MITSUBISHI FK20KM-6

MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
FK20KM-6
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
w
2.6 ± 0.2
1 2 3
¡VDSS ................................................................................ 300V
¡rDS (ON) (MAX) .............................................................. 0.33Ω
¡ID ......................................................................................... 20A
¡Viso ................................................................................ 2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
q GATE
w DRAIN
e SOURCE
q
e
TO-220FN
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
—
(Tc = 25°C)
Parameter
Conditions
Drain-source voltage
VGS = 0V
Gate-source voltage
Drain current
Drain current (Pulsed)
VDS = 0V
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
Ratings
300
±30
20
60
Unit
V
V
A
A
20
60
40
–55 ~ +150
A
A
W
°C
–55 ~ +150
2000
2.0
°C
Vrms
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 300V, VGS = 0V
Gate-source threshold voltage
Drain-source on-state resistance
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
Thermal resistance
Reverse recovery time
IS = 20A, dis/dt = –100A/µs
Unit
Min.
Typ.
Max.
300
±30
—
—
—
—
V
V
—
—
2
—
—
—
—
3
0.25
2.5
±10
1
4
0.33
3.3
µA
mA
V
Ω
V
8.5
—
—
—
13.0
1400
280
55
—
—
—
—
S
pF
pF
pF
—
—
—
—
25
50
150
65
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
—
—
3.13
150
°C/W
ns
PERFORMANCE CURVES
40
30
20
10
0
MAXIMUM SAFE OPERATING AREA
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
0
50
100
150
CASE TEMPERATURE TC (°C)
200
102
7
5
3
2
tw=10µs
101
7
5
3
2
1ms
100
7
5
3
2
100µs
10ms
TC = 25°C
Single Pulse
DC
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
TC = 25°C
Pulse Test
VGS = 20V
10V
40
OUTPUT CHARACTERISTICS
(TYPICAL)
PD =
40W VGS=20V 10V
20
6V
TC = 25°C
Pulse Test
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
50
OUTPUT CHARACTERISTICS
(TYPICAL)
PD = 40W
7V
30
6V
20
10
0
5V
0
10
20
30
40
5V
4
4.5V
0
4
8
12
16
20
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
16
ID = 40A
12
8
20A
4
10A
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
8
DRAIN-SOURCE VOLTAGE VDS (V)
VGS = 10V
0.4
20V
0.3
0.2
0.1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7
5
32
FORWARD TRANSFER
ADMITTANCE yfs (S)
TC = 25°C
VDS = 50V
Pulse Test
24
16
8
0
TC = 25°C
Pulse Test
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
40
DRAIN CURRENT ID (A)
12
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
0
5.5V
0
50
20
0
16
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
VDS = 10V
Pulse Test
3
2
TC = 25°C
101
7
5
75°C
3
2
100 0
10
125°C
2 3
5 7 101
2 3
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
Coss
102
7
5
Crss
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
3
2
td(off)
102
7
5
tf
tr
3
2
td(on)
5 7 101
2 3
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT IS (A)
16
VDS = 50V
100V
12
200V
8
4
0
101
7
5
5 7 102
2 3
DRAIN-SOURCE VOLTAGE VDS (V)
Tch = 25°C
ID = 20A
20
40
60
80
VGS = 0V
Pulse Test
TC = 125°C
32
25°C
24
75°C
16
8
0
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
Tch = 25°C
VDD = 150V
VGS = 10V
RGEN = RGS = 25Ω
101
100
20
0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
Ciss
103
7
5
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
SWITCHING TIME (ns)
5
0
50
100
150
200
250
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
3
2
Irr
101
7
5
101
2 3
5 7 102
0
Tch = 25°C 10
Tch = 150°C 7
5
2 3
5 7 103
SOURCE CURRENT dis/dt (–A/µs)
3
2
3
2
102
7
5
101
7
5
trr
Irr
3
2
101 0
10
2 3
5 7 101
3
Tch = 25°C 2
Tch = 150°C
100
2 3
5 7 102
SOURCE CURRENT IS (A)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
5
5
IS = 20A
VGS = 0V
3
3
VDD = 150V 2
2
trr
101
102
7
7
5
5
3
2
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
102
103
dis/dt = –100A
7
7
VGS = 0V
5
5
VDD = 150V
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
1.4
REVERSE RECOVERY CURRENT Irr (A)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
REVERSE RECOVERY TIME trr (ns)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
HIGH-SPEED SWITCHING USE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
D=1
3
2 0.5
100
7
5
3
2
10–1
7
5
3
2
0.2
0.1
PDM
0.05
0.02
0.01
tw
T
Single Pulse
D= tw
T
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999