2N3903 2N3903 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2001 Fairchild Semiconductor Corporation Max Units 2N3903 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 2N3903, Rev A (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage I C = 10 µA, I E = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, IC = 0 6.0 Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA z ICEX IBL V ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 20 35 50 30 15 0.65 150 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF Cib Input Capacitance VEB = 0.5 V, f = 100 kHz 8.0 pF hfe Small-Signal Current Gain 2.5 hfe Small-Signal Current Gain IC = 10 mA, VCE = 20 V, f = 100 MHz VCE = 10 V, IC = 1.0 mA 50 200 hie Input Impedance f = 1.0 kHz 1.0 8.0 kΩ hre Voltage Feedback Ratio 0.1 5.0 hoe NF Output Admittance Noise Figure -4 40 x 10 µmhos VCE = 5.0 V, IC = 100 µA, RS = 1.0 kΩ, BW = 10 Hz to 15.7 kHz 6.0 dB ns 1.0 SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, IC = 10 mA, 35 tr Rise Time ns Storage Time I B1 = 1.0 mA , Vob ( off ) = 0.5 V VCC = 3.0 V, IC = 10 mA 35 ts 175 ns tf Fall Time I B1 = IB2 = 1.0 mA 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 2N3903 NPN General Purpose Amplifier (continued) V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β = 10 - 40 °C 25 °C 0.6 125 °C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 β = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N3903 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 µA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 µA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 µA 8 6 I C = 100 µA 4 2 0 0.1 100 V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) PD - POWER DISSIPATION (W) - CURRENT GAIN (dB) fe h θ 1 θ - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 1000 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 Turn-On Time vs Collector Current I B1 = I B2 = Ic VCC = 40V 10 TIME (nS) 15V t r @ V CC = 3.0V 2.0V 10 1 10 I C - COLLECTOR CURRENT (mA) 125 150 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 10 t d @ VCB = 0V 5 50 75 100 TEMPERATURE (o C) Rise Time vs Collector Current 40V 100 25 500 t r - RISE TIME (ns) 500 100 Power Dissipation vs Ambient Temperature Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100 2N3903 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current I B1 = I B2 = T J = 25°C Fall Time vs Collector Current 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125°C 10 5 T J = 125°C 100 T J = 25°C 1 10 I C - COLLECTOR CURRENT (mA) 5 100 1 10 I C - COLLECTOR CURRENT (mA) Current Gain h oe - OUTPUT ADMITTANCE ( µmhos) V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 1 I C - COLLECTOR CURRENT (mA) 10 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Voltage Feedback Ratio ) _4 V CE = 10 V f = 1.0 kHz T A = 25oC 10 0.1 0.1 100 10 Input Impedance 100 100 Output Admittance h re - VOLTAGE FEEDBACK RATIO (x10 h fe - CURRENT GAIN VCC = 40V 10 500 h ie - INPUT IMPEDANCE (kΩ ) Ic 10 10 7 V CE = 10 V f = 1.0 kHz T A = 25oC 5 4 3 2 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N3903 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 275 Ω 300 ns 10.6 V Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF - 0.5 V < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit 2N3903 NPN General Purpose Amplifier TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION QUANTITY TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO LEADCLIP 2.0 K / BOX NO LEADCLIP 2.0 K / BOX TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION J18Z NO EOL CODE 5 Ammo boxes per Intermediate Box See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option ©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G