CENTRAL CMPT3820

CMPT3820
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3820 is
a very low VCE(SAT) NPN Transistor, designed for
applications where size and efficiency are prime
requirements. Packaged in an industry standard
SOT-23, this device brings updated electrical
specifications and characteristics suitable for the
most demanding designs.
MARKING CODE: 38C
SOT-23 CASE
APPLICATIONS:
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Device is Halogen Free by design
• High Current (IC=1.0A)
• VCE(SAT)=0.28V MAX @ IC=1.0A
• SOT-23 surface mount package
• Complementary PNP device CMPT7820
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
80
60
5.0
1.0
2.0
300
350
-65 to +150
357
MAX
100
100
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
0.115
0.15
0.28
1.1
0.9
UNITS
nA
nA
V
V
V
V
V
V
V
V
10
MHz
pF
R1 (1-February 2010)
CMPT3820
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: 38C
R1 (1-February 2010)
w w w. c e n t r a l s e m i . c o m