MITSUBISHI POWER MOSFET ARY FL20KM-5A IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-SPEED SWITCHING USE Nch POWER MOSFET FL20KM-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 ➁ ● ● ● ● 10V DRIVE VDSS ................................................................................ 250V rDS (ON) (MAX) .............................................................. 0.19Ω ID ......................................................................................... 20A Viso ................................................................................ 2000V 2.6 ± 0.2 ➀➁➂ ● 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ➀ GATE ➁ DRAIN ➂ SOURCE ➀ ➂ TO-220FN APPLICATION Inverter type fluorescent light sets, SMPS MAXIMUM RATINGS (Tc = 25°C) Symbol Parameter Ratings Unit 250 ±30 V V 20 60 A A 20 35 A W Channel temperature –55 ~ +150 °C Storage temperature Isolation voltage AC for 1minute, Terminal to case –55 ~ +150 2000 Weight Typical value °C V g VDSS VGSS Drain-source voltage Gate-source voltage ID IDM Drain current Drain current (Pulsed) IDA PD Avalanche current (Pulsed) Maximum power dissipation Tch Tstg Viso — Conditions VGS = 0V VDS = 0V L = 200µH 2.0 Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL20KM-5A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS V (BR) GSS Drain-source breakdown voltage Gate-source breakdown voltage ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V IGSS IDSS Gate-source leakage current Drain-source leakage current VGS (th) Gate-source threshold voltage rDS (ON) VDS (ON) y fs Ciss Forward transfer admittance Input capacitance Coss Crss Output capacitance Reverse transfer capacitance td (on) tr Turn-on delay time Rise time td (off) Turn-off delay time tf VSD Fall time Source-drain voltage Rth (ch-c) Trr Thermal resistance Reverse recovery time Limits Test conditions Unit Min. Typ. Max. 250 ±30 — — — — V V VGS = ±30V, VDS = 0V VDS = 250V, VGS = 0V — — — — ±10 1.0 µA mA ID = 1mA, VDS = 10V 2.0 3.0 4.0 V Drain-source on-state resistance ID = 10A, VGS = 10V Drain-source on-state voltage ID = 10A, VGS = 10V — — 0.15 1.50 0.19 1.90 Ω V ID = 10A, VDS = 10V — — 12 1300 — — S pF VDS = 25V, VGS = 0V, f = 1MHz — — 250 40 — — pF pF — — 25 50 — — ns ns — 200 — ns IS = 10A, VGS = 0V — — 80 1.5 — 2.0 ns V Channel to case IS = 20A, VGS = 0V, dis/dt = –100A/µs — — — 300 3.57 — °C/W ns VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω PERFORMANCE CURVES DRAIN CURRENT ID (A) 40 30 20 10 0 0 50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 50 100 150 7 5 3 2 200 tw = 10µs 100µs 101 7 5 3 2 1ms 10ms 100 7 5 3 2 100ms DC 10-1 7 5 3 2 Tc = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V PD = 35W VGS = 20V 7V 40 10V Tc = 25°C Pulse Test 30 6V 20 10 5V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 Tc = 25°C Pulse Test 10V 16 6V 5V 12 8 PD = 35W 4 4V 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL20KM-5A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 0.40 Tc = 25°C Pulse Test 16 12 ID = 40A 8 20A 4 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Tc = 25°C Pulse Test 0.32 VGS = 10V 0.24 20V 0.16 0.08 10A 0 0 4 8 12 16 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 50 40 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 7 5 30 20 10 0 Tc = 25°C VDS = 10V Pulse Test 0 4 8 12 16 101 7 5 VDS = 10V Pulse Test 3 100 0 10 20 2 5 7 101 3 2 5 7 102 3 DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 5 4 3 Ciss 7 5 3 2 102 7 5 3 2 Coss Crss Tch = 25°C f = 1MHZ VGS = 0V 2 3 5 7 100 2 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 2 GATE-SOURCE VOLTAGE VGS (V) 103 7 5 3 3 2 3 2 101 Tc = 25°C 75°C 125°C td(off) 2 102 tf 7 tr 5 4 3 2 td(on) Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω 101 7 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) 5 5 7 100 2 3 5 7 101 2 3 5 DRAIN CURRENT ID (A) Aug. 1999 MITSUBISHI POWER MOSFET ARY MIN RELI FL20KM-5A . ge. ation ecific ct to chan je nal sp ot a fiits are sub n is is e: Th tric lim Notice parame Som P HIGH-SPEED SWITCHING USE Nch POWER MOSFET GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 50 Tch = 25°C ID = 20A SOURCE CURRENT IS (A) GATE-SOURCE VOLTAGE VGS (V) 20 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 16 VDS = 50V 12 100V 200V 8 4 0 0 20 40 60 80 TC = 25°C 40 75°C 30 125°C 20 VGS = 0V Pulse Test 10 0 100 0 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 100 7 5 4 3 2 4.0 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 1.2 1.0 0.8 0.6 VGS = 0V ID = 1mA –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) 0.4 3.2 5.0 VGS = 10V ID = 10A Pulse Test 2 10–1 2.4 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 4 3 1.6 SOURCE-DRAIN VOLTAGE VSD (V) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) GATE CHARGE Qg (nC) 0.8 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 Duty = 1.0 3 2 0.5 100 0.2 7 5 0.1 3 2 10–1 7 5 3 2 0.05 0.02 PDM 0.01 tw Single Pulse T D= tw T 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Aug. 1999