CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR SOT-953 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNT3904E and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini™ SOT-953 package, these components provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMNT3904E: CL CMNT3906E: CM FEATURES APPLICATIONS • • • • • • • • Very Small Package Size Low Package Profile, 0.5mm 200mA Collector Current Low VCE(SAT) (0.1V Typ @ 50mA) • Small, FEMTOmini™ 1 x 0.8mm, SOT-953 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage Collector-Emitter Voltage ♦ Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance DC / DC Converters Voltage Clamping Protection Circuits Battery powered equipment including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL UNITS VCBO VCEO 60 40 V VEBO IC 6.0 V 200 mA PD TJ, Tstg 250 -65 to +150 mW °C ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V ♦ BVCBO IC=10µA 60 115 BVCEO IC=1.0mA 40 60 ♦ BVEBO IE=10µA 6.0 7.5 ♦ VCE(SAT) IC=10mA, IB=1.0mA .057 ♦ VCE(SAT) IC=50mA, IB=5.0mA 0.1 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 VBE(SAT) ♦ hFE ♦ hFE IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA 90 100 0.85 240 235 PNP TYP 90 55 7.9 .05 0.1 0.75 0.85 130 150 V MAX 50 0.1 0.2 UNITS nA V V V V V 0.85 0.95 V V ♦ Enhanced Specification R2 (25-January 2010) CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS MIN hFE VCE=1.0V, IC=10mA 100 ♦ hFE VCE=1.0V, IC=50mA 70 hFE VCE=1.0V, IC=100mA 30 fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 NF VCE=5.0V, IC=100μA, RS =1.0kΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA NPN TYP 215 110 50 PNP TYP 150 120 55 MAX 300 4.0 8.0 12 10 400 60 4.0 35 35 200 50 UNITS MHz pF pF kΩ X10-4 μS dB ns ns ns ns ♦ Enhanced Specification SOT-953 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Collector 3) Collector 4) Emitter 5) Base CMNT3904E MARKING CODE: CL CMNT3906E MARKING CODE: CM R2 (25-January 2010) w w w. c e n t r a l s e m i . c o m