TLP331,TLP332 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP331,TLP332 Office Machine Household Use Equipment Programmable Controllers AC / DC−Input Module Telecommunication Unit in mm The TOSHIBA TLP331 and TLP332 consists of a gallium arsenide infrared emitting diode optically coupled to a photo−transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 is no−base internal connection for high−EMI environments. · Collector−emitter voltage: 55V (min.) · Isolation voltage: 5000Vrms (min.) · UL recognized: UL1577, file no. E67349 · Current transfer ratio Classification (*) TOSHIBA Weight: 0.4 g Current Transfer Ratio (min.) Ta = 25°C Ta = -25~75°C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V Marking Of ClassiFication Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank (*) Ex. 11−7A8 Standard: TLP331 Rank BV: TLP331(BV) (Note) Application type name for certification test, please use standard product type name, i.e. TLP331(BV): TLP331 Pin Configurations(top view) TLP331 1 6 1 6 2 5 2 5 3 4 3 4 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: BASE 1 TLP332 1: ANODE 2: CATHODE 3: NC 4: EMITTER 5: COLLECTOR 6: NC 2002-09-25 TLP331,TLP332 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF /°C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse Voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 55 V Collector-base voltage (TLP331) VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage (TLP331) VEBO 7 V Collector current IC 50 mA Power dissipation PC 150 mW ∆PC / °C -1.5 mW / °C Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW PT/°C -2.5 mW / °C BVS 5000 Vrms Forward current Detector LED Forward current derating (Ta ≥ 39°C) Power dissipation derating (Ta ≥ 25°C) Junction temperature Total package power dissipation derating (Ta≥25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 25 V Forward current IF — 1.6 25 mA Collector current IC ― 1 10 mA Topr -25 ― 75 °C Operating temperature 2 2002-09-25 TLP331,TLP332 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 µA Capacitance CT V = 0, f = 1MHz ― 30 ― pF V(BR)CEO IC = 0.5mA 55 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V V(BR)CBO IC = 0.1mA 80 ― ― V V(BR)EBO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 100 nA VCE = 24V, Ta = 85°C ― 2 50 µA Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage (TLP331) Detector Symbol Emitter-base breakdown voltage (TLP331) Collector dark current ICEO Collector dark current (TLP331) ICER VCE = 24V, Ta = 85°C RBE = 1MΩ ― 0.5 10 µA Collector dark current (TLP331) ICBO VCB = 10V ― 0.1 ― nA DC forward current gain (TLP331) hFE VCE = 5V, IC = 0.5mA ― 1000 ― ― Capacitance (collector to emitter) CCE V = 0 , f = 1MHz ― 12 ― pF Test Condition Min. Typ. Max. Unit IF = 1mA, VCE = 0.5V Rank BV 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― IF = 1mA, VCB = 5V ― 10 ― IC = 0.5mA IF = 1mA ― — 0.4 IC = 1mA IF = 1mA Rank BV ― 0.2 ― ― ― 0.4 Min. Typ. Max. Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Low input CTR Base photo-current (TLP331) Collector-emitter saturation voltage Symbol IC / IF IC / IF(low) IPB VCE(sat) IF = 0.5mA, VCE = 1.5V Rank BV % % µA V Coupled Electrical Characteristics (Ta = 25~75°C) Characteristic Current transfer ratio Low input CTR Symbol IC / IF IC / IF(low) Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV 3 50 ― ― 100 ― ― ― 50 ― ― 100 ― Unit % % 2002-09-25 TLP331,TLP332 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance (input to output) Test Condition CS Isolation resistance Min. Typ. Max. Unit ― 0.8 ― pF 10 ― Ω 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― ― 12 ― ― 30 ― ― 100 ― VS = 0, f = 1MHz RS 10 V = 500V 5´10 AC, 1 minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time tON Storage time tS Turn-off time tOFF Turn-on time tON Storage time tS Turn-off time tOFF Test Condition VCC = 10V IC = 2mA RL = 100Ω (Fig.1) RL = 4.7kΩ RBE = OPEN VCC = 5V, IF = 1.6mA (Fig.1) RL = 4.7kΩ RBE = 470kΩ (TLP331) VCC = 5V, IF = 1.6mA µs µs µs Fig. 1 Switching time test circuit IF RL IF VCC tS VCE VCE RBE tON 4 4.5V VCC 0.5V tOFF 2002-09-25 TLP331,TLP332 PC – Ta 200 80 160 Allowable collector power Dissipation PC (mW) Allowable forward current IF (mA) IF – Ta 100 60 40 20 0 -20 0 40 20 60 80 100 120 80 40 0 -20 120 0 20 Ambient temperature Ta (°C) 40 Ta = 25°C 500 Ta = 25°C (mA) (mA) 1000 500 Forward current IF IFP Pulse forward current 120 300 300 100 50 30 10 100 50 30 10 5 3 3 10-3 10-2 3 10-1 3 DUTY CYCLE RATIO 1 0.6 100 3 0.8 DR 1.0 1.2 Forward voltage ΔVF/ΔTa – IF 1.4 1.6 VF 1.8 (V) IFP – VFP -3.2 1000 (mA) -2.4 IFP 500 -2.8 Pulse forward current Forward voltage temperature Coefficient ΔVF / ΔTa (mV/°C) 100 IF – VF 1000 Pulse width≦100μs 3000 80 Ambient temperature Ta (°C) IFP – DR 5000 60 -2.0 -1.6 -1.2 -0.8 300 100 50 30 10 Pulse width≦10μs 5 Repetitive frequency 3 = 100Hz Ta = 25°C -0.4 0.1 0.3 0.5 1 3 Forward current 5 IF 10 30 1 0.6 50 (mA) 1.0 1.4 1.8 2.2 2.6 Pulse forward voltage VFP (V) 5 2002-09-25 TLP331,TLP332 IC/IF – IF IC – VCE 4.0 1000 300 (mA) 3.0 0.8mA 2.5 IC 100 50 Collector current Current transfer ratio IF=1.0mA 3.5 IC/IF (%) 500 Ta = 25°C Ta = 25°C 30 VCE = 5V VCE = 1.5V VCE = 0.5V 2.0 0.6mA 1.5 0.5mA 10 0.1 0.3 0.5 1 Forward current 3 IF 5 1.0 10 0.4mA (mA) 0.5 0.2mA IC – IF 50 30 0 0.1 Ta = 25°C 0.3 VCE = 5V 0.5 1 Collector-emitter voltage VCE = 1.5V VCE = 0.5V 3 5 VCE (V) 10 IC – Ta 30 VCE = 1.5V VCE = 0.5V 10 IF=2mA 5 10 (mA) 5 1mA 3 IC 1 Collector current Collector current IC (mA) 3 0.5 0.3 0.5mA 1 0.5 0.3 0.1 0.2mA 0.05 0.1 0.03 0.05 0.01 0.1 0.3 0.5 1 Forward current 3 IF 5 0.03 10 (mA) -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 6 2002-09-25 TLP331,TLP332 ID – Ta Switching Time – RL 101 5000 3000 VCE=24V 5V 1000 500 10-1 300 Switching time (μs) Collector dark current ID(ICEO) (μA) 0 IF = 1.6mA VCC = 5V 10V 10 Ta = 25°C 10-2 10-3 tOFF 100 50 tS 30 tON 10-4 10 5 10-5 0 20 40 60 80 100 3 1 120 Ambient temperature Ta (°C) 3 5 10 30 50 100 Load resistance RL (kΩ) 7 2002-09-25 TLP331,TLP332 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 2002-09-25