MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING ➄ ➀ ➃ 6.0 4.4 ➇ Dimensions in mm 1.8 MAX. 5.0 0.4 1.27 ➀➁➂ ➃ ● 4V DRIVE ● VDSS ............................................................................... –30V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ......................................................................................... –8A ➀ ➁ ➂ SOURCE ➃ GATE ➄ ➅ ➆ ➇ DRAIN ➄➅➆➇ SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM IDA Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) IS ISM PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature — Weight Ratings Unit VGS = 0V VDS = 0V Conditions –30 ±20 V V L = 10µH –8 –56 –8 A A A –2.1 –8.4 2.0 –55 ~ +150 –55 ~ +150 A A W °C °C 0.07 g Typical value Sep.1998 MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage IGSS IDSS VGS (th) rDS (ON) rDS (ON) Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Limits Test conditions ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –30V, VGS = 0V ID = –1mA, VDS = –10V ID = –8A, VGS = –10V ID = –4A, VGS = –4V ID = –8A, VGS = –10V ID = –8A, VDS = –10V Typ. — — — Max. — ±0.1 –0.1 –1.5 — — — –2.0 14 26 0.112 –2.5 20 37 0.160 V mΩ mΩ V — — — — 19 3650 900 385 — — — — S pF pF pF — — — — 30 55 250 105 — — — — ns ns ns ns — –0.77 –1.20 V — — — 100 62.5 — °C/W ns VDS = –10V, VGS = 0V, f = 1MHz VDD = –15V, ID = –4A, VGS = –10V, RGEN = RGS = 50Ω Turn-off delay time Fall time Source-drain voltage IS = –2.1A, VGS = 0V Channel to ambient Thermal resistance Reverse recovery time Unit Min. –30 — — IS = –2.1A, dis/dt = 50A/µs V µA mA PERFORMANCE CURVES DRAIN CURRENT ID (A) 2.0 1.5 1.0 0.5 0 0 50 100 150 tw = 1ms –101 –7 –5 –3 –2 10ms –100 –7 –5 –3 –2 100ms Tc = 25°C Single Pulse –10–1 –7 –5 –3 –2 DC –10–2 –2 –10 –2–3 –5–7–10–1 –2–3 –5–7–100 –2–3 –5–7–101 –2–3 –5–7–102 200 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = –10V –20 –6V –5V –8V –40 –7 –5 –3 –2 CASE TEMPERATURE TC (°C) –50 DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA –102 –4V –30 Tc = 25°C Pulse Test –20 –3V –10 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 2.5 VGS = –10V –4V –5V –16 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) –3V –6V –8V –12 –8 –2.5V –4 PD = 2W 0 Tc = 25°C Pulse Test PD = 2W 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 Tc = 25°C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) –2.0 –1.6 –1.2 –0.8 ID = –32A –24A –0.4 0 –16A –8A 0 –2 –4 –6 –8 32 24 16 –10V 8 0 –10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5 –10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 –40 Tc = 25°C VDS = –10V Pulse Test –32 –24 –16 –8 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) VGS = –4V Tc = 25°C Pulse Test Tc =25°C 75°C 125°C 3 2 101 7 5 VDS = –10V Pulse Test 3 2 0 0 –2 –4 –6 –8 100 –5 –7 –100 –10 –5 –7 –101 –2 –3 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 2 104 Tch = 25°C VGS = 0V f = 1MHZ 7 5 Ciss 3 2 103 Coss 7 5 Crss 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) –2 –3 3 td(off) –5 Tch = 25°C VDD = –15V VGS = –10V RGEN = RGS = 50Ω 2 tf 102 7 5 tr 3 td(on) 2 3 2 –5–7–10–1 –2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 DRAIN-SOURCE VOLTAGE VDS (V) 101 –1 –10 –2 –3 –5 –7 –100 –2 –3 –5 –7 –101 DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE –10 SOURCE CURRENT IS (A) VDS = –25V –20V –6 –10V –4 –2 0 20 40 60 80 –16 –8 –0.4 –0.8 –1.2 –1.6 –2.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) –2.0 VGS = –10V ID = –8A Pulse Test 2 100 7 5 3 2 –50 0 50 100 VDS = –10V ID = –1mA –1.6 –1.2 –0.8 –0.4 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = –1mA 1.2 1.0 0.8 0.6 0.4 0 GATE CHARGE Qg (nC) 3 10–1 Tc = 25°C 75°C 125°C –24 0 101 7 5 VGS = 0V Pulse Test –32 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) –40 Tch = 25°C ID = –8A –8 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 101 7 5 3 2 0.2 0.1 0.05 PDM 100 7 5 3 2 10–1 0.02 0.01 Single Pulse 7 5 3 2 tw T D= tw T 10–2 10–4 2 3 5710–3 23 5710–2 23 5710–12 3 57100 2 3 57 101 2 3 57102 2 3 57103 PULSE WIDTH tw (s) Sep.1998