CMFSH-3i SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is designed fast switching applications requiring a low forward voltage drop. MARKING CODE: C3I SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VRRM IF 30 V 100 mA IFRM IFSM 200 mA 750 mA PD TJ, Tstg ΘJA 350 mW -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR UNITS BVR VR=25V VR=25V, TA=100°C IR=100μA VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.40 0.45 V VF IF=100mA 0.74 1.00 CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω IR 90 500 nA 25 100 μA 30 V V pF 5.0 ns R5 (13-August 2010) CMFSH-3i SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONIGURATION LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D2 4) Anode D1 MARKING CODE: C3I R5 (13-August 2010) w w w. c e n t r a l s e m i . c o m