CMKD6263DO SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6263DO contains two (2) galvanically isolated, high voltage, low VF Silicon Schottky diodes with an opposing Anode/ Cathode configuration, epoxy molded in a SOT-363 surface mount package. This ULTRAmini™ device has been designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 63D SOT-363 CASE FEATURES: • Dual Opposing (DO) Schottky Diodes • High Voltage (70V) MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance • Low Forward Voltage • Galvanically Isolated SYMBOL UNITS VRRM IF 70 V 15 mA IFSM PD 50 mA 250 mW -65 to +150 °C 500 °C/W TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V BVR IR=10μA VF IF=1.0mA CT trr UNITS 98 200 nA 395 410 mV VR=0, f=1.0MHz 2.0 pF IR=IF=10mA, Irr=1.0mA, RL=100Ω 5.0 ns 70 V R3 (13-January 2010) CMKD6263DO SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: 63D R3 (13-January 2010) w w w. c e n t r a l s e m i . c o m