Y RCMPD7006 A IN IM EL Central CMPD7006A CMPD7006C CMPD7006S PR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD7006, CMPD7006A, CMPD7006C and CMPD7006S are silicon switching diodes with various diode configurations, manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-23 surface mount case. These devices are designed for applications requiring high voltage switching diodes. SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE The following configurations are available: CMPD7006 CMPD7006A CMPD7006C CMPD7006S SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING MAXIMUM RATINGS PER DIODE: (TA=25°C) Peak Repetitive Reverse Voltage LI Peak Repetitive Forward Current E R Forward Surge Current, tp=1.0 µs Forward Surge Current, tp=1.0 s P Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR C7006 C706A C706C C706S Y R A 600 UNITS V 600 V 100 mA 300 mA IFSM 4.0 A IFSM 1.0 A PD 350 mW TJ, Tstg -65 to +150 °C ΘJA 357 °C/W N I M Continuous Reverse Voltage Continous Forward Current CODE: CODE: CODE: CODE: VRRM IF IFRM ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=480V 7.0 IR VR=480V, TA=150°C BVR IR=1.0µA 600 675 VF IF=10mA 0.88 VF IF=50mA 1.04 VF IF=100mA 1.16 CT VR=0V, f=1.0 MHz trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MAX 100 100 1.0 1.2 1.4 5.0 500 UNITS nA µA V V V V pF ns R0 (8-December 2003) Central TM IM RY A INCMPD7006 L RE P Semiconductor Corp. CMPD7006A CMPD7006C CMPD7006S SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: SEE PREVIOUS PAGE 2 1 2 1 D1 3 D2 3 2 1 D1 D2 3 2 1 D1 D2 3 LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: CMPD7006 1) Anode 2) No Connection 3) Cathode CMPD7006A 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 CMPD7006C 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 CMPD7006S 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R0 (8-December 2003)