
0.438
166.4
950
0.381
-159.0
7.117
146.7
0.017
111.3
0.447
160.8
1000
0.377
-165.8
6.500
138.9
0.013
82.2
0.462
155.1
4/10
TSH691
TEST CONDITIONS VCC1, VCC2, Vbias = +3V, Pin = -40dBm, T amb = 25oC
Freq
MHz
40
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
Mag
0.616
0.595
0.513
0.470
0.436
0.402
0.382
0.343
0.302
0.279
0.271
0.280
0.306
0.315
0.330
0.333
0.343
0.346
0.354
0.347
0.355
S21
Ang
-23.3
-27.0
-43.4
-57.7
-71.1
-82.2
-95.0
-103.3
-109.7
-114.8
-114.0
-116.1
-119.8
-125.5
-131.1
-136.2
-142.5
-148.0
-155.1
-159.6
-166.2
Mag
9.237
9.402
11.263
13.566
16.434
19.416
22.265
24.337
25.564
25.594
24.292
22.527
20.511
18.282
16.311
14.604
12.860
11.668
10.579
9.652
8.775
S12
Ang
6.2
7.9
6.5
0.9
-8.6
-21.3
-36.6
-53.7
-71.8
-91.2
-108.3
-124.7
-140.1
-153.2
-165.1
-177.1
173.6
165.1
156.0
147.0
139.2
Mag
0.002
0.005
0.006
0.006
0.007
0.007
0.005
0.008
0.010
0.008
0.011
0.013
0.005
0.006
0.007
0.012
0.017
0.014
0.018
0.013
0.018
S22
Ang
-135.8
-169.5
-153.8
94.5
155.8
154.1
7.2
40.6
125.9
167.1
120.2
101.0
89.9
107.2
78.9
84.5
76.0
90.8
75.6
66.6
75.3
Mag
0.733
0.651
0.381
0.227
0.156
0.134
0.135
0.193
0.269
0.316
0.356
0.396
0.404
0.400
0.406
0.398
0.399
0.411
0.413
0.439
0.459
Ang
-56.9
-67.7
-101.7
-119.1
-117.5
-100.3
-75.7
-78.0
-86.1
-100.6
-111.0
-119.3
-131.3
-142.6
-151.6
-160.4
-170.5
-178.8
170.9
165.2
157.3
TEST CONDITIONS VCC1, VCC2, Vbias = +4V, Pin = -40dBm, Tamb = 25oC
Freq
MHz
40
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
Mag
0.614
0.590
0.508
0.465
0.429
0.396
0.371
0.335
0.295
0.275
0.265
0.282
0.296
0.314
0.321
0.334
0.339
0.348
0.340
0.352
0.341
S21
Ang
-23.1
-27.4
-44.6
-59.9
-72.0
-83.4
-94.7
-103.8
-109.9
-114.8
-114.8
-117.0
-120.3
-124.7
-131.5
-135.8
-143.8
-149.4
-157.5
-161.0
-166.8
Mag
11.023
11.248
13.262
15.736
18.727
21.837
24.804
26.854
28.077
28.113
26.710
24.831
22.620
20.235
18.081
16.178
14.235
12.941
11.693
10.670
9.683
S12
Ang
6.9
7.9
4.5
-2.0
-11.5
-24.2
-39.3
-56.0
-73.6
-92.5
-109.4
-125.5
-140.8
-154.1
-166.2
-178.0
172.5
164.1
154.9
145.7
137.6
Mag
0.002
0.003
0.004
0.006
0.003
0.002
0.009
0.006
0.003
0.010
0.007
0.007
0.007
0.005
0.010
0.012
0.010
0.014
0.014
0.006
0.016
S22
Ang
107.6
-111.3
-47.0
-62.5
97.7
-135.5
154.7
135.2
139.7
97.0
111.8
93.8
110.0
85.1
93.2
106.1
74.1
57.9
80.2
87.4
50.0
Mag
0.726
0.646
0.366
0.206
0.130
0.108
0.136
0.191
0.262
0.321
0.335
0.389
0.393
0.402
0.388
0.390
0.377
0.392
0.402
0.409
0.433
Ang
-54.4
-65.1
-97.6
-110.4
-104.3
-78.6
-56.7
-64.3
-75.2
-85.8
-98.2
-108.5
-121.0
-131.7
-143.9
-153.8
-162.4
-170.4
179.5
171.4
163.3
5/10
TSH691
Figure 1 : Typical 300MHz-1000MHz Biasing Circuit
APPLICATIONS INFORMATION
CIRCUIT DESCRIPTION
The TSH691 is 50Ω input/outputinternallymatched
from 300MHz to 1000MHz. Due to its open-collector structure, the output RF port must be tied to
VCC2. The pin 8 allows a bias current adjust to set
the output power and the gain. The circuit is packaged in SO8 for thermal dissipation considerations.
MATCHING
Within the 300-1000MHz band, although the circuit
is matched, the output return loss can be improved
by adding a serial inductor (L2) between the RF
output and VCC2 (56nH @450MHz and 10nH
@900MHz). Below 300MHz, using the S-parameters matrix, specific input/outpu t matching networks can be calculated to maximize electrical
performances.
DC BLOCKING
Because input/output are respectively internal/external biased, DC blocks (C1, C2) are recommended on both RF ports to guarantee a DC
isolation from the next cells. Above 500MHz, 100pF
is suggested whereas below, 1nF is better and far
below (less than 100MHz), 10nF is prefered.
BIASING
The amplifier can operate in the range of 1,5V to
5V and offers a bias current adjust function (Vbias
pin) which enables the trimming of the RF output
6/10
power (AB class Amplifier) by tuning a series variable resistor (Rbias).
When Vbias is wired to the VCC rail, the current
consumptionis maximized getting the best linearity
(A class Amplifier) whereas biasing to Ground, the
IC is set in power down mode.
For higher supply voltage than 4V to reach high
output power, the serial resistor (R1) is strongly
recommended to increase the efficiency of the
amplifier and therefore reduce the thermal dissipation of the circuit.
DECOUPLING
As with any RF devices, the supply voltage decoupling must be done carefully using a 1nF bypass
capacitor (C3, C5) placed as close as possible to
the device pins and could be also improved by
adding a 150nH RF choke inductance (L1). Concerning the Vbias pin, a 10nF decoupling capacitor
(C4) is recommended while placing on board is not
critical. Note that Surface Mounted Devices (SMD)
components are prefered for RF applications due
to the right behaviour in high frequencies while low
inductor values (few 10nH) can be printed on
board.
TSH691
GAIN vs FREQUENCY (450MHz)
GAIN vs FREQUENCY (900MHz)
30
30
-35°C
-35°C
+25°C
V
+85°C
+25°C
V
+85°C
25
Gain (dB)
Gain (dB)
25
20
15
20
15
L2 =10nH (900MHz Operation)
Vcc=Vbias=3V
L2 =10nH (450MHz Operation)
Vcc=Vbias=3V
10
100
200
300
400
500
600
Freq (MHz)
700
800
900
10
100
1000
INPUT RETURN LOSS (450MHz)
0
-5
-5
S11 (dB)
3V
S11 (dB)
2V
300
400
500
600
Freq (MHz)
700
800
900
1000
900
1000
900
1000
INPUT RETURN LOSS (900MHz)
0
-10
200
-15
2V
-10
3V
-15
4V
4V
-20
-25
100
-20
Vcc=Vbias @ Ta=+ 25°C
L2=56nH (450MHz operation)
200
300
400
500
600
Freq (MHz)
700
800
900
-25
100
1000
OUTPUT RETURN LOSS (450MHz)
Vcc=Vbias @ Ta=+25°C
L2 =10nH (900MHz operation)
200
300
400
500
600
Freq (MHz)
700
800
OUTPUT RETURN LOSS (900MHz)
0
0
-5
3V
-5
3V
2V
2V
S22 (dB)
S21 (dB)
-10
4V
-15
-10
-20
-20
Vcc=Vbias @ Ta=+ 25°C
L2=56nH (450MHz operation)
-25
100
4V
-15
200
300
400
500
600
Freq (MHz)
700
800
900
Vcc=Vbias @ Ta=+25°C
L2=10nH (900MHz operation)
1000
-25
100
200
300
400
500
600
Freq (MHz)
700
800
7/10
TSH691
REVERSE ISOLATION vs FREQUENCY
1dB COMPRESSION vs BIAS VOLTAGE
20
0
-10
15
Vcc = 4V
-30
P1dB (dBm)
S12 (dB)
-20
L2=56nH
L2=10nH
Vcc = 3V
10
-40
Vcc = 2V
5
-50
Vcc=Vbias=3V
Ta=+25°C
-60
100
200
300
400
500
600
Freq (MHz)
700
800
Ta=25°C
L2 =10nH (900MHz operation)
900
0
1,5
1000
2
2,5
3
3,5
4
Vbias (V)
ADMISSION (900MHz)
SUPPLY CURRENT vs BIAS VOLTAGE
6
60
20
Icc total
15
4
10
+25°C
5
I bias
2
20
-35°C
Vcc=Vbias=3V
L2 =10nH (900MHz operation)
0
-20
8/10
I bias (mA)
Icc total (mA)
Pout (dBm)
40
+85°C
-15
-10
Pin (dBm)
-5
Vcc=3V, Ta=+25°C
Pin = -40dBm
0
0
0
0
0,5
1
1,5
Vbias (V)
2
2,5
3
TSH691
DEMONSTRATION BOARD : Diagram for 300MHz - 1000MHz operation
DEMONSTRATION BOARD : Silk Screen
DEMONSTRATION BOARD : Printed Circuit Board (available on request)
9/10
TSH691
PM-SO16.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
Min.
Millimeters
Typ.
0.1
0.65
0.35
0.19
0.25
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
Min.
Inches
Typ.
0.026
0.014
0.007
0.010
Max.
0.069
0.010
0.065
0.033
0.019
0.010
0.020
0.189
0.228
0.197
0.244
0.004
o
45 (typ.)
4.8
5.8
5.0
6.2
1.27
3.81
3.8
0.4
0.050
0.150
4.0
1.27
0.6
0.150
0.016
0.157
0.050
0.024
o
8 (max.)
SO16.TBL
Dim.
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10/10
ORDER CODE :
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