CENTRAL CMPDM8002A

CMPDM8002A
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM8002A
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications.
MARKING CODE: C802A
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON)
• Low VDS(ON)
• Low threshold voltage
• Fast switching
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
ΘJA
SOT-23 CASE
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=50V, VGS=0
IDSS
VDS=50V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
BVDSS
VGS=0, ID=10μA
VGS(th)
VDS=VGS, ID=250μA
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
otherwise noted)
MIN
500
50
1.0
50
50
20
280
280
1.5
1.5
350
-65 to +150
357
MAX
100
1.0
500
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
R1 (27-January 2010)
CMPDM8002A
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
ELECTRICAL
SYMBOL
gFS
Crss
Ciss
Coss
ton, toff
CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
MAX
VDS =10V, ID=200mA
200
VDS=25V, VGS=0, f=1.0MHz
7.0
VDS=25V, VGS=0, f=1.0MHz
70
VDS=25V, VGS=0, f=1.0MHz
15
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
20
UNITS
mS
pF
pF
pF
ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: C802A
R1 (27-January 2010)
w w w. c e n t r a l s e m i . c o m