CENTRAL CBRHDSH1-100

CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
FEATURES:
HD DIP CASE
• Low Leakage Current (100nA TYP @ VRRM)
• Low Forward Voltage Drop Schottky Diodes
• High 1.0A Current Rating
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
SYMBOL
100
V
100
V
VR(RMS)
IO
71
V
1.0
A
IFSM
PD
20
A
1.2
W
-50 to +125
°C
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
UNITS
VRRM
VR
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
TJ
Tstg
ΘJA
Storage Temperature
Thermal Resistance
-50 to +150
°C
85
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IR
IR
VR=100V
VR=100V, TA=100°C
BVR
VF
IR=150µA
IF=500mA
VF
CJ
IF=1.0A
VR=4.0V, f=1.0MHz
MIN
TYP
MAX
0.1
10
µA
20
mA
650
700
mV
700
750
mV
100
UNITS
V
230
pF
R3 (4-January 2010)
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH110
R3 (4-January 2010)
w w w. c e n t r a l s e m i . c o m