CBRHDSH1-200 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-200 is a full wave bridge rectifier in a durable surface mount epoxy molded case, designed for high voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH120 HD DIP CASE APPLICATIONS: • Input rectification for LED lighting • Power over ethernet (PoE) peripherals • General purpose full wave rectification FEATURES: • Low forward voltage (0.76V TYP @ 1.0A) • Low leakage current (0.2μA TYP @ 200V) • High current rating: 1.0A • High voltage rating: 200V MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current SYMBOL VRRM VR VR(RMS) IO Peak Forward Surge Current IFSM PD Power Dissipation Operating Junction Temperature TJ Tstg ΘJA Storage Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=200V 0.2 IR VR=200V, TA=100°C BVR VF IR=100μA IF=1.0A 200 UNITS V 200 200 V 140 V 1.0 A 20 A 1.2 W -50 to +125 °C -50 to +150 °C 85 °C/W MAX 50 UNITS μA 20 mA 900 mV 220 760 V R1 (5-January 2012) CBRHDSH1-200 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH120 R1 (5-January 2012) w w w. c e n t r a l s e m i . c o m