GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 Unit: mm HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed : tf = 0.20 µs (TYP.) (IC = 15 A) l Low Saturation Voltage : VCE (sat) = 1.8V (TYP.) (IC = 15A) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 900 V Gate-Emitter Voltage VGES ±25 V DC IC 15 1ms ICP 30 DC IF 15 1ms IFM 120 PC 55 Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range A A W Tj 150 °C Tstg −55~150 °C JEDEC JEITA TOSHIBA ― ― 2−16F1A Weight: 5.8 g EQUIVALENT CIRCUIT 1 2002-02-06 GT15M321 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Gate Leakage Current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector Cut−off Current ICES VCE = 900 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 15 mA, VCE = 5 V 3.0 ― 6.0 V VCE (sat) IC = 15 A, VGE = 15 V ― 1.8 2.5 V VCE = 10 V, VGE = 0, f = 1 MHz ― 1200 ― pF tr ― 0.20 ― ton ― 0.30 ― tf ― 0.20 0.40 toff ― 0.50 ― Gate-Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Cies Rise Time Turn−on Time Switching Time Fall Time Turn−off Time µs Emitter-Collector Forward Voltage VF IEC = 15 A, VGE = 0 ― 1.5 2.0 V Reverse Recovery Time trr IF = 15 A, VGE = 0 di / dt = −20 A / µs ― 0.7 2.5 ms Thermal Resistance Rth (j−c) IGBT ― ― 2.27 °C / W Thermal Resistance Rth (j−c) Diode ― ― 2.27 °C / W 2 2002-02-06 GT15M321 3 2002-02-06 GT15M321 4 2002-02-06 GT15M321 5 2002-02-06 GT15M321 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-02-06