SSM6K08FU CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category SSM6K08FU High Speed Switching Applications · Small package · Low on resistance: Unit: mm Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) · High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±12 V DC ID 1.6 Pulse IDP 3.2 PD (Note1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current Drain power dissipation A Note1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6) Marking Circuit (top view) 6 5 JEDEC ― JEITA ― TOSHIBA Figure 1. 2-2J1D Weight: 6.8 mg (typ.) Equivalent 4 6 5 4 3 1 2 3 KDC 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-24 SSM6K08FU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Min Typ. Max Unit VGS = ±12 V, VDS = 0 ¾ ¾ ±1 mA V (BR) DSS ID = 1 mA, VGS = 0 20 ¾ ¾ V (BR) DSX ID = 1 mA, VGS = -12 V 12 ¾ ¾ VDS = 20 V, VGS = 0 ¾ ¾ 1 mA VDS = 3 V, ID = 0.1 mA 0.5 ¾ 1.2 V S IGSS Drain-Source breakdown voltage Drain cut-off current IDSS Gate threshold voltage Vth Forward transfer admittance Drain-Source ON resistance ½Yfs½ RDS (ON) Test Condition VDS = 3 V, ID = 0.8 A (Note2) 2.0 ¾ ¾ ID = 0.8 A, VGS = 4 V (Note2) ¾ 77 105 ID = 0.8 A, VGS = 2.5 V (Note2) ¾ 100 140 ID = 0.8 A, VGS = 2.0 V (Note2) ¾ 125 210 V mW Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 306 ¾ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 44 ¾ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ¾ 74 ¾ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.8 A, ¾ 16 ¾ Turn-off time toff VGS = 0~2.5 V, RG = 4.7 W ¾ 15 ¾ ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 ms VDD (c) VOUT VDD = 10 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% VDD VDS (ON) 10% 90% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product. 2 2002-01-24 SSM6K08FU ID – VDS ID – VGS 4 10000 Common Source Ta = 25°C 1000 (mA) 3 Ta = 100°C 100 25°C ID 1.7 V 2 Drain current Drain current ID (A) 4 V 2.5 V 2.0 V VDS = 3 V Common Source 1.6 V 1.5 V 1 10 -25°C 1 0.1 1.4 V VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage VDS 0.01 0 2 0.4 (V) 0.8 Gate-Source voltage RDS (ON) – ID VGS 2 (V) 400 Common Source ID = 0.8 A Ta = 25°C 160 Common Source VGS = 2.0 V 120 Drain-Source on resistance RDS (ON) (mW) Drain-Source on resistance RDS (ON) (mW) 1.6 RDS (ON) – Ta 200 2.5 V 4.0 V 80 40 0 0 1 2 Drain current ID 300 200 VGS = 2.0 V 2.5 V 4V 100 0 -25 3 0 25 (A) 50 75 100 125 150 Ambient temperature Ta (°C) RDS (ON) – VGS IDR – VDS 400 4 Common Source ID = 0.8 A VGS = 0 Common Source 3 200 25°C Ta = 100°C 100 Ta = 25°C D IDR G IDR (A) 300 Drain current Drain-Source on resistance RDS (ON) (mW) 1.2 S 2 1 -25°C 0 0 2 4 6 Gate-Source voltage 8 VGS 10 0 0 12 (V) -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS 3 -1.0 -1.2 (V) 2002-01-24 SSM6K08FU |Yfs| – ID Vth – Ta 2 VDS = 3 V ID = 0.1 mA VDS = 3 V Forward transfer admittance |Yfs| (S) (V) Gate threshold voltage Vth 10 Common Source 1.5 1 3 Common Source Ta = 25°C 1 0.3 0.1 0.03 0.5 0.01 1 0 -25 3 30 10 100 Drain current 0 25 50 75 100 125 300 ID 3000 10000 1000 (mA) 150 Ambient temperature Ta (°C) Switching Time 1000 C – VDS 1000 Common Source 500 VDD = 10 V Capacitance C Switching time t (ns) Ta = 25°C 100 toff 30 tf ton 10 Ciss (pF) VGS = 0~2.5 V Rg = 4.7 W 300 100 Crss Common Source 10 tr 3 5 0.1 1 10 Coss 50 VGS = 0 f = 1 MHz Ta = 25°C 0.5 1 5 100 30 1000 ID 300 PD – Ta 350 Common Source Mounted on FR4 board 300 (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu pad: 0.32 mm ´ 6) 250 Figure 1 PD (mW) 8 ID= 1.6 A Ta = 25°C 6 Power dissipation (V) (V) (mA) VDD = 16 V VGS 100 10000 Dynamic Input Characteristic Gate-Source voltage 50 Drain-Source voltage VDS 30 Drain current 10 10 4 2 200 150 100 50 0 0 2 4 6 Total gate charge Qg 0 0 8 (nC) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2002-01-24 SSM6K08FU Safe Operating Area 10 ID max (pulse) * 3 1 ms 10 ms ID max (continuous) DC operation Ta = 25°C 0.1 Mounted on FR4 board 0.03 (25.4 mm ´ 25.4 mm ´ 1.6 t 2 Cu pad: 0.32 mm ´ 6) Figure 1 0.01 0.003 0.001 0.1 * Single non-repetitive pulsed Ta = 25°C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 Drain-Source voltage VDS 30 100 (V) 0.4 mm 0.8 mm Drain current 100 ms 0.3 ID (A) 1 25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu Pad: 0.32 mm ´ 6 Figure 1 5 2002-01-24 SSM6K08FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-01-24