SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm · Suitable for high-density mounting due to compact package · Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Drain current Drain power dissipation (Ta = 25°C) PD (Note) mA 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm ´ 3) JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E 0.6 mm 1.0 mm Marking Equivalent Circuit 3 3 DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2001-12-18 SSM3K16FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 ¾ ¾ ±1 mA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ¾ ¾ V IDSS VDS = 20 V, VGS = 0 ¾ ¾ 1 mA Vth VDS = 3 V, ID = 0.1 mA 0.6 ¾ 1.1 V ½Yfs½ VDS = 3 V, ID = 10 mA 40 ¾ ¾ mS ID = 10 mA, VGS = 4 V ¾ 1.5 3.0 ID = 10 mA, VGS = 2.5 V ¾ 2.2 4.0 ID = 1 mA, VGS = 1.5 V ¾ 5.2 15 RDS (ON) W Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.3 ¾ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 4.5 ¾ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 9.8 ¾ pF VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 70 ¾ ¾ 125 ¾ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (b) VIN (a) Test circuit 2.5 V OUT 2.5 V 90% 50 9 IN 0 10 ms 0V RL VDD (c) VOUT VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 1.5 V or higher to turn on this product. 2 2001-12-18 SSM3K16FU ID – VDS ID – VGS 250 1000 Common source 2.5 Common source Ta = 25°C VDS = 3 V 10 (mA) 2.3 2.1 ID 1.9 150 Drain current Drain current ID (mA) 200 4 3 1.7 100 1.5 50 100 Ta = 100°C 10 25°C -25°C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage VDS 0.01 0 2 1 (V) Gate-Source voltage RDS (ON) – ID 12 2 VGS RDS (ON) – VGS Common source Ta = 25°C ID = 10 mA 5 Drain-Source on resistance RDS (ON) (W) Drain-Source on resistance RDS (ON) (W) 10 8 VGS = 1.5 V 4 2.5 V 2 4 3 Ta = 100°C 2 25°C 1 -25°C 4V 0 1 10 100 Drain current ID 0 0 1000 2 4 RDS (ON) – Ta Gate threshold voltage Vth Drain-Source on resistance RDS (ON) (W) (V) Common source VGS = 1.5 V, ID = 1 mA 4 2.5 V, 10 mA 0 -25 4 V, 10 mA 0 25 50 75 8 VGS 10 (V) Vth – Ta 2 2 6 Gate-Source voltage (mA) 8 6 (V) 6 Common source 6 3 100 125 1.6 1.2 0.8 0.4 0 -25 150 Ambient temperature Ta (°C) Common source ID = 0.1 mA VDS = 3 V 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2001-12-18 SSM3K16FU ïYfsï – ID IDR – VDS 250 (mA) 300 Common source VDS = 3 V Ta = 25°C 100 Drain reverse current IDR Forward transfer admittance ïYfsï (mS) 500 50 30 10 5 3 1 1 10 100 Drain current ID 200 150 D IDR G S 100 50 0 0 1000 Common source VGS = 0 V Ta = 25°C -0.2 (mA) -0.4 -0.6 -1 Drain-Source voltage VDS -1.2 -1.4 (V) t – ID C – VDS 100 5000 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 3000 50 30 (pF) (ns) toff t 10 Ciss Coss 5 Switching time Capacitance C -0.8 3 Crss Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25°C 0.3 0.1 1000 500 100 ton 50 30 0.3 0.5 1 3 5 10 30 50 Drain-Source voltage VDS 100 10 0.1 (V) tf 300 tr 1 Drain current 10 ID 100 (mA) PD – Ta Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6 t 2 Cu Pad: 0.6 mm ´ 3) 200 Drain power dissipation PD (mW) 250 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 2001-12-18 SSM3K16FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-12-18