MITSUBISHI Nch POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS ................................................................................ 300V ¡rDS (ON) (MAX) .............................................................. 0.33Ω ¡ID ......................................................................................... 20A ¡Viso ................................................................................ 2000V ¡Integrated Fast Recovery Diode (MAX.) ........150ns 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Conditions Drain-source voltage VGS = 0V Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight AC for 1minute, Terminal to case Typical value Ratings 300 ±30 20 60 Unit V V A A 20 60 40 –55 ~ +150 A A W °C –55 ~ +150 2000 2.0 °C Vrms g Feb.1999 MITSUBISHI Nch POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 300V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω IS = 10A, VGS = 0V Channel to case Thermal resistance Reverse recovery time IS = 20A, dis/dt = –100A/µs Unit Min. Typ. Max. 300 ±30 — — — — V V — — 2 — — — — 3 0.25 2.5 ±10 1 4 0.33 3.3 µA mA V Ω V 8.5 — — — 13.0 1400 280 55 — — — — S pF pF pF — — — — 25 50 150 65 — — — — ns ns ns ns — 1.5 2.0 V — — — — 3.13 150 °C/W ns PERFORMANCE CURVES 40 30 20 10 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 CASE TEMPERATURE TC (°C) 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 2 100µs 10ms TC = 25°C Single Pulse DC 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE TC = 25°C Pulse Test VGS = 20V 10V 40 OUTPUT CHARACTERISTICS (TYPICAL) PD = 40W VGS=20V 10V 20 6V TC = 25°C Pulse Test DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 50 OUTPUT CHARACTERISTICS (TYPICAL) PD = 40W 7V 30 6V 20 10 0 5V 0 10 20 30 40 5V 4 4.5V 0 4 8 12 16 20 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 16 ID = 40A 12 8 20A 4 10A 0 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 8 DRAIN-SOURCE VOLTAGE VDS (V) VGS = 10V 0.4 20V 0.3 0.2 0.1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 32 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25°C VDS = 50V Pulse Test 24 16 8 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 DRAIN CURRENT ID (A) 12 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 5.5V 0 50 20 0 16 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) VDS = 10V Pulse Test 3 2 TC = 25°C 101 7 5 75°C 3 2 100 0 10 125°C 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) Coss 102 7 5 Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 3 2 td(off) 102 7 5 tf tr 3 2 td(on) 5 7 101 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) 16 VDS = 50V 100V 12 200V 8 4 0 101 7 5 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25°C ID = 20A 20 40 60 80 VGS = 0V Pulse Test TC = 125°C 32 25°C 24 75°C 16 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 25Ω 101 100 20 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) Ciss 103 7 5 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 SWITCHING TIME (ns) 5 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK20KM-6 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) 3 2 Irr 101 7 5 101 2 3 5 7 102 0 Tch = 25°C 10 Tch = 150°C 7 5 2 3 5 7 103 SOURCE CURRENT dis/dt (–A/µs) 3 2 3 2 102 7 5 101 7 5 trr Irr 3 2 101 0 10 2 3 5 7 101 3 Tch = 25°C 2 Tch = 150°C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 20A VGS = 0V 3 3 VDD = 150V 2 2 trr 101 102 7 7 5 5 3 2 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A 7 7 VGS = 0V 5 5 VDD = 150V REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 1.4 REVERSE RECOVERY CURRENT Irr (A) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10–1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999