CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: HD DIP CASE • Low Leakage Current (100nA TYP @ VRRM) • Low Forward Voltage Drop Schottky Diodes • High 1.0A Current Rating MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage SYMBOL 100 V 100 V VR(RMS) IO 71 V 1.0 A IFSM PD 20 A 1.2 W -50 to +125 °C DC Blocking Voltage RMS Reverse Voltage Average Forward Current UNITS VRRM VR Peak Forward Surge Current Power Dissipation Operating Junction Temperature TJ Tstg ΘJA Storage Temperature Thermal Resistance -50 to +150 °C 85 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR VR=100V VR=100V, TA=100°C BVR VF IR=150µA IF=500mA VF CJ IF=1.0A VR=4.0V, f=1.0MHz MIN TYP MAX 0.1 10 µA 20 mA 650 700 mV 700 750 mV 100 UNITS V 230 pF R3 (4-January 2010) CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH110 R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m