H11AG1M Phototransistor Optocoupler Features Description ■ High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. ■ Logic level compatible, input and output currents, with CMOS and LS/TTL ■ High DC current transfer ratio at low input currents (as low as 200µA) ■ Underwriters Laboratory (UL) recognized File #E90700, Volume 2 ■ IEC 60747-5-2 approved (ordering option V) Applications ■ CMOS driven solid state reliability ■ Telephone ring detector ■ Digital logic isolation Schematic ANODE 1 6 BASE 6 1 CATHODE 2 5 COL 6 1 6 N/C 3 ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 4 EMITTER 1 www.fairchildsemi.com H11AG1M — Phototransistor Optocoupler September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Value Units TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL 260 for 10 sec °C 260 mW Derate Linearly From 25°C 3.5 mW/°C IF Continuous Forward Current 50 mA VR Reverse Voltage 6 V Forward Current – Peak (1µs pulse, 300pps) 3.0 A LED Power Dissipation 25°C Ambient 75 mW 1.0 mW/°C 150 mW Derate Linearly from 25°C 2.0 mW/°C Continuous Collector Current 50 mA PD Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ 25°C (LED plus detector) EMITTER IF(pk) PD Derate Linearly From 25°C DETECTOR PD IC Detector Power Dissipation @ 25°C ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 2 H11AG1M — Phototransistor Optocoupler Absolute Maximum Ratings Individual Component Characteristics Symbol Parameters Test Conditions Min. Typ.* Max. Units 1.25 1.5 V EMITTER VF Input Forward Voltage IF = 1mA IR Reverse Leakage Current VR = 5V, TA = 25°C 10 µA CJ Capacitance V = 0, f = 1.0MHz 100 pF BVCEO Breakdown Voltage, Collector to Emitter IC = 1.0mA, IF = 0 30 V BVCBO Collector to Base IC = 100µA, IF = 0 70 V BVECO Emitter to Collector IC = 100µA, IF = 0 7 V ICEO Leakage Current, Collector to Emitter VCE = 10V, IF = 0 5 CCE Capacitance VCE = 10V, f = 1MHz 10 DETECTOR 10 µA pF *Typical values at TA = 25°C. Isolation Characteristics Symbol Parameter Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage f = 60Hz, t = 1 sec. 7500 VACPEAK RISO Isolation Resistance VI-O = 500VDC, TA = 25°C 1011 Ω Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol Characteristics Test Conditions Min. Typ.* Max. Units DC CHARACTERISTICS CTR VCE(SAT) Current Transfer Ratio Saturation Voltage IF = 1mA, VCE = 5V 300 IF = 1mA, VCE = 0.6V 100 IF = 0.2mA, VCE = 1.5V 100 % IF = 2.0mA, IC = 0.5mA .40 V AC CHARACTERISTICS Non-Saturated Switching Times ton Turn-On Time RL = 100Ω, IF = 1mA, VCC = 5V 5 µs toff Turn-Off Time RL = 100Ω, IF = 1mA, VCC = 5V 5 µs *Typical values at TA = 25°C ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 3 H11AG1M — Phototransistor Optocoupler Electrical Characteristics (TA = 25°C unless otherwise specified.) As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 Ω RIO ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 4 H11AG1M — Phototransistor Optocoupler Safety and Insulation Ratings Figure 2. Normalized Current Transfer Ratio vs. Forward Current 1.2 1.8 1.0 NORMALIZED CTRCE VF - FORWARD VOLTAGE (V) Figure 1. LED Forward Voltage vs. Forward Current 2.0 1.6 1.4 o TA = -55 C TA = 25 oC 1.2 0.8 0.6 0.4 T A = 100 oC 1.0 NORMALIZED TO: I F = 5mA VCE = 5V o TA = 25 C 0.2 0.8 0.1 1 10 100 0.1 1 Figure 4. Normalized Collector vs. Collector - Emitter Voltage Figure 3. Normalized CTR vs. Temperature CE NORMALIZED CTR CE 1.2 NORMALIZED ICE - COLLECTOR - EMITTER CURRENT 1.6 NORMALIZED TO: I F = 5mA V = 5V I F = 10mA I F = 2mA I F = 5mA TA = 25 C o 1.0 0.8 I F = 1mA 0.6 I F = 0.5mA 0.4 I F = 0.2mA 0.2 0.0 -60 -40 -20 0 20 40 60 80 100 10 I F = 10mA 1 I F = 5mA I F = 2mA I F = 1mA 0.1 I F = 0.5mA I F = 0.2mA 0.01 NORMALIZED TO: I F = 5mA VCE = 5V TA = 25 o C 0.001 0.0001 0.1 o 1 TA - AMBIENT TEMPERATURE - C 10 VCE - COLLECTOR - EMITTER VOLTAGE - V Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current Figure 6. Normalized Collector - Base Current vs. Temperature 30 10 NORMALIZED COLLECTOR - BASE CURRENT NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT 100 IF - FORWARD CURRENT - mA I F - LED FORWARD CURRENT (mA) 1.4 10 25 20 15 10 NORMALIZED TO: I F = 5mA VCB = 5V TA = 25 o C 5 0 0 10 20 30 40 50 60 70 80 90 I F = 5mA 1 I F = 2mA I F = 1mA 0.1 I F = 0.5mA I F = 0.2mA 0.01 0.001 -60 100 NORMALIZED TO: IF = 5mA VCB = 5V o TA = 25 C -40 -20 0 20 40 60 80 100 o IF - FORWARD CURRENT - mA ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 I F = 10mA TA - AMBIENT TEMPERATURE - C www.fairchildsemi.com 5 H11AG1M — Phototransistor Optocoupler Typical Performance Curves H11AG1M — Phototransistor Optocoupler Typical Performance Curves (Continued) Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature 10000 I F = 0mA VCE = 10V ICEO - DARK CURRENT (nA) 1000 100 10 1 0.1 0 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERATURE ( oC) 3V ≤ VCC ≤ 10V 47KΩ 4093 or 74HC14 R1 H11AG1M AC INPUT VOLTAGE 1N4148 C1 4.7MΩ C2 0.1 4.7KΩ Input R1 C1 Z 40-90 VRMS 20Hz 75K 1/10W 0.1µF 100V 109K 95-135 VRMS 60Hz 180K 1/10W 12 ηF 200 V 285K 200-280 VRMS 50/60Hz 390K 1/4W 6.80 ηF 400 V 550K DC component of input voltage is ignored due to C1 Figure 8. Telephone Ring Detector/A.C. Line CMOS Input Isolator The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing requirements. ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 6 H11AG1M — Phototransistor Optocoupler Package Dimensions Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25–0.36 3.28–3.53 5.08 (Max.) 0.38 (Min.) 0.20–0.30 2.54 (Bsc) (0.86) 0.16–0.88 (8.13) 0.41–0.51 1.02–1.78 0.76–1.14 Note: All dimensions in mm. ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 7 Suffix Example Option No Suffix H11AG1M S H11AG1SM SR2 H11AG1SR2M T H11AG1TM 0.4" Lead Spacing V H11AG1VM VDE 0884 TV H11AG1TVM VDE 0884, 0.4" Lead Spacing SV H11AG1SVM VDE 0884, Surface Mount SR2V H11AG1SR2VM Standard Through Hole Device (50 units per tube) Surface Mount Lead Bend Surface Mount; Tape and Reel (1,000 units per reel) VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel) Marking Information 1 V 3 H11AG1 2 X YY Q 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 8 H11AG1M — Phototransistor Optocoupler Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Note: All dimensions are in inches (millimeters) Reflow Soldering Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 9 H11AG1M — Phototransistor Optocoupler Tape Dimensions Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.3 www.fairchildsemi.com 10 H11AG1M — Phototransistor Optocoupler TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.