SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm · Small Package · Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) · Low Gate Threshold Voltage : Ron = 0.26 Ω (max) (@VGS = −2.5 V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±12 V ID -1.3 IDP (Note 2) -2.6 PD (Note 1) 300 mW DC Drain current Pulse Drain power dissipation A Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note1: Mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6) Fig: 1. Note2: The pulse width limited by max channel temperature. Marking 6 Equivalent Circuit 5 4 6 5 JEDEC ― JEITA ― TOSHIBA 2-2J1D Weight: 6.8 mg (typ.) Fig 1: 25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm2 ´ 6 4 0.8 mm 0.4 mm KDD 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2003-02-19 SSM6J08FU Electrical Characteristics (Ta = 25°C) Characteristic Symbol Gate leakage current IGSS Drain-Source breakdown voltage Test Condition VGS = ±12 V, VDS = 0 Min Typ. Max Unit ¾ ¾ ±1 mA V (BR) DSS ID = -1 mA, VGS = 0 -20 ¾ ¾ V (BR) DSX ID = -1 mA, VGS = 12 V -8 ¾ ¾ Drain Cut-off current IDSS Gate threshold voltage Forward transfer admittance Drain-Source ON resistance VDS = -20 V, VGS = 0 ¾ ¾ -1 mA -0.5 ¾ -1.1 V (Note 3) 1.3 2.7 ¾ S ID = -0.65 A, VGS = -4 V (Note 3) ¾ 140 180 ID = -0.65 A, VGS = -2.5 V (Note 3) ¾ 200 260 ID = -0.65 A, VGS = -2.0 V (Note 3) ¾ 260 460 Vth VDS = -3 V, ID = -0.1 mA ½Yfs½ VDS = -3 V, ID = -0.65 A RDS (ON) V mW Input capacitance Ciss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 370 ¾ pF Reverse transfer capacitance Crss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 73 ¾ pF Output capacitance Coss VDS = -10 V, VGS = 0, f = 1 MHz ¾ 116 ¾ pF Switching time Turn-on time ton VDD = -10 V, ID = -0.65 A, ¾ 33 ¾ ns Turn-off time toff VGS = 0~-2.5 V, RG = 4.7 W ¾ 47 ¾ ns Note 3: Pulse test Switching Time Test Circuit (a) Test circuit ID 0 (b) VIN 0V OUT IN -2.5 V 90% -2.5 V RG 10 ms 10% VDD (c) VOUT VDD = -10 V RG = 4.7 W D.U. < = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C VDS (ON) VDD 90% 10% tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2 2003-02-19 SSM6J08FU ID – VDS ID – VGS -3.0 Common Source -2.5 Common Source Ta = 25°C -2.0 -1000 (mA) -4.0 -2.0 VDS = -3 V 100°C -100 ID -1.8 -1.5 -1.0 Drain current Drain current ID (A) -2.5 -10 -10000 -1.6 -0.5 -0.5 -1.0 -1.5 Drain-Source voltage VDS -25°C -1 -0.1 VGS = -1.4 V 0 0 Ta = 25°C -10 -0.01 0 -2.0 (V) -0.5 -1.0 -1.5 Gate-Source voltage RDS (ON) – ID -2.0 VGS (V) RDS (ON) – VGS 1.0 1.0 Common Source Common Source Ta = 25°C 0.8 Drain-Source on resistance RDS (ON) (W) Drain-Source on resistance RDS (ON) (W) -2.5 0.6 VGS = -2 V 0.4 -2.5 0.2 ID = -0.65 A 0.8 Ta = 25°C 0.6 0.4 0.2 -4 0 0 -0.5 -1.0 -1.5 Drain current -2.0 ID -2.5 0 0 -3.0 (A) -2 -4 -6 -8 Gate-Source voltage -10 VGS -12 (V) |Yfs| – ID 10 RDS (ON) – Ta 0.5 Common Source Forward transfer admittance |Yfs| (S) Drain-Source on resistance RDS (ON) (W) ID = -0.65 A 0.4 VGS = -2 V 0.3 -2.5 0.2 -4 1 0.1 Common Source 0.1 VDS = -3 V Ta = 25°C 0 -25 0 25 50 75 100 125 0.01 -0.01 150 Ambient temperature Ta (°C) -0.1 Drain current 3 -1 ID -10 (A) 2003-02-19 SSM6J08FU Vth – Ta C – VDS -1.0 600 Common Source VDS = -3 V ID = -0.1 mA VGS = 0 f = 1 MHz 500 (pF) -0.8 -0.6 Capacitance C Gate threshold voltage Vth (V) Common Source -0.4 -0.2 Ta = 25°C 400 Ciss 300 200 Coss 100 Crss 0 -25 0 25 50 75 100 125 0 0 150 -4 Ambient temperature Ta (°C) -8 -2.0 (V) Common Source VGS = 0 (A) Switching time Drain reverse current IDR toff t (ns) 100 tf ton tr Common Source VDD = -10 V VGS = 0~-2.5 V Ta = 25°C -0.1 -1 ID D Ta = 25°C -1.5 IDR G S -1.0 -0.5 0 0 RG = 4.7 W Drain current -20 IDR – VDS t – ID 1 -0.01 -16 Drain-Source voltage VDS 1000 10 -12 0.5 1 Drain-Source voltage VDS -10 (V) (A) Safe operating area -10 Dynamic Input Characteristic Mounted on FR4 board (25.4 mm ´ 25.4 mm ´1.6 t 2 Cu pad: 0.32 mm ´ 6) Fig: 1 -10 ID = -1.3 A Ta = 25°C VDD = -16 V ID max (continuous) -1 10 ms* 100 ms* ID -6 Drain current Gate-Source voltage (A) -8 ID max (pulsed) -10 V VGS (V) Common Source -4 -2 0 0 2 4 Total gate charge Qg 6 DC operation Ta = 25°C -0.1 *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.01 -0.1 8 (nC) -1 VDSS max -10 Drain-Source voltage VDS 4 -100 (V) 2003-02-19 SSM6J08FU rth – tw rth (°C /W) 1000 Transient thermal impedance 100 Single pulse 10 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu pad: 0.32 mm ´ 6) Fig: 1 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) PD – Ta 350 (mW) (25.4 mm ´ 25.4 mm ´ 1.6 t, 2 Cu pad: 0.32 mm ´ 6) PD 250 Fig: 1 Drain power dissipation Mounted on FR4 board 300 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 5 2003-02-19 SSM6J08FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-02-19