TXN/TYN 0512 ---> TXN/TYN 1012 SCR .. .. FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The TYN/TXN 0512 ---> TYN/TXN 1012 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. K A G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter Value Unit RMS on-state current (180° conduction angle) TXN TYN Tc=80°C Tc=90°C 12 A IT(AV) Average on-state current (180° conduction angle,single phase circuit) TXN TYN Tc=80°C Tc=90°C 8 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp=8.3 ms 125 A tp=10 ms 120 tp=10 ms 72 A2s 100 A/µs - 40 to + 150 - 40 to + 125 °C °C 260 °C I2 t I2 t value dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM April 1995 Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C TYN/TXN Unit 0512 112 212 412 612 812 1012 50 100 200 400 600 800 1000 V 1/5 TXN/TYN 0512 ---> TXN/TYN 1012 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Value Unit 60 °C/W TXN 3.5 °C/W TYN 2.5 Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol Value Unit IGT VD =12V (DC) R L=33Ω Tj=25°C MAX 15 mA VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V VGD VD =VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V tgt VD =VDRM IG = 40mA dIG/dt = 0.5A/µs Tj=25°C TYP 2 µs IL IG= 1.2 IGT Tj=25°C TYP 50 mA IH IT= 100mA Tj=25°C MAX 30 mA gate open VTM ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA dV/dt Linear slope up to VD=67%VDRM gate open Tj= 125°C MIN 200 V/µs VD =67%VDRM ITM= 24A VR= 25V dITM/dt=30 A/µs dVD /dt= 50V/µs Tj= 125°C TYP 70 µs tq 2/5 Test Conditions Rated Rated Tj= 125°C 3 TXN/TYN 0512 ---> TXN/TYN 1012 Fig.1 : Maximum average power dissipation versus average on-state current (TXN). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TXN). Fig.3 : Maximum average power dissipation versus average on-state current (TYN). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact (TYN). Fig.5 : Average temperature (TXN). Fig.6 : Average temperature (TYN). on-state current versus case on-state current versus case 3/5 TXN/TYN 0512 ---> TXN/TYN 1012 Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1 Zt h( j-c) 0.1 Zt h(j-a) tp( s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.11 : On-state characteristics (maximum values). 4/5 Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. TXN/TYN 0512 ---> TXN/TYN 1012 PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F O P L C M =N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Cooling method : by conduction (method C) Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5