U4285BM AM / FM - PLL Description The U4285BM is an integrated circuit in BICMOS technology for frequency synthesizers. It performs all the functions of a PLL radio tuning system and is controlled by an I2C bus. The device is designed for all frequency synthesizer applications in radio receivers, as well as RDS ( Radio Data System ) applications. Features D Reference oscillator up to 15 MHz D Two programmable 16 bit dividers D 4 programmable switching outputs (open drain up to 15 V) adjustable from 2 to 65535 D Few external component required due to D Fine tuning steps: AM FM y 1 kHz y 2 kHz integrated loop-push-pull stage for AM/FM D High signal/ noise ratio Ordering Information Extended Type Number U4285BM-AFS U4285BM-AFSG3 Package Remarks SSO20 plastic SSO20 plastic Taping according to IEC-286-3 Block Diagram SWO1 SWO2 SWO3 SWO4 5 6 7 8 OSCIN 18 Oscillator R-divider Switching outputs OSCOUT 14 19 SCL SDA 3 AS FMOSC PDAM 2 15 I2C bus interface 16 4 Phase detector 9 AMOSC 11 AM/FM switch 10 GND2 Current sources 17 12 13 N-divider 1 VDD 20 GND1 PDAMO VA C PDFMO PDFM 95 10120 Figure 1. TELEFUNKEN Semiconductors Rev. A3, 14-May-97 1 (10) U4285BM Pin Description VDD 1 20 GND1 SCL 2 19 OSCOUT SDA 3 18 OSCIN AS 4 17 C SWO 1 5 16 VA U4285BM SWO 2 6 15 PDAMO SWO3 7 14 PDAM SWO4 8 13 PDFM FMOSC 9 12 PDFMO GND 2 10 11 AMOSC Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol VDD SCL SDA AS SWO 1 SWO 2 SWO3 SWO4 FMOSC GND 2 AMOSC PDFMO PDFM PDAM PDAMO VA C OSCIN OSCOUT GND1 Function Supply voltage I2C bus clock I2C bus data Address selection Switching output 1 Switching output 2 Switching output 3 Switching output 4 FM oscillator input Ground 2 (analog) AM oscillator input FM analogue output FM current output AM current output AM analogue output Analogue supply voltage Capacitor Oscillator input Oscillator output Ground 1 (digital) 95 10121 Functional Description The U4285BM is controlled via the 2-wire I2C bus. For programming there are one module address byte, two subaddress bytes and five data bytes. The module address contains a programmable address bit A 1 which with address select input AS (Pin 4) makes it possible to operate two U4285BM in one system. If bit A 1 is identical with the status of the address select input AS, the chip is selected . The subaddress determines which one of the data bytes is transmitted first. If subaddress of R-divider is transmitted, the sequence of the next data bytes is DB 0 (Status), DB 1 and DB 2. If subaddress of N-divider is transmitted, the sequence of the next data bytes is DB 3 and DB 4. The bit organisation 2 (10) of the module address, subaddress and 5 data bytes are shown in figure 2. Each transmission on the I2C bus begins with the “START”- condition and has to be ended by the “STOP”condition (see figure 3). The integrated circuit U4285BM has two separate inputs for AM and FM oscillator. Pre-amplified AM and FM signals are fed to the 16 bit N-divider via AM/FM switch. AM/FM switch is controlled by software. Tuning steps can be selected by 16 bit R-divider. Further there is a digital memory phase detector. There are two separate current sources for AM and FM amplifier (charge pump) as given in electrical characterisitics. It allows independent adjustment of gain, whereby providing high current for high speed tuning and low current for stable tuning. TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Bit Organization MSB 1 1 0 0 1 0 0/1 LSB 0 A7 A6 A5 A4 A3 A2 A1 A0 Subaddress (R-divider) X X X 0 0 1 X X Subaddress (N-divider) X X X X 1 1 X X MSB SWO1 SWO2 SWO3 SWO4 D7 D6 D5 D4 AM/ FM D3 PD ANA D2 PD POL D1 LSB PD CUR D0 Module address Data byte 0 (Status) Data byte 1 215 R-divider 28 Data byte 2 27 R-divider 20 Data byte 3 215 N-divider 28 Data byte 4 27 N-divider 20 AM/FM PD – ANA PD – POL PD – CUR LOW FM-operation PD analog Negative polarity Output current 2 HIGH AM-operation TEST Positive polarity Output current 1 Figure 2. TELEFUNKEN Semiconductors Rev. A3, 14-May-97 3 (10) U4285BM Transmission Protocol MSB S LSB Address A7 A0 MSB LSB S Address A7 S = Start A Subaddress R-divider A Data 0 A Data 1 A A Subaddress N–divider A Data 3 A Data 4 A A A0 P = Stop Data 2 A P P A = Acknowledge Figure 3. Absolute Maximum Ratings Parameters Supply voltage Pin 1 Input voltage Pins 2, 3, 4, 9, 11, 18 and 19 Output current Pins 3, 5, 6, 7 and 8 Output drain voltage Pins 5, 6, 7 and 8 Analogue supply voltage Pin 16 with 220 W seriell resistance 2 minutes 1 Output current Pins 12 and 15 Ambient temperature range Storage temperature range Junction temperature Electrostatic handling (modified MIL STD 883 D method 3015.7: all supply pins connected together) 1 Symbol VDD VI IO VOD VA VA IAO Tamb Tstg Tj VESD Value –0.3 to +6 –0.3 to VDD + 0.3 –1 to +5 15 6 to 15 24 –1 to +20 –30 to +85 –40 to +125 125 1000 Unit V V mA V V V mA _C _C _C V Symbol RthJA Value 160 Unit K/W " corresponding our application circuit (page 8) Thermal Resistance Parameters Junction ambient 4 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Electrical Characteristics VDD = 5 V, VA = 10 V, Tamb = 25°C, unless otherwise specified Parameters Supply voltage Quiescent supply current Test conditions / Pin Symbol Pin 1 VDD AM-mode Pin 1 IDD FM-mode FM input sensitivity, RG = 50 W FMOSC fi = 70 to 120 MHz Pin 9 VSFM fi = 160 MHz Pin 9 VSFM AM input sensitivity, RG = 50 W AMOSC fi = 0.6 to 35 MHz Pin 11 VSAM Oscillator input sensitivity, RG = 50 W OSCIN fi = 0.1 to 15 MHz Pin 18 VSOSC Switching output SWO 1, SWO 2, SWO 3, SWO 4 (open drain) Output voltage Pins 5, 6, 7 and 8 LOW IL = 1 mA VSWOL Output leakage current Pins 5, 6, 7 and 8 HIGH V5, V6, V7, V8 = 10 V IOHL Phase detector PDFM Output current 1 Pin 13 IPDFM Output current 2 Pin 13 IPDFM Leakage current Pin 13 IPDFML Phase detector PDAM Output current 1 Pin 14 IPDAM Output current 2 Pin 14 IPDAM Leakage current Pin 14 IPDAM- " " " " " " Min. 4.5 Typ. 5.0 4.0 4.0 Max. 5.5 7.0 7.0 Unit V mA 40 150 mVrms mVrms 40 mVrms 100 mVrms 100 1600 400 160 40 2000 500 200 50 400 mV 100 nA 2400 600 20 240 60 20 mA mA nA mA mA nA L Analogue output PDFMO, PDAMO Saturation voltage Pins 12 and 15 LOW I = 15 mA HIGH I2C bus SCL, SDA, AS Input voltage Pins 2, 3 and 4 HIGH LOW Output voltage Pin 3 Acknowledge LOW ISDA = 3 mA Clock frequency Pin 2 Rise time SDA, SCL Pins 2 and 3 Fall time SDA, SCL Pins 2 and 3 Period of SCL Pin 2 HIGH HIGH LOW LOW TELEFUNKEN Semiconductors Rev. A3, 14-May-97 VsatL VsatH 9.5 200 9.95 400 mV V VDD 1.5 V V 0.4 100 1 300 V kHz ms ns ViBUS 3.0 0 VO fSCL tr tf tH tL 4.0 4.7 ms ms 5 (10) U4285BM Parameters Setup time Start condition Data Stop condition Time space 1) Hold time Start condition DATA 1) Test conditions / Pin Symbol Min. Typ. Max. Unit tsSTA tsDAT tsSTOP twSTA 4.7 250 4.7 4.7 ms thSTA thDAT 4.0 0 ms ms ns ms ms This is a space of time where the bus must be free from data transmission and before a new transmission can be started Bus Timing SDA twSTA tr tf thSTA SCL S thSTA P thDAT tL tH tsSTA tsSTOP thDAT P = Stop, S = Start P 95 10122 Figure 4. 14 12 14 T = 85°C 12 VDD = 5.5 V 5.0 V 4.5 V 8 6 6 4 2 2 40 60 80 fiFM ( MHz ) 100 0 20 120 VDD = 5.5 V 5.0 V 4.5 V 8 4 0 20 13354 10 VSFM ( mV ) VSFM ( mV ) 10 T = –30°C 13355 40 60 80 100 120 fiFM ( MHz ) Figure 5. FM input sensitivity 6 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM 100 100 10 T = –30°C VDD = 5.5 V 5.0 V 4.5 V V SAM ( mV ) V SAM ( mV ) T = 85°C 1 0.1 1.0 10.0 10 1 0.1 100.0 fiAM ( MHz ) 13353 VDD = 5.5 V 5.0 V 4.5 V 1.0 10.0 100.0 fiAM ( MHz ) 13356 Figure 6. AM input sensitivity Application Circuit 100 m 16 V 6 to 15 V 110 110 3k 100 n C1 * 27 p 100 m 6.3 V 27 p 20 18 19 17 C3 C5 16 15 AMOSC * R2* C2 * R1 * 4 MHz C6* FMOSC 2.2 n 14 13 12 11 7 8 9 10 U4285BM 100 n 1 C4 3 2 4 5 6 100 m 6.3 V 1n 27 12 k 12 k * Values depend on the step frequency and used varicaps 5V 95 10123 Figure 7. TELEFUNKEN Semiconductors Rev. A3, 14-May-97 7 (10) U4285BM Recommendations for Applications D C3 = 100 nF should be very close to Pin 1 (VDD) and D 4 MHz crystal must be very close to Pin 18 and Pin 19 D Components of the charge pump (C1/R1 for AM and Pin 20 (GND 1) C2/R2 for FM) should be very close to Pin 14 with respect to Pin 13. D GND 2 (Pin 10 – analogue ground) and GND 1 (Pin 20 – digital ground) must be connected according to figure 8 PCB-Layout GND C4 VDD C2 C1 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 C3 95 10124 Figure 8. 8 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97 U4285BM Package Information Package SSO20 5.7 5.3 Dimensions in mm 6.75 6.50 4.5 4.3 1.30 0.15 0.15 0.05 0.25 6.6 6.3 0.65 5.85 20 11 technical drawings according to DIN specifications 13007 1 TELEFUNKEN Semiconductors Rev. A3, 14-May-97 10 9 (10) U4285BM Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) TELEFUNKEN Semiconductors Rev. A3, 14-May-97