CMPDM7002AHC SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AHC is a High Current version of the 2N7002A Enhancementmode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702H SOT-23 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Low rDS(ON): 0.22Ω MAX @ VGS=10V • Industry Standard SOT-23 Surface Mount Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IDM PD TJ, Tstg ΘJA • Device is Halogen Free by design ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 BVDSS VGS=0, ID=100μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=500mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=5.0V, ID=500mA Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A Qgs VDS=10V, VGS=4.5V, ID=1.0A Qgd VDS=10V, VGS=4.5V, ID=1.0A Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz ton VDD=30V, VGS=4.5V, ID=1.0A RG=6.0Ω, RL=30Ω toff VDD=30V, VGS=4.5V, ID=1.0A RG=6.0Ω, RL=30Ω UNITS V V V A A mW °C °C/W 60 60 20 1.0 5.0 350 -65 to +150 357 otherwise noted) MIN TYP 63 1.2 0.15 0.20 2.3 1.0 0.7 MAX 10 500 25 240 50 UNITS μA nA V V V Ω Ω nC nC nC pF pF pF 35 ns 50 ns 2.3 0.9 0.22 0.30 R2 (2-August 2011) CMPDM7002AHC SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 702H R2 (2-August 2011) w w w. c e n t r a l s e m i . c o m