PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 95,400 PRINCIPAL DEVICE TYPES CEDM7004 R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP394R Typical Electrical Characteristics R1 (22-March 2010) w w w. c e n t r a l s e m i . c o m