FAIRCHILD TN3440A_00

TN3440A
TN3440A
C
TO-226
B
E
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line amplifier
and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Value
Units
VCEO
Collector-Emitter Voltage
Parameter
250
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1997 Fairchild Semiconductor Corporation
Max
Units
TN3440A
1.0
8.0
125
W
mW/°C
°C/W
50
°C/W
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Sustaining Voltage*
IC = 50 mA, IB = 0
250
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 µA, IE = 0
300
V
ICEO
Collector-Cutoff Current
VCE = 200 V, IB = 0
50
µA
ICEX
Collector-Cutoff Current
VCE = 300 V, VBE = 1.5 V
500
µA
ICBO
Collector-Cutoff Current
VCB = 250 V, IE = 0
20
µA
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
20
µA
160
0.5
V
1.3
V
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
IC = 50 mA, IB = 4.0 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 4.0 mA
30
40
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
IC = 10 mA, VCE = 10 V,
f = 5.0 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
Cibo
Input Capacitance
VBE = 5.0 V, IC = 0, f = 1.0 MHz
hfe
Small-Signal Current Gain
IC = 5.0 mA, VCE = 10 V,
f = 1.0 kHz
15
MHz
10
pF
95
pF
25
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
Typical Pulsed Current Gain
vs Collector Current
1000
V CE = 5V
25 °C
125 °C
100
- 40 °C
10
1
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
VCESAT - COLLE CTOR-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
I C - COLLECTOR CURRENT (mA)
1000
TN3440A
NPN General Purpose Amplifier
(continued)
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1000
- 40 °C
800
600
25 ° C
125 ° C
400
β = 10
200
0
1
IC
10
100
- COLLECTOR CURRENT (mA)
1000
V BE(O N) - BASE- EMITTER ON VOLTAGE (mV)
V BESAT - BASE-E MITTER VOLTAGE (mV)
Typical Characteristics
1000
- 40 °C
800
25 °C
600
125 °C
400
VCE = 5V
200
0
1
CAPACITANCE (pF)
VCB = 225V
1000
100
10
1
1000
800
600
400
200
C ib, I E = 8
100
80
60
40
Ccb, I E = 0
20
0.1
25
50
75
100
125
T A- AMBIENT TE MPE RATURE (°C)
10
0.1
150
100
1
PD - POWER DISSIPATION (W)
10
60 MHz
5
40 MHz
40 MHz
20 MHz
1
1
10
REVERSE BIAS VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
Contours of Constant Gain
Bandwidth Product (f T )
VCE- COLLECTOR VOLTAGE (V)
10
100
I C - COLLECTOR CURRENT (mA)
Collector-Base / Emitter-Base
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
I CBO - COLLECTOR CURRENT (nA)
Base-Emitter ON Voltage vs
Collector Current
1
20 MHz
10
100
I C- COLLECTOR CURRENT (mA)
1000
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (o C)
125
150
TN3440A
NPN General Purpose Amplifier
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
See Fig 2.0 for va rious
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
CBVK741B019
PN2222N
NSID:
D/C1:
QTY:
Reeling Styles
HTB:B
10000
SP EC:
FSCINT
D9842
SP EC RE V:
Labe l
B2
QA REV:
5 Reels per
Int er med iate B ox
(FSCINT)
Cus tom ized
F63TNR Label s ampl e
Labe l
LOT: CBVK7 41B019
FSID: PN222N
D/C1: D9842
D/C2:
F63TNR
QTY: 2000
Labe l
SPEC:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
Cus tom ized
Labe l
(F63TNR)3
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
TO-226AE TNR/AMMO PACKING INFO RMATION
Packing
Style
Quantity
Reel
A
2,000
D26Z
E
2,000
D27Z
Am m o
M
P
EOL code
2,000
Uni t wei gh t
FSCINT
D74Z
2,000
Labe l
D75Z
327m m x 158m m x 135mm
= 0.300g m
Reel weig ht wi th c om po nents
= 0.868 k g
Amm o weig ht wi th c omp on en ts
= 0.880 k g
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
333m m x 231m m x 183mm
Int er med iate B ox
BULK OPTION
See Bulk Packing
Informat ion table
Anti -stati c
FSCINT Bar c ode Label
Bub ble Sheets
(TO-226AE ) BULK PACKING INFORMATION
EOL CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
LEADCLIP
DIMENSION
QUANTITY
TO-18 OPTION STD
NO L EAD CLIP
1.0 K / BOX
TO-5
NO L EAD CLIP
1.0 K / BOX
NO L EADCLIP
1.5 K / BOX
OPTION STD
TO-226 STANDARD
STRAIGHT
1,500 un its per
114m m x 102m m x 51mm
EO70 box for
s td o pti on
EO70 Im mediate B ox
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Reeling Style
Configuration: Fi gure 2.0
Machine Option "A" (H)
Machine Option "E"(J)
Style "A" D26Z, D70Z (s/h)
Style "E" D 27Z, D71Z (s/h)
TO-226AE Radial Ammo Packaging
Configuration: Fi gure 3.0
FIRST WIRE OFF IS EMITTER (ON PKG. 92)
FIRST WIRE OFF IS COL LECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON THE TOP SIDE
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FLAT OF TRANSISTOR IS ON TOP
ORDER STYLE
D74Z (M)
ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS EMITTER
FIRST WIRE OFF IS COL LECTOR
ADHESIVE TAPE IS ON BOTTOM SIDE
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM
FLAT OF TRANSISTOR IS ON TOP
October 1999, Rev. A1
TO-226AE Tape and Reel Data, continued
TO-226AE Tape and Reel Taping
Dimension Configuration:
Fi gur e 4.0
Hd
P
Pd
b
Hb
W1
d
L
H1
HO
L1
S
WO
t
W2
W
t1
P1
F1
DO
P2
PO
User Direction of Feed
TO-226AE Reel
Configuration:
Fi gur e 5.0
ITEM DESCRI PTION
SYM BOL
DIMENSION
Base of Package to Lead Bend
b
0.098 (max)
Component Height
Hb
1.078 (+/- 0.050)
Lead Clinch He ight
HO
0.630 (+/- 0.020)
Component Base Heig ht
H1
0.748 (+/- 0.020)
Component Alignment (s ide / side )
Pd
0.040 (max)
Component Alignment ( front/back )
Hd
0.031 (max)
Component Pitch
P
0.500 (+/- 0.020)
Feed Hole Pitch
PO
0.500 (+/- 0.008)
Hole Center to First Lead
P1
0.150 (+0.009, -0.010 )
Hole Center to Component Center
P2
0.247 (+/- 0.007)
Lead Spread
F1/F2
0.104 (+/- 0 .010)
Lead Thickness
d
0.018 (+0.002, -0.003)
Cut Lead Length
L
0.429 (max)
Taped Lead Lengt h
L1
0.209 (+0.051, -0.052)
Taped Lead Thickness
t
0.032 (+/- 0.006)
Carrier Tape Thickness
t1
0.021 (+/- 0.006)
Carrier Tape Width
W
0.708 (+0.020, -0.019)
Hold - down Tape Width
WO
0.236 (+/- 0.012)
Hold - down Tape position
W1
0.035 (max)
Feed Hole Position
W2
0.360 (+/- 0.025)
Sprocket Hole Diameter
DO
0.157 (+0.008, -0.007)
Lead Spring O ut
S
0.004 (max)
Note : All dimensions are in inches.
E LE CT ROS TA TIC
S EN SI TIV E D EV ICE S
D4
D1
D2
F63TNR Label
ITEM DESCRIPT ION
SYMBOL
Reel Diamet er
D1
13.975
Arbor Hole Diameter (Standard)
D2
1.160
1.200
(Small Hole)
D2
0.650
0.700
Customized Label
MAXIMUM
14.025
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Dept h
W1
MINIMUM
W1
0.370
0.570
Flange to Flange Inner W idth
W2
1.630
1.690
Hu b to Hu b Cente r W idth
W3
2.09 0
W3
W2
Note: All dimensions are inches
D3
October 1999, Rev. A1
TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
S4.70-4.32;
S1.52-1.02;
2" TYP
S7.73-7.10;
S7.87-7.37;
2" TYP
S1.65-1.27;
0.51
S0.760.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.40-1.14;
PIN
S1.40-1.14;
99
95
1
E
E
2
B
C
3
C
B
S4.45-3.81;
5" TYP
1
2
3
TO-226AE (95,99)
S2.41-2.13;
©2000 Fairchild Semiconductor International
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G