PROCESS CPD104R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 80,698 PRINCIPAL DEVICE TYPES CFSH2-3L R0 (1-February 2011) w w w. c e n t r a l s e m i . c o m PROCESS CPD104R Typical Electrical Characteristics R0 (1-February 2011) w w w. c e n t r a l s e m i . c o m