TLP3527 TOSHIBA Photocoupler GaAs Ired & Photo−Triac TLP3527 Triac Driver Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA TLP3527 consists of a zero voltage crossing turn−on photo−triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package. · Peak off−state voltage: 600V (min.) · Trigger LED current: 10mA (max.) · On−state current: 1.0Arms (max.) · Isolation voltage: 2500Vrms (min.) · UL recognized: UL1577, file No.E67349 TOSHIBA Pin Configurations (top view) 11−20A2 Weight: 1.13g 15 2 3 13 4 5 6 ZC 11 7 9 2 3 4,5,6,7 9,13 11 15 : Anode : Cathode : N.C. : Triac T2 : Triac T1 : Triac gate 1 2002-09-25 TLP3527 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit IF 50 mA ∆IF / °C -0.7 mA / °C Peak forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C VDRM 600 V Forward current LED Forward current derating (Ta ≥ 53°C) Off-state output terminal voltage Detector On-state RMS current Ta=40°C 1.0 IT (RMS) Ta=60°C A 0.7 ∆IT / °C -14.3 mA / °C ISP 2 A ITSM 10 A Tj 110 °C Storage temperature range Tstg -40~125 °C Operating temperature range Topr -20~80 °C Lead soldering temperature (10s) Tsol 260 °C BVS 2500 Vrms On-state current derating (Ta ≥ 40°C) Peak current from snubber circuit (100µs pulse, 120pps) Peak nonrepetitive surge current (50Hz, peak) Junction temperature Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note) (Note) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 240 Vac Forward current IF 15 20 25 mA Peak current from snubber circuit ISP ― ― 1 A Operating temperature Topr -20 ― 80 °C 2 2002-09-25 TLP3527 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF=10mA 1.0 1.15 1.3 V Reverse current IR VR=5V ― ― 10 µA Capacitance CT V=0, f=1MHz ― 30 ― pF Peak off-state current IDRM VDRM=600V, Ta=110°C ― ― 100 µA Peak on-state voltage VTM ITM=1.5A ― ― 3.0 V IH RL=100Ω ― ― 25 mA ― 500 ― V / µs ― 5 ― V / µs Min. Typ. Max. Unit Holding current Critical rate of rise of off-state voltage dv / dt Critical rate of rise of commutating voltage dv / dt (c) Vin=240Vrms (fig.1) Vin=240Vrms, IT=1.0Arms (fig.1) Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Trigger LED current IFT VT=6V ― ― 10 mA Inhibit voltage VIH IF=Rated IFT ― ― 50 V Leakage in inhibited state IIH IF=Rated IFT VT=Rated VDRM ― 200 ― µA Capacitance (input to output) CS VS=0, f=1MHz ― 1.5 ― pF Isolation resistance RS VS=500V 5×1010 1014 ― Ω 2500 ― ― AC, 1 second, in oil ― 5000 ― DC, 1 minute, in oil ― 5000 ― AC, 1 minute Isolation voltage BVS Vrms Vdc Fig.1: dv / dt test circuit VCC ＋ － Rin 120Ω 2 15 3 13 5V, VCC ～ 11 9 0V Vin dv / dt (c) RL 3 dv / dt 2002-09-25 TLP3527 I F – Ta IT (RMS) – Ta 2.0 On-state current IT(RMS) (A) Allowable forward current IF (mA) 100 80 60 40 20 0 -20 0 20 40 60 80 100 120 1.6 1.2 0.8 0.4 0 -20 0 20 Ambient temperature Ta (℃) 40 60 80 100 120 Ambient temperature Ta (℃) IFP - DR 3000 Ta = 25℃ 50 IF (mA) 1000 500 300 100 50 30 10 3 IF – VF 100 Ta = 25℃ Forward current Allowable pulse forward current IFP (mA) Pulse width ≦100µs 10 －3 3 10 －2 3 10 1 3 10 30 10 5 3 1 0.5 0.3 0 0.1 0.6 0.8 Duty cycle ratio DR 1.4 1.6 1.8 IFP – VFP IFP (mA) 1000 -2.8 -2.4 Pulse forward current Forward voltage temperature coefficient ∆VF / ∆Ta (mV / ℃) 1.2 ∆VF / ∆Ta – IF -3.2 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.0 Forward voltage VF (V) 0.3 0.5 1 3 Forward current 5 10 30 500 300 100 50 30 10 50 Repetitive frequency 3 0.1 0.6 IF (mA) Pulse width ≦ 10µs 5 ＝100Hz Ta = 25℃ 1.0 1.4 1.8 2.2 2.6 Pulse forward voltage VFP (V) 4 2002-09-25 TLP3527 Normalized IFT – Ta 3 Normalized IH – Ta 3 VT = 3V 2 Holding current IH (arbitrary unit) Trigger LED current IFT (arbitrary unit) 2 1.2 1 0.5 0.3 0.1 -40 -20 0 20 40 60 80 1.2 1 0.5 0.3 0.1 -40 100 -20 Ambient temperature Ta (℃) Off-state output terminal voltage VDRM (arbitrary unit) IDRM Peak off-state current (arbitrary unit) 100 80 100 20 40 60 80 80 100 1.2 1.0 0.8 0.6 0.4 0.2 -40 100 -20 Ambient temperature Ta (℃) 0 20 40 60 Ambient temperature Ta (℃) Normalized VIH – Ta Normalized IIH – Ta 3 3 2 2 Inhibit current IIH (arbitrary unit) Inhibit voltage VIH (arbitrary unit) 60 Normalized VDRM – Ta 1 0 40 1.4 VDRM = Rated 102 10 20 Ambient temperature Ta (℃) Normalized IDRM – Ta 103 0 1.2 1 0.5 0.3 1.2 1 0.5 0.3 IF = Rated IFT IF = Rated IFT VT = Rated VDRM 0.1 -40 -20 0 20 40 60 80 0.1 -40 100 Ambient temperature Ta (℃) -20 0 20 40 60 80 100 Ambient temperature Ta (℃) 5 2002-09-25 TLP3527 RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · · · The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 6 2002-09-25