CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VR 75 V VRRM IF 100 V 250 mA IFSM IFSM 4.0 A 1.0 A PD TJ, Tstg 250 mW -65 to +150 °C ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=75V BVR IR=100μA VF UNITS 500 pA IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz 2.0 pF trr IR=IF=10mA, RL=100Ω Rec. to 1.0mA 3.0 μs 100 V R2 (18-January 2010) CMLD6001DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: C60 R2 (18-January 2010) w w w. c e n t r a l s e m i . c o m