TOSHIBA TLP3052

TLP3051,TLP3052
TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP3051,TLP3052
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
Unit in mm
The TOSHIBA TLP3051 and TLP3052 consist of a photo−triac optically
coupled to a gallium arsenide infrared emitting diode in a six lead plastic
DIP package.
·
Peak off−state voltage: 600 V (min.)
·
Trigger LED current: 15 mA (max.) (TLP3051)
·
On−state current: 100 mA (max.)
·
UL recognized: UL1577, file no. E67349
10 mA (max.) (TLP3052)
Isolation voltage: 5000 Vrms (min.)
·
Option (D4) type
VDE approved: DIN VDE0884 / 08.87,
Certificate no. 68329
TOSHIBA
Maximum operating insulation voltage: 630 VPK
Weight: 0.44 g
Highest permissible over voltage: 6000 VPK
(Note)
·
11−9A2
When a VDE0884 approved type is needed,
please designate the “option (D4)“
Pin Configuration(top
view)
7.62 mm pich
standard type
Creepage distance: 7.0 mm (min.)
10.16 mm pich
(LF2) type
8.0 mm (min.)
Clearance: 7.0 mm (min.)
8.0 mm (min.)
Insulation thickness: 0.5 mm (min.)
0.5 mm (min.)
1
6
2
3
4
1
2
3
4
6
1
:
:
:
:
:
Anode
Cathode
Nc
Terminal 1
Terminal 2
2002-09-25
TLP3051,TLP3052
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
Forward current derating
(Ta ≥ 53°C)
∆IF/°C
-0.7
mA/°C
Peak forward current
(100 µs pulse, 100 pps)
IFP
1
A
Power dissipation
PD
100
mW
∆PD/°C
-1.0
mW/°C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VDRM
600
V
LED
Forward current
Power dissipation derating
(Ta ≥ 25°C)
Off-state output terminal
voltage
On-state RMS
current
Ta = 25°C
100
IT(RMS)
Ta = 70°C
On-state current derating
(Ta ≥ 25°C)
mA
50
-1.1
mA/°C
ITP
2
A
ITSM
1.2
A
PD
300
mW
∆PD/°C
-4.0
mW/°C
Tj
115
°C
Storage temperature range
Tstg
-55~150
°C
Operating temperature range
Topr
-40~100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Total package power dissipation
PT
330
mW
Total package power dissipation
derating (Ta ≥ 25°C)
∆PT/°C
-4.4
mW/°C
BVS
5000
Vrms
Detector
∆IT/°C
Peak on-state current
(100µs pulse, 120 pps)
Peak nonrepetitive surge
current (Pw = 10 ms, DC = 10%)
Power dissipation
Power dissipation derating
(Ta ≥ 25°C)
Junction temperature
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
(Note 1)
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
―
―
240
Vac
Forward current
IF*
15
20
25
mA
Peak on-state current
ITP
―
―
1
A
Operating temperature
Topr
-25
―
85
°C
※ In the case of TLP3052
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2002-09-25
TLP3051,TLP3052
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
µA
Capacitance
CT
V = 0, f = 1 MHz
―
30
―
pF
Peak off-state current
IDRM
VDRM = 600 V
―
10
1000
nA
Peak on-state voltage
VTM
ITM = 100 mA
―
1.7
3.0
V
―
1.0
―
mA
―
500
―
V/µs
―
0.2
―
V/µs
Min.
Typ.
Max.
Unit
―
―
15
―
5
10
0.8
―
pF
10
―
Ω
Holding current
IH
―
Critical rate of rise of
off-state voltage
dv/dt
Vin = 240 Vrms, Ta = 85°C
Critical rate of rise of
commutating voltage
dv/dt (c)
Vin = 60 Vrms, IT = 15mA
(Fig.1)
(Fig.1)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
TLP3051
Trigger LED current
TLP3052
Capacitance input to output
Isolation resistance
Test Condition
IFT
VT = 6 V
CS
VS = 0, f = 1 MHz
RS
―
VS = 500 V, (R.H.≤ 60%)
AC, 1 minute
Isolation voltage
Fig. 1
BVS
10
14
5×10
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
mA
Vrms
Vdc
dv/dt test circuit
+
VCC
Rin
120Ω
-
1
2
3
4
＋5V,VCC
Vin
6
RL
4kΩ
3
0V
～
dv/dt（c）
dv/dt
2002-09-25
TLP3051,TLP3052
I F – Ta
60
100
R.M.S ON-State current
IT(RMS) (mA)
Allowable forward current
IF (mA)
50
40
30
20
10
0
－20
IT(RMS)– Ta
120
0
20
40
60
80
100
80
60
40
20
0
－20
120
0
Ambient temperature Ta (℃)
IFP – DR
300
100
50
30
10－2
3
10－1
3
IF (mA)
500
10－3
30
5
3
1
0.5
0.3
0.6
0.8
(mA)
IFP
Pulse forward current
Forward voltage temperatureCoefficient
ΔVF / ΔTa (mV / ℃)
－2.0
－1.6
－1.2
－0.8
1
Forward current
3
IF
5
1.0
1.2
1.4
1.6
1.8
2.6
3.0
IFP – VFP
1000
－2.4
0.5
120
Forward voltage VF（V)
ΔVF / ΔTa – IF
0.3
100
10
0.1
100
3
－2.8
－0.4
0.1
80
Ta＝25℃
Duty cycle ratio DR
－3.2
60
50
1000
10
3
40
IF – VF
100
Pulse width≦100µs
Ta＝25℃
Forward current
Allowable pulse forward current
IFP (mA)
3000
20
Ambient temperature Ta (℃)
10
30
500
300
100
50
30
10
Pulse width≦10µs
5
Repetitive frequency
3
=100Hz
Ta=25℃
1
0.6
50
(mA)
1.0
1.4
1.8
2.2
Pulse forward voltage VFP (V)
4
2002-09-25
TLP3051,TLP3052
Normalized IFT － Ta
Normalized IH － Ta
3
3
2
1.2
1
1.2
1
Holding current IH
（arbitrary unit）
Trigger LED current IFT
（arbitrary unit）
VT=6V
2
0.5
0.3
0.1
－40
0
－20
20
40
60
80
0.5
0.3
0.1
－40
100
－20
Normalized IDRM － Ta
10
40
60
80
100
80
100
VDRM=Ratend
2
101
100
0
20
60
40
10
1.2
1.0
0.8
0.6
0.4
0.2
－40
100
80
－20
0
20
40
60
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized LED current
IF / IFT
20
Normalized VDRM － Ta
1.4
Off-state output terminal voltage
V DRM（arbitrary unit）
Peak off-state current IDRM
（Arbitrary unit）
103
0
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized LED Current
－LED Current Pulse Width
5
3
2
1.8
1.6
1.4
1.2
1
10
30
50
100
300
500
1000
LED current pulse width Pw (µs)
5
2002-09-25
TLP3051,TLP3052
RESTRICTIONS ON PRODUCT USE
000707EBC
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
·
·
·
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
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2002-09-25