Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. FEATURES: Top View • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package • Power Dissipation 100mW • Low Package Profile, 0.4mm • Low rDS(on) Bottom View SOT-883L CASE MARKING CODE: CEDM7001E: APPLICATIONS: E • Battery Powered Portable Equipment • Load/Power Switches • Power Supply Converter Circuits MAXIMUM RATINGS (TA=25°C) SYMBOL VDS VGS ID ID PD Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature TJ, Tstg P E R I L UNITS V V mA mA mW -65 to +150 °C Y R A N I M ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF VGS=10V, VDS=0V IGSSR VGS=10V, VDS=0V IDSS VDS=20V, VGS=0V BVDSS VGS=0V, ID=100µA 20 VGS(th) VDS=VGS, ID=250µA 0.6 rDS(ON) VGS=4.0V, ID=100mA Yfs VDS =10V, ID=100mA 100 Crss VDS=3.0V, VGS=0, f=1.0MHz Ciss VDS=3.0V, VGS=0, f=1.0MHz Coss VDS=3.0V, VGS=0, f=1.0MHz ton VDD=3.0V, VGS=2.5V, ID=10mA toff VDD=3.0V, VGS=2.5V, ID=10mA 20 10 100 200 100 TYP 1.0 MAX 1.0 1.0 1.0 0.9 2.0 TBD TBD TBD TBD TBD UNITS µA µA µA V V Ω mS pF pF pF ns ns R1 (16-March 2007) Central TM Semiconductor Corp. RY A CEDM7001E N I IM P L RE SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN R1 (16-March 2007)